Facile synthesis of silver doped-copper oxide nano materials utilizing areca catechu (AC) leaf extract and their antidiabetic and anticancer studies

The present research highlights physical significance of green combination of metal oxide nanomaterials utilizing medicinal plant which has widely analyzed in different medical applications i.e., medicinal science, therapeutics. In this paper, we discussed environmentally benign approach for synthesizing silver doped copper oxide nanoparticles (Ag–CuO NPs) utilizing (ACLE). Scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) were utilized to confirm the size, crystalline structure and surface morphology of the obtained nanomaterials. The monoclinic crystalline structure of the Ag–CuO NPs as produced was revealed by XRD patterns. Morphological analysis disclosed the nano-based spherical configuration of Ag–CuO NPs, as well as their morphology and elemental composition. The anti-diabetic effect of Ag–CuO NPs was further investigated utilizing a yeast cell model and amylase inhibition. Here, a decrease in intracellular glucose and a delay in carbohydrate digestion indicate promising antidiabetic action. Furthermore, the prepared nanomaterial showed anticancer potential against the MCF-7 cancer cell line, with an IC ₅₀ value of 11.21 g/ml.     

La单掺4H-SiC电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及La掺杂4H-SiC的电子结构和光学性质进行理论计算。计算结果表明,未掺杂4C-SiC其禁带宽度为2.257 eV。La掺杂后带隙宽度下降为1.1143eV,导带最低点为G点,价带最高点为F点,是P型间接半导体。掺杂La原子在价带的低能区间贡献比较大,而对价带的高能区和导带的贡献比较小。未掺杂4H-SiC在光子能量为6.25 eV时,出现一个介电峰,这是由于价带电子向导带电子跃迁产生。而La掺杂后,出现3个介电峰,分别对应的光子能量为0.47eV、2.67eV、6.21eV,前两个介电峰是由于价带电子向杂质能级跃迁产生,第三个介电峰是由于价带电子向导带电子跃迁产生。La掺杂后4H-SiC变成负介电半导体材料。未掺杂4h-SiC的静态介电常数为2.01,La掺杂的静态常数为12.01。     

Ce掺杂6H-SiC电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及Ce掺杂6H-SiC的电子结构和光学性质进行理论计算.计算结果表明,未掺杂6H-SiC是间接带隙半导体,其禁带宽度为2.045 eV,掺杂Ce元素,带隙宽度下降为0.812 eV.未掺杂6H-SiC在价带的低能区,Si-3s、C-2s电子轨道对态密度的贡献较大,在价带的高能区,主要是由Si-3p、Si-3s、C-2p态组成.掺杂后Ce原子的4f轨道主要贡献在导带部分,掺杂后电导率提高.未掺杂时,只有一个介电峰,是价带电子跃迁到导带电子所致,掺杂后有两个介电峰,第一个介电峰是由于导带电子跃迁到Ce原子4f轨道上产生,第二个峰是价带电子向导带电子跃迁产生.未掺杂6H-SiC,在能量为10.31 eV处吸收系数达到最大值,掺杂后在能量为6.57 eV处,吸收系数达到最大值.     

Eu-doped ZnO nanoparticles: Sonochemical synthesis,characterization, and sonocatalytic application

Undoped and europium (III)-doped ZnO nanoparticles were prepared by a sonochemical method. The prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) analysis. The crystalline sizes of undoped and 3% Eu-doped ZnO were found to be 16.04 and 8.22 nm, respectively. The particle size of Eu-doped ZnO nanoparticles was much smaller than that of pure ZnO. The synthesized nanocatalysts were used for the sonocatalytic degradation of Acid Red 17. Among the Eu-doped ZnO catalysts, 3% Eu-doped ZnO nanoparticles showed the highest sonocatalytic activity. The effects of various parameters such as catalyst loading, initial dye concentration, pH, ultrasonic power, the effect of oxidizing agents, and the presence of anions were investigated. The produced intermediates of the sonocatalytic process were monitored by GC–Mass (GC–MS) spectrometry.     

