"雪堂雅集"与元初馆阁诗人文学活动考

论者一般认为,元代馆阁诗人群体是在“元四家”时期才形成的。但据现存“雪堂雅集”等资料考证,元世祖至元年间,一个以馆阁文人为主体的诗人群体已经形成,并开始活跃在元代诗坛之上,支撑着元初诗坛局面,维系着诗坛命脉,引领着元代诗坛的走向,延续着元代诗坛以馆阁文人为主流的发展趋向,对有元一代馆阁诗人占据诗坛主体地位具有重要的奠基之功。     

湘黔地区埃迪卡拉纪-寒武纪之交硅质岩的成因探讨——来自稀土元素和Ge/Si比值的证据

对埃迪卡拉纪?寒武纪之交的贵州铜仁坝黄剖面留茶坡组层状硅质岩和湖南张家界柑子坪剖面留茶坡组穹隆状硅质岩的主量、微量元素和稀土元素以及Ge/Si特征进行分析, 探讨两种硅质岩的成因。层状硅质岩的SiO₂含量为96.06%~99.61%, 穹窿状硅质岩的SiO₂含量为98.62%~99.56%, 平均值为99.13%; 其他元素含量很低, 两者均为纯硅质岩。坝黄层状硅质岩的ΣREE为20.14~248.56 μg/g (平均100.62 μg/g), Eu/Eu*值为0.90~1.10 (平均1.06), 无明显异常, Ge/Si值为0.13~0.98 μmol/mol (平均0.50 μmol/mol), Al₂O₃与ΣREE明显正相关, 表明硅质岩成分明显受陆源输入的控制。柑子坪穹隆状硅质岩的ΣREE值低, 为3.75~7.24 μg/g (平均5.73 μg/g), Ce/Ce*值为0.46~0.66 (平均0.57), 具负异常, Eu/Eu*值为2.28~11.07 (平均4.60), 具明显正异常, Ge/Si值为1.09~1.43 μmol/mol (平均1.25 μmol/mol), Al₂O₃与ΣREE的相关性较差, 表明硅质岩为海底热液成因。Al₂O₃与Ge/Si的相关性强弱也可以反映硅质岩的来源。结合古地理环境, 推断层状硅质岩可能形成于盆地内部, 而穹隆状硅质岩可能发育在台缘同生断裂处, 因海底热液喷流而形成。以1 μmol/mol 作为Ge/Si的临界值可以为示踪硅质岩的物质来源提供新的思路。     

四方晶系下钕离子的基态分裂

采用点电荷晶场模型,通过模拟四方晶系化合物NdCuAs2和Nd2Ge2In的磁化率倒数-温度曲线,得到了Nd3+的各级分裂能和相应波函数,并分析了晶场效应对化合物磁性质的影响.结果表明,Kramers离子Nd3+的十重简并基态4I9/2在晶场效应的作用下分裂为5个双态,计算结果与实验吻合得较好.     

Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as low as 4.23× 10^-5~Ωega \cdotcm² is achieved after annealing in N₂ at 800~°C for 3~min, which is much lower than that (>900~°C) in the typical SiC metallisation process. The sheet resistance R_sh of the implanted layers is 1.5~kΩega /\Box. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge⁺ ion implantations.     

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Strain-compensated Ge/Si_0.15Ge_0.85 multiple quantum wells were grown on an Si_0.1>Ge_0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n⁺-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.     

Reaction Behaviors of S-, O-, and N-containing Aliphatic Molecules with a Propyl Moiety on Ge(100) Surface

The reaction pathways of 1-propanethiol, 1-propanol, and propylamine molecules, containing a propyl moiety, on a Ge(100) surface were investigated using high-resolution photoemission spectroscopy (HRPES) experiments and density functional theory (DFT) calculations. Upon analysis of the HRPES data, the adsorption of 1-propanethiol and 1-propanol was found to occur through a dissociation reaction, whereas that of propylamine took place via N dative bonding at room temperature. On the basis of our DFT results, adsorption geometries and transition states for each of these molecules on the Ge(100) surface were confirmed. Systematic studies of S-, O-, and N-containing molecules, composed of an identical propyl moiety, on the Ge(100) surface provide insight into the adsorption mechanism of aliphatic molecules containing alkyl chains on the Ge(100) surface.     

Spectral probing of carrier traps in Si–Ge alloy nanocrystals

Photogenerated carriers in Si–Ge alloy nanocrystals (NCs) prepared by co‐sputtering method were investigated by mean of transient induced absorption. The carrier relaxation features multiple components, with three decay life times of τ ≈ 600 fs, 12 ps, and 15 ns, established for Si_0.2Ge_0.8 alloy NCs of a mean crystal size of 9 nm and standard deviation of 3 nm. Deep carrier traps, identified at the boundary between the NCs and the SiO₂ host with the ionization energy of about 1 eV, are characterized by a long‐range Coulombic potential. These are responsible for rapid depletion of free carrier population within a few picoseconds after the excitation, which explains the low emissivity of the investigated materials, and also sheds light on the generally low luminescence of Si/Ge and Ge NCs. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Trapping neutral fermions with a PT-symmetric trigonometric potential in the presence of position-dependent mass

The relativistic problem of neutral fermions subject to PT-symmetric trigonometric potential (∼iαtanαx)$(\sim \mathrm{i}\alpha \tan \alpha x)$ in 1+1$1+1$ dimensions is investigated. By using the basic concepts of the supersymmetric quantum mechanics formalism and the functional analysis method, we solve exactly the position-dependent effective mass Dirac equation with the vector coupling scheme and obtain the bound state solutions in closed form. The behavior of the energy spectra is discussed in detail.     

Influence of network structure on rumor propagation

Rumor propagation in complex networks is studied analytically and numerically by using the SIR model. Analytically, a mean-field theory is worked out by considering the influence of network topological structure and the unequal footings of neighbors of an infected node in propagating the rumor. It is found that the final infected density of population with degree k   is ρ(k)=1−exp(−αk)$\rho (k)=1-\exp (-\alpha k)$, where α is a parameter related to network structure. The number of the total final infected nodes depends on the network topological structure and will decrease when the structure changes from random to scale-free network. Numerical simulations confirm the theoretical predictions.     

基于Al6Ge2O13还原制备Ge纳米粒子及其光致发光性能研究

以3-三氯锗丙酸和硝酸铝为原料，通过共沉淀法合成了Al₆Ge₂O₁₃陶瓷粉体，并利用TG-DSC、FTIR、XRD等研究了其形成过程。采用选择还原技术对Al₆Ge₂O₁₃进行还原处理，还原产物观察到发光峰位于564、611、681、730和774 nm的室温光致发光现象。比较不同温度下还原的样品，发现550 ℃保温3 h还原制备的样品发光强度最强，通过XRD、XPS和Raman光谱研究表明样品在可见和近红外光区的发光是源于平均粒径为1.98 nm且未能形成完整晶格的Ge纳米粒子团簇。