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81.
The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer 总被引:4,自引:0,他引:4
X.Y. Chen K.H. Wong C.L. Mak J.M. Liu X.B. Yin M. Wang Z.G. Liu 《Applied Physics A: Materials Science & Processing》2002,75(4):545-549
Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find
that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111)
and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions
of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were
of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented,
(100)-oriented and polycrystalline LNO, respectively.
Received: 2 April 2001 / Accepted: 23 October 2001 / Published online: 3 June 2002 相似文献
82.
用经验赝势方法计算了体ZnSe以及ZnSe/GaAs单异质结系统中ZnSe外延层г、X、L等特殊对称点导带底能量随压力的变化。结果表明,同Si、Ge、GaAs等半导体材料不同,ZnSe的X点导带底具有正的压力系数,但比г点的压力系数小,这是ZnSe材料以及ZnSe基异质结构材料发生直接禁带向间接禁带的转变时所需转变压力较大的根本原因。研究了ZnSe/GaAs异质结构中晶格失配造成的应变对外延层г、X、L对称点压力系数的影响,表明这种晶格失配造成的应变可以极大地减小ZnSe外延层材料由直接禁带向间接禁带的转变压力。 相似文献
83.
84.
Nicolas Bergeron 《Mathematische Zeitschrift》2002,241(1):101-125
Let M be an arithmetic hyperbolic manifold and be a codimension 1 geodesic cycle. In this paper, we study the asymptotic growth of the -norm of the lifts of F in the congruence tower above M. We obtain an explicit value for the growth rate of this norm. In particular, we provide a new proof of a celebrated result
of Millson [Mi] on the homology of the arithmetic hyperbolic manifolds. The method is quite general and gives a new way of
getting non zero homology classes in certain locally symmetric spaces.
Received: 20 April 2001; in final form: 26 September 2001 / Published online: 28 February 2002 相似文献
85.
Patrick Dehornoy 《Algebra Universalis》2002,48(2):223-248
We solve the word problem of the identity x(yz) = (xy)(yz) by investigating a certain group describing the geometry of that identity. We also construct a concrete realization of the
one-generated free algebra relative to the above identity.
Received March 23, 2001; accepted in final form July 6, 2002. 相似文献
86.
Chuanming Zong 《Monatshefte für Mathematik》2002,134(3):247-255
In this article we study the simultaneous packing and covering constants of two-dimensional centrally symmetric convex domains.
Besides an identity result between translative case and lattice case and a general upper bound, exact values for some special
domains are determined. Similar to Mahler and Reinhardt’s result about packing densities, we show that the simultaneous packing
and covering constant of an octagon is larger than that of a circle.
(Received 17 January 2001; in revised form 13 July 2001) 相似文献
87.
Kouichi Akahane Naokatsu Yamamoto Naoki Ohtani 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):295
We fabricated InAs quantum dots (QDs) with a GaAsSb strain-reducing layer (SRL) on a GaAs(0 0 1) substrate. The wavelength of emission from InAs QD is shown to be controllable by changing the composition and thickness of the SRL. An increase in photoluminescence intensity with increasing compositions of Sb and thickness of the GaAsSb SRL is also seen. The efficiency of radiative recombination was improved under both conditions because the InAs/GaAsSb/GaAs hetero-interface band structure more effectively suppressed carrier escape from the InAs QDs. 相似文献
88.
S. J. Cheng W. Sheng P. Hawrylak S. Raymond S. Studenikin A. Sachrajda Z. Wasilewski A. Babinski M. Potemski G. Ortner M. Bayer 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):211
We present results of calculations and experiments on electron–hole complexes in InGaAs/GaAs self-assembled quantum dots in high magnetic field (B). Due to hidden symmetries, the chemical potential of an N-exciton system at special B fields becomes insensitive to the exciton number as well as the magnetic field. This results in plateau regions of high intensity in measured magneto-PL spectrum. Theoretical calculations using exact diagonalization techniques successfully explain the measured magneto-photoluminescence spectrum with B fields up to 28 T. 相似文献
89.
应用TGT法生长了直径为75mm的U:CaF2晶体,宏观上透明完整.应用公式K0=Cs/Cl计算了U在CaF2晶体中的分凝系数等于0.53.应用溶质分布一般公式Cs=K0C0(1-g)K0-1,计算U的浓度分布与测量值,数值符合说明晶体生长过程接近平衡状态.分析不同条件下生长的U: CaF2晶体的晶胞参数和吸收光谱,结果表明生长气氛决定U的价态及电荷补偿机理:无PbF2存在的条件下,U为+4价,晶体呈绿色;PbF2的加入起到氟化去氧作用,U倾向于以离子半径最接近于Ca2+的U3+存在,晶体呈红色.从晶体生长开始到结束的部位,U3+:CaF2晶体吸收光谱的峰位不变,峰强呈现与U浓度相同的增加趋势.U3+:CaF2晶体外层厚约5mm处呈黄色,含有U3+和U2+的混合价态离子,其原理是石墨坩埚的还原作用通过单质铅,使部分的U3+进一步还原成了U2+.
关键词:
铀
氟化钙晶体
分凝系数
晶胞参数 相似文献
90.
James Murdock 《Journal of Differential Equations》2004,205(2):424-465
Hypernormal forms (unique normal forms, simplest normal forms) are investigated both from the standpoint of foundational theory and algorithms suitable for use with computer algebra. The Baider theory of the Campbell-Hausdorff group is refined, by a study of its subgroups, to determine the smallest substages into which the hypernormalization process can be divided. This leads to a linear algebra algorithm to compute the generators needed for each substage with the least amount of work. A concrete interpretation of Jan Sanders’ spectral sequence for hypernormal forms is presented. Examples are given, and a proof is given for a little-known theorem of Belitskii expressing the hypernormal form space (in the inner product style) as the kernel of a higher-order differential operator. 相似文献