磁镜装置中ECR等离子体硬X射线强度观测

本文描述用硬X射线针孔成象法测量简单磁镜装置中ECR等离子体辐射特性的方法及其结果。这种非破坏性的成象法,直接显示了热电子等离子体的空间分布,一次放电可成一帧清晰的象,且由此可得出二维的等发射强度线。大量结果表明电子环是非轴对称的,并非为一个整环,而是在微波注入口的对面有一个缺口。当微波功率改变时,环也在改变。     

Tin(II) aminoalkoxides and heterobimetallic derivatives: the structures of Sn6(O)4(dmae)4, Sn6(O)4(OEt)4 and [Sn(dmae)2Cd(acac)2]2

Tin(II) methoxide reacts with N,N′‐dimethylaminoethanol (dmaeH) to yield Sn(dmae)₂ ( 1 ) along with small amounts of the hydrolysis product Sn₆(O)₄(dmae)₄ ( 2 ). The geometrically more regular iso‐structural cage Sn₆(O)₄(OEt)₄ ( 3 ) was obtained as the only tractable product isolated from reaction of 2 and Sb(OEt)₃, while 1 reacted with CdX₂ (X = acac, I) to afford Sn(dmae)₂Cd(acac)₂ ( 4 ) and Sn(dmae)₂CdI₂ ( 5 ). The X‐ray structures of 2, 3 and 4 are reported. Decomposition of 4 under aerosol‐assisted chemical vapour deposition conditions leads to amorphous tin oxide films with no detectable cadmium (i.e. ca < 2% cadmium), rather than a stoichiometric Sn:Cd oxide. Copyright © 2006 John Wiley & Sons, Ltd.     

6.4 GHz ECR ion source at VECC

The 6.4 GHz ECR ion source that was indigenously developed a few years ago has been operating continuously for injecting oxygen and neon beams to the cyclotron since 1997. VEC-ECR is a single stage high magnetic field ion source provided with a negatively biased electron repeller placed on the axis, near the injection mirror point. The supply of cold electrons and use of low mass mixing gas improve the stability of ECR plasma. Very recently, the effect of aluminum oxide coating on the copper plasma chamber wall has been studied. The plasma chamber wall was coated with aluminum by vacuum evaporation method and then exposed to oxygen gas to form aluminum oxide. It was noticed that the process substantially shifts the charge state distribution to the higher charge state with an enhancement of ion current by an order of magnitude. With the aluminized plasma chamber, the VEC-ECR can now produce 12 μA of O⁷⁺, 6.5 μA of Ar¹²⁺, 1.5 μA of Kr²⁰⁺ and 1.0 μA of Xe³¹⁺.     

ECR离子源六极永磁体的设计研究

分别从材料、结构、尺寸等方面全面地研究了Halbach结构六极永磁铁的设计方法.针对个别磁块可能存在的退磁问题给出了相应的解决方案.通过优化结构,使六极磁铁在离子源等离子体弧腔内壁产生的磁场达到最大.用POISSON,PERMAG,TOSCA等多个磁场模拟程序计算模拟了六极磁场的大小与分布,并给出了一些相应的曲线     

ECR放电中电子能量分布函数的确定

在ECR放电实验中，我们测量了简单镜中捕获的电子能量分布函数，通过测量双延迟势，可获得ECR放电中电子在磁镜装置镜喉区域的电子能量分布函数，利用光谱变分和朗缪尔探针可以确定电子分布函数的某些参数，放电是在氩气中进行的，实验中发现，不同的等离子体态有不同的分布函数，它们呈现出指数分布与幂分布。     

Studies of Laser-induced-MOCVDZinc Oxide Films

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MOVPE growth and characterization of a ‐plane AlGaN over the entire composition range

