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71.
72.
In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR–V curves, output voltages and I–V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR–V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. 相似文献
73.
74.
提出了一种无须进行电离积分的用于高压结终端模拟的边界元素法,分析了界面电荷对FP-JTE终端结构击穿电压的影响,结果表明击穿电压几乎与界面电荷浓度呈线性关系,场板可减弱界面电荷对击穿电压的影响。 相似文献
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76.
本文设计并研制了一种实用型三谱段太阳模拟器,其光谱匹配可同时调整3个谱段(300~700 nm,700~900 nm,900~1 700 nm)范围的能量,修正后可满足三结砷化镓太阳电池的测试使用要求。本文重点阐述了三谱段太阳模拟器滤光片的设计和氙灯光谱的修正及测试,介绍了太阳模拟器的光机结构。实验表明:三谱段太阳模拟器的光谱匹配满足三结砷化镓太阳电池各子电池的响应电流值。在有效辐照面150 mm×150 mm上,平均辐照度可以达到2个太阳常数(2 730 W/m2),辐照不均匀度达到±1.77%,辐照不稳定度达到±0.83%,为太阳电池自动分拣系统提供了可靠稳定的平台。 相似文献
77.
Takeshi Kitatani Masahiko Kondow Koji Nakahara M. C. Larson Kazuhisa Uomi 《Optical Review》1998,5(2):69-71
Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications. 相似文献
78.
The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article.The results show that the vertical NPN transistors exhibit more degradation at low dose rate,and that this degradation is attributed to the increase on base current.The oxide trapped positive charge near the SiO2-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results. 相似文献
79.
80.
Yue-Wei Yin Muralikrishna Raju Wei-Jin Hu Xiao-Jun Weng Ke Zou Jun Zhu Xiao-Guang Li Zhi-Dong Zhang Qi Li 《Frontiers of Physics》2012,7(4):380-385
Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La0.7Ca0.3MnO3 and La0.7Sr0.3MnO3 as the electrodes and ferroelectric (Ba, Sr)TiO3 as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures. 相似文献