Photo-Absorption and photochemical decomposition of copper and alkaline-earth ß-diketonates as source gases of high-Tc superconducting films

For low-temperature deposition of oxide films relating to Bi-Sr-Ca-Cu-O superconductors, photo-absorption and -decomposition properties were examined with respect to copper and alkaline-earth ß-diketonates. It was confirmed that all ß-diketonates examined were promising as source materials for photochemical vapour deposition (photo-CVD) using a low-pressure mercury lamp, in view of their large light absorption coefficients at wavelength 254 nm. The light irradiation was effective for the formation of highly crystalline oxide films at temperatures below 600 °C. By combining two sources, Ca₂CuO₃ and SrCuO₂ films were prepared. Photo-CVD of c-axis oriented Bi₂Sr₂CuO_x film was achieved by the irradiation of ternary sources of Bi(C₆H₅)₃ and strontium and copper ß-diketonates at 500 °C.     

Altered protein synthesis in rat kidney cells exposed to semiconductor materials

It is thought that the extensive industrial use of arsenic, gallium and indium, which have applications as the materials for III–V semiconductors, will increase human exposure to these compounds in the near future. We have undertaken the development of new biological indicators for assessing exposure to these elements. Element-specific alterations in protein synthesis patterns were expected to occur following exposure to arsenic compounds. We examined alterations in protein synthesis in primary cultures of rat kidney proximal tubule epithelial cells by sodium arsenite, gallium chloride and indium chloride, utilizing two-dimensional gel electrophoresis. After incubation with the chemicals for 20 h, newly synthesized proteins were labeled with [³⁵S]methionine. A protein with a molecular weight (M_r) of 30 000 was markedly induced on exposure to 10 μM arsenite or 300 μM gallium chloride, and synthesis of proteins with M_r values of 85 000, 71 000, 65 000, 51 000, 38 000 and 28 000 were also increased by exposure to arsenite and gallium chloride. No significant changes were observed upon exposure to indium. Some of these increased proteins could be heat-shock proteins.     

Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.     

盲孔法测量复合材料残余应力释放应变矩阵的有限元分析

对盲孔法测量正交各向异性复合材料残余应力释放应变矩阵进行有限元分析.以碳/环氧正交各向异性材料板为基础,对于不同孔深的盲孔进行有限元计算,得出与其相对应的释放应变矩阵,并分析孔深对释放应变矩阵的影响.为实际工程中残余应力的测试奠定了基础.     

逆境生物学研究如何为发展我国旱地农业服务

根据我国半干旱地区农业的特点，提出了该地区农业发展中存在的问题，并给出了解决的途径及建议。     

填埋场淋滤液水位对边坡防渗膜拉应力的影响

上、下界面的不平衡摩擦力将导致填埋场边坡上的土工防渗膜承受拉应力．垃圾填埋体内淋滤液水位的高低将对防渗膜上、下界面摩擦力的大小产生影响，进而影响防渗膜承受的拉应力，文中利用作者推导的一种确定防渗膜拉应力大小的新方法对其进行了计算．对某填埋场实例的计算结果表明，淋滤液水位的存在将改善防渗膜的工作性态．     

负载型金属氧化物常温精脱硫剂的制备与表征

以γ—Al2O3为载体，用浸渍沉淀法制备复合金属氧化物脱硫剂，添加竞争吸附剂得到高分散、均匀型金属氧化物精脱硫剂。常温、缺氧条件下精脱H2S穿透硫容可达16．8％．采用EP、TEM技术分析了金属氧化物活性组分的均匀分布及脱硫前后的脱硫剂微表面的变化。     

复合桩基中承台内区土阻力群桩效应系数的有限元分析

采用有限元方法，对复合桩基中承台内区土阻力群桩效应系数进行了分析，并编制了相应的有限元程序。应用该程序讨论了桩距、桩数、桩长、土类等对承台内区土阻力群桩效应系数的影响。     

A rate-dependent algebraic stress model for turbulence

Based on the stress transport model, a rate-dependent algebraic expression for the Reynolds stress tensor is developed. It is shown that the new model includes the normal stress effects and exhibits viscoelastic behavior. Furthermore, it is compatible with recently developed improved models of turbulence. The model is also consistent with the limiting behavior of turbulence in the inertial sublayer and is capable of predicting secondary flows in noncircular ducts. The TEACH code is modified according to the requirements of the rate-dependent model and is used to predict turbulent flow fields in a channel and behind a backward-facing step. The predicted results are compared with the available experimental data and those obtained from the standard k-ε and algebraic stress models. It is shown that the predictions of the new model are in better agreements with the experimental data.     

金属电极-原子线-金属电极系统的第一性原理研究

桥接到金属电极上的原子线，在纳米电子学中被视作一种分子联结，是当前低维系统电子输运研究中的热点．本文对金属电极-原子线-金属电极系统进行了简化，合理地构造出简单的类似分子的模型，利用传统的量子化学从头计算方法，计算了金属电极-原子线-金属电极的能级结构、电极与原子线间的轨道能量、电行转移以及布居分析．计算结果表明：原子线在连接不同结构类型的电极后电荷转移明显不同，体现了不同电极与原子线的相互作用，这些不同于以前的理论结果．