Systematic study of epitaxy growth uniformity in a specific MOCVD reactor

Gallium nitride (GaN) is a direct bandgap semiconductor widely used in bright light‐emitting diodes (LEDs). Thin‐film GaN is grown by metal‐organic chemical vapour deposition (MOCVD) technique. Reliability, efficiency and durability of LEDs are influenced critically by the quality of GaN films. In this report, a systematic study has been performed to investigate and optimize the growth process. Fluid flow, heat transfer and chemical reactions are calculated for a specific close‐coupled showerhead (CCS) MOCVD reactor. Influences of reactor dimensions and growth parameters have been examined after introducing the new conceptions of growth uniformity and growth efficiency. It is found that GaN growth rate is mainly affected by the concentration of (CH3)3Ga:NH3 on the susceptor, while growth uniformity is mainly influenced by the recirculating flows above the susceptor caused by natural convection. Effect of gas inlet temperature and the susceptor temperature over the growth rate can be explained by two competing mechanisms. High growth efficiency can be achieved by optimizing the reactor design.     

制备GaN基材料的数值模拟研究进展

综述了紫外探测器的实际应用,特别介绍了紫外预警系统的作用原理;详细介绍了GaN基材料及其生长方法;对MOCVD法制备GaN基材料的过程做了详细描述,特别介绍了国内外MOCVD系统制备GaN基材料的数值模拟方法。     

Selective growth of ZnO nanodots prepared by metalorganic chemical vapor deposition on focused-ion beam-nanopatterned substrates

Selective formation of ZnO nanodots grown by metalorganic chemical vapor deposition (MOCVD) was achieved on focused-ion beam (FIB)-nanopatterned SiO₂ and Si substrates. The selective formation characteristics, dimension, and density of ZnO nanodots on FIB-nanopatterned substrates strongly depended on the FIB-patterning and MOCVD-growth conditions. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned SiO₂ substrates is attributed to a surfactant effect of the implanted Ga which leads to the formation of the preferred nucleation sites for the growth of ZnO nanodots, while that of ZnO nanodots on nanopatterned Si substrates is mainly considered in terms of the generation of surface atomic steps and kinks, which are created by Ga⁺ ion sputtering, on the patterned Si areas.     

金属β－二酮化合物用于MOCVD法生长铁电氧化物薄膜

对用于MOCVD法生长铁电氧化物薄膜的金属β－二酮化合物的制备、结构及性质进行了评述，对它们在生长铁电薄膜中的应用现状进行了介绍，并对它们的应用前景作了展望。     

B离子掺杂TiO2催化剂(TiO2－xBx)光催化活性的研究

采用溶胶-凝胶法制备出纳米TiO₂和TiO_2－xB_x催化剂. 光催化实验证明, TiO_2－xB_x催化剂的紫外、可见光催化活性均高于TiO₂. XRD, XPS和Raman结果表明, B离子是以取代式掺杂占据了TiO₂的O^2－的晶格位置. UV-Vis和PL谱的结果表明, B离子的2p轨道与O的2p轨道形成混合价带, 产生可见光响应, B离子的掺入有效地阻止了光生载流子的复合, 促进了其分离, 是TiO_2－xB_x催化剂紫外、可见光催化活性提高的主要原因.     

Studies of Laser-induced-MOCVDZinc Oxide Films

ＳｔｕｄｉｅｓｏｆＬａｓｅｒ－ｉｎｄｕｃｅｄ－ＭＯＣＶＤＺｉｎｃＯｘｉｄｅＦｉｌｍｓＲＥＮＰｅｎｇ－ｃｈｅｎｇ，ＴＡＮＺｈｏｎｇ－ｋｅａｎｄＬＵＯＷｅｎ－ｘｉｕ（ＣｅｉｉｔｅｒｆｏｒＦｕｎｃｔｉｏｎａｌＭａｔｅｒｉａｌｓＲｅｓｅａｒｃｈ，Ｑｉｎｇｄａ...     

Co—Mo／MgO—Al2O3水煤气耐硫变换催化剂失活的研究

利用Ｘ－射线衍射，扫描电镜，拉曼光谱，等离子发射光谱和比表面测定等方法研究了不同状态下失活及新鲜催化剂的结构，杂种类及含量。结果表明，超温使催化剂晶化明显，制备方法对催化剂结构有直接影响，再生使其强度降低，条形催化剂比较容易粉化，无机杂质是次要的失活原因。     

Syntheses, X-ray structures and CVD studies of trimethylphosphite stabilized silver(I) methanesulfonates

The preparation of {[(MeO)₃P]_n·AgO₃SCH₃} (n = 1, 2a; n = 2, 2b) is described. The molecular structure of 2a was determined by using X-ray single crystal analysis. Complex 2a contains an Ag₄ rectangular make-up, the centroid of which constitutes an inversion center. Complex 2b was used as precursor in the deposition of silver films using metal organic chemical vapor deposition (MOCVD) technique for the first time. The silver films obtained were characterized using scanning electron microscopy (SEM) and energy-dispersion X-ray (EDX) analysis.     

The Reaction Of Metal Trialkyls With Benzo[H]Quinolin-10-ol

IntroductionThechemistryoforganoaluminum,organogalliumandorganoindiumcomplexeshasattractedmuchat'tentionduenotonlytotheirinterestingstructuralandchemicalpropertiesbutalsotheirapplicationinsemiconductormaterialsl-5.InthecourseofourstudiesonexploringvolatileMOCVDprecursorsthathavethepropertiesoflowertoxicityandhigherstability,wehaverecentlyreportedonthesynthesisandcharacterizationofintermolecularadducts'-',novelbondingmodecomplexes",',andthecomplexesinwhichN/Omixed-donorcrownethersasligands'l'…     

Metallic Li in carbonaceous nanotubes grown by metalorganic chemical vapor deposition from a metalorganic precursor

Metallic Li in carbonaceous nanostructures was obtained in high concentration (as much as 33.4%) through metalorganic chemical vapor deposition involving certain lithium–aminoalkyl moieties, which are formed in situ , by decomposition of a precursor containing both cobalt and lithium. The bimetallic complex containing both lithium and cobalt was characterized by IR spectroscopy, mass spectroscopy, nuclear magnetic resonance spectroscopy, elemental analysis and thermogravimetric analysis. X‐ray photoelectron spectroscopy measurements performed on the as‐grown films demonstrate that lithium can be stable in metallic form in such a film. Results of X‐ray photoelectron spectroscopic analysis of the as‐grown films are presented as direct evidence of the formation and stabilization of metallic lithium in carbon nanotubes. Carbon nanotubes, encapsulating metallic lithium, can potentially act as a miniaturized nanobattery. Such a battery would be potentially useful in the next generation of communication and remote sensing devices, where a pulse of current is required for their operation. In addition, with metallic lithium, having an effective nuclear magnetic moment, such materials can be envisioned to show potential applications in devices based on nuclear magnetic resonances. Copyright © 2008 John Wiley & Sons, Ltd.