High-resolution solid-state MAS 73Ge NMR spectra of some organogermanes

High-resolution solid-state magic angle spinning (73)Ge NMR spectra of some organogermanium compounds were measured. Most tetrasubstituted germanes with identical substituents exhibited signals except for one case. Tetrasubstituted germanes with two kinds of different but somewhat similar substituents exhibited broad peaks. Trisubstituted germanes failed to show signals, indicating the importance of symmetry around germanium.     

市场化年代的格非先锋历史小说

格非注重历史在小说世界中的想象性实现,他的小说大都可以纳入先锋历史小说的范畴。格非在悲剧中反思历史,在虚构中呈现真实,在隐喻中超越现实,试图展示生命深处的人性本质。格非在历史中探求人性升华的可能,在苦难中寄寓精神救赎的希望,这种对历史和生命的终极关怀,启迪着我们去追寻遥远精神家园。格非先锋历史小说所体现的批判精神和诗性品质是文学在市场化年代应该坚守的立场。     

"雪堂雅集"与元初馆阁诗人文学活动考

论者一般认为,元代馆阁诗人群体是在“元四家”时期才形成的。但据现存“雪堂雅集”等资料考证,元世祖至元年间,一个以馆阁文人为主体的诗人群体已经形成,并开始活跃在元代诗坛之上,支撑着元初诗坛局面,维系着诗坛命脉,引领着元代诗坛的走向,延续着元代诗坛以馆阁文人为主流的发展趋向,对有元一代馆阁诗人占据诗坛主体地位具有重要的奠基之功。     

湘黔地区埃迪卡拉纪-寒武纪之交硅质岩的成因探讨——来自稀土元素和Ge/Si比值的证据

对埃迪卡拉纪?寒武纪之交的贵州铜仁坝黄剖面留茶坡组层状硅质岩和湖南张家界柑子坪剖面留茶坡组穹隆状硅质岩的主量、微量元素和稀土元素以及Ge/Si特征进行分析, 探讨两种硅质岩的成因。层状硅质岩的SiO₂含量为96.06%~99.61%, 穹窿状硅质岩的SiO₂含量为98.62%~99.56%, 平均值为99.13%; 其他元素含量很低, 两者均为纯硅质岩。坝黄层状硅质岩的ΣREE为20.14~248.56 μg/g (平均100.62 μg/g), Eu/Eu*值为0.90~1.10 (平均1.06), 无明显异常, Ge/Si值为0.13~0.98 μmol/mol (平均0.50 μmol/mol), Al₂O₃与ΣREE明显正相关, 表明硅质岩成分明显受陆源输入的控制。柑子坪穹隆状硅质岩的ΣREE值低, 为3.75~7.24 μg/g (平均5.73 μg/g), Ce/Ce*值为0.46~0.66 (平均0.57), 具负异常, Eu/Eu*值为2.28~11.07 (平均4.60), 具明显正异常, Ge/Si值为1.09~1.43 μmol/mol (平均1.25 μmol/mol), Al₂O₃与ΣREE的相关性较差, 表明硅质岩为海底热液成因。Al₂O₃与Ge/Si的相关性强弱也可以反映硅质岩的来源。结合古地理环境, 推断层状硅质岩可能形成于盆地内部, 而穹隆状硅质岩可能发育在台缘同生断裂处, 因海底热液喷流而形成。以1 μmol/mol 作为Ge/Si的临界值可以为示踪硅质岩的物质来源提供新的思路。     