Preparation and Properties of Doped Lanthanum Gallate Film on a Ni/SDC Porous Anode Support

IntroductionIn intermediate-temperature solid oxide fuel cells(SOFCs),doped ceria with a fluorite structure anddoped lanthanum gallate(LSGM)with a perovskitestructure are commonly used as electrolyte materials.However,the former easily exhibits an electro…     

硫和银共掺杂介孔TiO2的制备、表征及其对染料的光催化降解活性

以P123为模板,以钛酸四正丁酯、硝酸银和硫脲为原料采用模板法制备了一系列硫和银共掺杂介孔TiO₂光催化材料．利用SEM、XRD、BET和紫外-可见光谱等技术对其形貌、晶体结构及表面结构、光吸收特性等进行了表征．以甲基橙溶液的光催化降解为模型反应,考察了不同掺杂量的样品在紫外和可见光下的光催化性能．结果表明,用模板法制备的共掺杂介孔TiO₂光催化材料在紫外和可见光条件下较纯介孔TiO₂和单掺杂介孔TiO₂对甲基橙溶液具有更好的光催化降解效果, 且硫和银的掺杂量及样品焙烧温度显著影响该材料的催化性能．当硫掺杂量为2mol%和银掺杂量为1mol%,在500 oC 焙烧2 h所得光催化材料的催化性能最佳,4 h即可使甲基橙的降解率达98.8%,重复使用4次仍可使甲基橙的降解率保持在87.5%以上     

Ce掺杂CrSi2电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及Ce掺杂CrSi2的电子结构和光学性质进行理论计算。计算结果表明,未掺杂CrSi2是间接带隙半导体,其禁带宽度为0.392 eV,掺杂Ce元素,仍然是间接半导体,带隙宽度下降为0.031eV。未掺杂CrSi2在费米能级附近主要由Cr-5d、Si-3p态贡献。Ce掺杂后在费米能级附近主要由Cr-5d轨道,Ce-4f轨道,C-2p,Si-3p轨道贡献,掺杂后电导率提高。未掺杂CrSi2有两个介电峰,掺杂后,只有一个介电峰。未掺杂CrSi2,在能量为6.008处吸收系数达到最大值,掺杂后在能量为5.009eV处,吸收系数达到最大值。     

Synthesis,identification and study of electrical conductivity of the doped poly aniline

Poly aniline and poly aniline doped with 2,5-dimethyl benzene sulfonic acid (PXSA), 4-hydroxy-m-benzene disulfonic acid (PDSA), 3-chloro-4-hydroxybenzene sulfonic acid (OCPSA) were prepared. The polymers are identified by FT-IR and UV–vis spectroscopy. The ionic conductivities of poly aniline and poly aniline doped with 2,5-dimethyl benzene sulfonic acid (PXSA), 4-hydroxy-m-benzene disulfonic acid (PDSA), 3-chloro-4-hydroxybenzene sulfonic acid (OCPSA) were studied as a function of weight of the dopant compounds. It is noted that an increase of the conductance of poly aniline by doping with OCPSA, and became equal to 0.001321 Ω^?1 for 1 g higher than the conductance for the poly aniline when it is doped with OCPSA.     

掺杂聚乙炔导电机理研究

本文以多烯(17个碳原子)模拟反式聚乙炔链,位于两个多烯链平面之间的钠原子为掺杂剂,用 CNDO/2方法讨论了掺杂聚乙炔的微观导电机理,尝试并分析了用轨道理论的离域方法处理定域问题的具体方法.在我们的计算方法及计算范围内、负电孤子借助于钠原子在两链间跃迂。在低量掺杂情况下,参考链上孤子的存在对这种跃迂起辅助作用;电荷密度、原子轨道布居、能量分割及沿分子轨道形状等的结果同样支持了这一结论.     

掺CdSxSe1-x玻璃波导分布反馈光学双稳器件

本文给出了掺CdS_xSe_1-x玻璃平面波导分布反馈(DFB)光学双稳器件的设计和制备方法,实现了低功耗、快速的本征光学双稳。