全文获取类型
收费全文 | 656篇 |
免费 | 168篇 |
国内免费 | 33篇 |
专业分类
化学 | 43篇 |
晶体学 | 50篇 |
力学 | 1篇 |
综合类 | 2篇 |
数学 | 3篇 |
物理学 | 613篇 |
综合类 | 145篇 |
出版年
2024年 | 1篇 |
2023年 | 3篇 |
2022年 | 11篇 |
2021年 | 6篇 |
2020年 | 5篇 |
2019年 | 10篇 |
2018年 | 13篇 |
2017年 | 15篇 |
2016年 | 21篇 |
2015年 | 15篇 |
2014年 | 29篇 |
2013年 | 45篇 |
2012年 | 37篇 |
2011年 | 40篇 |
2010年 | 37篇 |
2009年 | 37篇 |
2008年 | 31篇 |
2007年 | 40篇 |
2006年 | 59篇 |
2005年 | 42篇 |
2004年 | 42篇 |
2003年 | 26篇 |
2002年 | 49篇 |
2001年 | 21篇 |
2000年 | 49篇 |
1999年 | 18篇 |
1998年 | 22篇 |
1997年 | 27篇 |
1996年 | 17篇 |
1995年 | 11篇 |
1994年 | 16篇 |
1993年 | 11篇 |
1992年 | 13篇 |
1991年 | 7篇 |
1990年 | 11篇 |
1989年 | 2篇 |
1988年 | 5篇 |
1987年 | 4篇 |
1986年 | 1篇 |
1985年 | 2篇 |
1983年 | 1篇 |
1981年 | 2篇 |
1980年 | 2篇 |
1974年 | 1篇 |
排序方式: 共有857条查询结果,搜索用时 46 毫秒
101.
Superlattices of cubic gallium nitride (GaN) and gallium arsenide (GaAs) were grown on GaAs(1 0 0) substrates using metalorganic vapor phase epitaxy (MOVPE) with dimethylhydrazine (DMHy) as nitrogen source. Structures grown at low temperatures with varying layer thicknesses were characterized using high resolution X-ray diffraction and atomic force microscopy. Several growth modes of GaAs on GaN were observed: step-edge, layer-by-layer 2D, and 3D island growth. A two-temperature growth process was found to yield good crystal quality and atomically flat surfaces. The results suggest that MOVPE-grown thin GaN layers may be applicable to novel GaAs heterostructure devices. 相似文献
102.
The GaAs material is a major semiconductor material, and it has high electron transfer rate and direct transition energy band structure. The devices and inte-grated circuits fabricated on the GaAs substrates have a lot of advantages such as high speed information processing. Small perturbations in the manufacturing of GaAs materi-als can lead to defects. The defects in the GaAs materials can degrade the performance of materials. A new method is presented in this paper for detecting the micro-defects in GaAs materials by using time resolved emissions. In this method, the micro-defects in GaAs materials are detected by making use of the photon emission features of micro- defects. The strength of the emitted photons from the micro-defects is increased by applying the electric current or the periodic pulse signals to GaAs materials. The single-photon detector is used to detect the photon emissions of the micro-defects. The time resolved photon emissions and single-photon detection are used to record and compare the amounts of the emitted photons that come from the given regions of the normal GaAs materials and the defective GaAs materials. A lot of experimental results show that the micro-defects in the GaAs materials can be detected by using the method proposed in this paper. 相似文献
103.
104.
Koich Akiyama Nobuyuki Tomita Yoshinori Nomura Toshiro Isu Hajime Ishihara Kikuo Cho 《Physica E: Low-dimensional Systems and Nanostructures》2000,7(3-4)
We demonstrate a remarkable thickness dependence of nonlinear optical response of exciton–polaritons in GaAs thin films by degenerate four-wave mixing (DFWM) at low temperature (T=5 K). High-quality samples of layer thickness from 80 to 200 nm were grown by molecular beam epitaxy. Confined mode of the exciton–polariton dominantly contributed to the reflection spectra, which were examined by the calculation using a transfer matrix method. The DFWM intensity at exciton resonance was enhanced at a particular thickness (110 nm). This thickness dependence is in good agreement with the nonlocal theory, which shows a remarkable size dependence of the internal field relevant to the confined mode of the exciton–polaritons. 相似文献
105.
在真空中解理后,用XPS测得了GaAs样品(110)断面能带弯曲的动态过程.两组重掺杂n型和p型GaAs样品的费米能级分别向禁带中间的方向移动了0.4eV和0.3eV.实验测得重掺杂n型和p型GaAs样品费米能级之差为1.3eV,它们的禁带宽度理论值为1.42eV,这说明结果是合理的.根据实验结果,对引起GaAs表面能带弯曲的可能原因进行了分析讨论.排除了本征表面态、真空中残留气体和X射线辐射等原因,认为解理过程在表面产生的缺陷和解理后表面晶格弛豫过程中产生的缺陷可能是导致能带弯曲的主要原因. 相似文献
106.
T. Shimada K. Hiruma M. Shirai M. Yazawa K. Haraguchi T. Sato M. Matsui T. Katsuyama 《Superlattices and Microstructures》1998,24(6):453-458
The self-organized, position-controlled and parallel growth of GaAs and InAs nanowhiskers is successfully demonstrated by using a metal–organic chemical vapour deposition method. The growth takes place preferentially along the 111 As direction with the aid of the catalytic effect of Au nanodroplets, and not along 111 Ga or In directions. The diameter and length of the whisker can be controlled artificially down to 10 nm and to over 1 μm, respectively. Doping and composition control of p- or n-type such as GaAs–InAs heterostructure formation are possible along the length direction of the whisker by changing the source gases. In order to control the growth position of the whisker, positioning of a Au nanodroplet is essential and realized by a lithographic method. By choosing the [111]B direction to the substrate surface and normal to the patterned side edges, and by positioning the Au nanodroplet on the side wall, the positioned planar nanowhisker growth and bridging are successfully demonstrated. The growth mechanism of the nanowhiskers is revealed by the scanning and transmission electron microscope observations. Nanometer-size Au-alloy droplets play an important role in the growth of the whiskers. The whisker growth process is governed by the vapor–liquid–solid growth mechanism. 相似文献
107.
108.
109.
110.
《Superlattices and Microstructures》2000,27(5-6)
A genetic algorithm approach is used to fit orbital interaction energies of sp3s* tight-binding models for the nine binary compound semiconductors consistent of Ga, Al, In and As, P, Sb at room temperature. The new parameters are optimized to reproduce the bandstructure relevant to carrier transport in the lowest conduction band and the highest three valence bands. The accuracy of the other bands is sacrificed for the better reproduction of the effective masses in the bands of interest. Relevant band edges are reproduced to within a few meV and the effective masses deviate from the experimental values typically by less than 10%. 相似文献