Raman spectroscopy of CaM2+Ge2O6 (M2+ = Mg,Mn, Fe,Co, Ni,Zn) clinopyroxenes

The Raman spectra of Ge‐clinopyroxenes CaM²⁺Ge₂O₆ (M²⁺ = Mg, Mn, Fe, Co, Ni, Zn), general formula M2M1T₂O₆, are reported for the first time. Their spectral features are discussed in comparison with corresponding Si‐pyroxenes. The vibrational wavenumbers of germanates may be roughly obtained by a scale factor of about ~0.8 by those of the corresponding silicates, due to the Ge‐Si mass difference. The main peaks in the germanate Raman spectra at ~850 and ~540 cm⁻¹ may be related to Ge‐O tetrahedral stretching and chain bending, respectively; minor peaks between 200 and 400 cm⁻¹ are ascribed to bending and stretching of the non‐tetrahedral cations. Within Ge‐pyroxenes, possible correlations between crystallographic parameters and the vibrational wavenumbers are investigated. The main stretching mode at ~850 cm⁻¹ shows wavenumber changes with M²⁺ substitutions, but no simple correlation can be found with M²⁺ cation mass or size. On the other hand, the chain bending wavenumber linearly decreases with increasing ionic radius of the M²⁺ cation: the expansion of the M1 polyhedron reduces the chain kinking angle and the Ge‐Ge distances correspondingly increase. Copyright © 2015 John Wiley & Sons, Ltd.     

Reaction Behaviors of S-, O-, and N-containing Aliphatic Molecules with a Propyl Moiety on Ge(100) Surface

The reaction pathways of 1-propanethiol, 1-propanol, and propylamine molecules, containing a propyl moiety, on a Ge(100) surface were investigated using high-resolution photoemission spectroscopy (HRPES) experiments and density functional theory (DFT) calculations. Upon analysis of the HRPES data, the adsorption of 1-propanethiol and 1-propanol was found to occur through a dissociation reaction, whereas that of propylamine took place via N dative bonding at room temperature. On the basis of our DFT results, adsorption geometries and transition states for each of these molecules on the Ge(100) surface were confirmed. Systematic studies of S-, O-, and N-containing molecules, composed of an identical propyl moiety, on the Ge(100) surface provide insight into the adsorption mechanism of aliphatic molecules containing alkyl chains on the Ge(100) surface.     

LaTiO高k栅介质Ge MOS电容电特性及Ti含量优化

采用共反应溅射法将Ti添加到La_2O_3中,制备了LaTiO/Ge金属-氧化物-半导体电容,并就Ti含量对器件电特性的影响进行了仔细研究.由于Ti-基氧化物具有极高的介电常数,LaTiO栅介质能够获得高k值;然而由于界面/近界面缺陷随着Ti含量的升高而增加,添加Ti使界面质量恶化,进而使栅极漏电流增大、器件可靠性降低.因此,为了在器件电特性之间实现协调,对Ti含量进行优化显得尤为重要.就所研究的Ti/La_2O_3比率而言,18.4%的Ti/La_2O_3比率最合适.该比率导致器件呈现出高k值(22.7)、低D_(it)(5.5×10~(11)eV~(-1)·cm~(-2))、可接受的J_g(V_g=1V,J_g=7.1×10~(-3)A·cm~(-2))和良好的器件可靠性.     

Spectral probing of carrier traps in Si–Ge alloy nanocrystals

Photogenerated carriers in Si–Ge alloy nanocrystals (NCs) prepared by co‐sputtering method were investigated by mean of transient induced absorption. The carrier relaxation features multiple components, with three decay life times of τ ≈ 600 fs, 12 ps, and 15 ns, established for Si_0.2Ge_0.8 alloy NCs of a mean crystal size of 9 nm and standard deviation of 3 nm. Deep carrier traps, identified at the boundary between the NCs and the SiO₂ host with the ionization energy of about 1 eV, are characterized by a long‐range Coulombic potential. These are responsible for rapid depletion of free carrier population within a few picoseconds after the excitation, which explains the low emissivity of the investigated materials, and also sheds light on the generally low luminescence of Si/Ge and Ge NCs. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Trapping neutral fermions with a PT-symmetric trigonometric potential in the presence of position-dependent mass

The relativistic problem of neutral fermions subject to PT-symmetric trigonometric potential (∼iαtanαx)$(\sim \mathrm{i}\alpha \tan \alpha x)$ in 1+1$1+1$ dimensions is investigated. By using the basic concepts of the supersymmetric quantum mechanics formalism and the functional analysis method, we solve exactly the position-dependent effective mass Dirac equation with the vector coupling scheme and obtain the bound state solutions in closed form. The behavior of the energy spectra is discussed in detail.