We report the metal organic vapor phase epitaxy (MOVPE) growth and characterization of non‐polar (11 0) a ‐plane Al_x Ga_1–xN on (1 02) r ‐plane sapphire substrates over the entire composition range. Al_x Ga_1–xN samples with ～0.8 μm thick layers and with x = 0, 0.18, 0.38, 0.46, 0.66, and 1.0 have been grown on r ‐plane sapphire substrates. The layer quality can be improved by using a 3‐stage AlN nucleation layer and appropriate V/III ratio switching following nucleation. All a ‐plane AlGaN epilayers show an anisotropic in‐plane mosaicity, strongly influenced by Al incorporation and growth conditions. Careful lattice parameter measurements show anisotropic in‐plane strain that results in an orthorhombic distortion of the hexagonal unit cell, making Al composition determination from X‐ray diffraction difficult. In general lower Al incorporation is seen in a ‐plane epilayers compared to c ‐plane samples grown under the same conditions. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency

Significant progress in the power conversion efficiency and brightness of InGaN-based light emitting diodes (LEDs) has paved the way for these devices to be considered for LED lighting. In this realm, however, the efficiency must be retained at high injection levels in order to generate the lumens required. Unfortunately, LEDs undergo a monotonic efficiency degradation starting at current densities even lower than 50 A/cm² which would hinder LED insertion into the general lighting market. The physical origins for the loss of efficiency retention are at present a topic of intense debate given its enormous implications. This paper reviews the current status of the field regarding the mechanisms that have been put forward as being responsible for the loss of efficiency, such as Auger recombination, electron overflow (spillover), current crowding, asymmetric injection of electrons and holes, and poor transport of holes through the active region, the last one being applicable to multiple quantum well designs. While the Auger recombination received early attention, increasing number of researchers seem to think otherwise at the moment in that it alone (if any) cannot explain the progressively worsening loss of efficiency reduction as the InN mole fraction is increased. Increasing number of reports seems to suggest that the electron overflow is one of the major causes of efficiency degradation. The physical driving force for this is likely to be the relatively poor hole concentration and transport, and skewed injection favoring electrons owing to their relatively high concentration. Most intriguingly there is recent experimental convincing evidence to suggest that quasi-ballistic electrons in the active region, which are not able to thermalize within the residence time and possibly longitudinal optical phonon lifetime, contribute to the carrier overflow which would require an entirely new thought process in the realm of LEDs.     

2.45 GHz ECR离子源的微波阻抗匹配

ECR离子源的等离子体阻抗对其微波传输与阻抗匹配设计至关重要。在中国科学院近代物理研究所现有的2.45 GHz ECR 质子源上,对等离子体阻抗进行了测量。首先用水吸收负载代替等离子体负载测量得到了所用微波窗阻抗,然后根据质子源测量数据,推算得到了等离子体阻抗。实验结果表明,脊波导输出端阻抗与后续负载不完全匹配,等离子体阻抗随微波功率变化呈非线性。这些结果为ECR离子源过渡匹配和微波窗的设计提供了参考依据。Plasma impedance of an ECR ion source is important for microwave transmission and impedance matching design. Plasma impedance was measured indirectly with the 2.45 GHz ECR proton source at the Institute of Modern Physics, Chinese Academy of Sciences. In the test, we got microwave window mpedance by using water absorption load instead of plasma load, and the source plasma impedance was derived from the test data with the 2.45 GHz ECR proton source and microwave window impedance. The experimental results show that ridge waveguide output impedance and the subsequent load does not exactly match, plasma impedance variation is nonlinear with microwave power. The achievedresult is useful in the design of ridged waveguide and microwave window.     

A model of gravity-induced distribution of material in plasma polymerized aerosols and films

A mathematical model of the volumetric part of plasma polymerization influenced by gravity is presented. Plasma-activated adhesion of monomer molecules to a surface of a germinal particle is assumed as a basic mechanism of particulate growth. The continuity equation for the flow of matter through the discharge has been formulated and solved in two extreme asymptotic approximations --for small and major duration of the process. Several non-equilibrium distribution functions of the polymer were obtained, for instance, an amount of the particles as a function of their size or time of fall. Within the adopted model this function demonstrates a sharp downward increase inside a discharge. In addition it contains such parameters as the free fall acceleration or reaction rate coefficients, variations of which enable control of the discharge and properties of the disperse medium.