Synthesis,characterization, corrosion inhibition of mild steel in HCl (0.5 N) solution and solid‐state electrical conductivity of new Co(II), Ni(II), Cu(II) and Zn(II) complexes

This work consists of a study of the corrosion‐inhibiting and semiconducting properties of new binuclear Co(II), Ni(II), Cu(II) and Zn(II) complexes with a Schiff base, H₂L, obtained from the 2:1 M condensation of salicylaldehyde and o‐dianisidine, respectively. Elemental, spectral and thermal analyses were used to characterize these complexes. The magnetic susceptibilities of these complexes were also determined. Weight loss, potentiodynamic polarization and scanning optical microscopy were the techniques used to investigate the efficiency of these new compounds as corrosion inhibitors. The antibacterial activity of the compounds was measured against sulfate‐reducing bacteria. It was found that inhibition occurs via the chemisorption of metal complexes on the steel surface. This absorption obeys the Langmuir adsorption isotherm model.     

DC Electrical Conductivity of the Direct Electrochemically Synthesized Polythiophene Metal Complexes

Electrochemical anodic oxidation of a metal anode in an acetone solution of 2,5-diamino-3,4-dicyanothiophene gave the polythiophene metal complexes of Co, Ni, Cu, Zn, Cd, and Sn. Chemical analyses, as well as FTIR and electronic spectral data, are presented to confirm the formulation of the isolated materials. DC electrical conductivity measurements of the polymer complexes were measured in the range 300–500 K in the annealed and 5% doped forms. The products gave electrical conductivity in the semi-conducting region that increased by heat.     

The Synthesis,Characterization and DC Electrical Conductivity of Polypyrrole‐Zirconium Complex

Polypyrrole‐zirconium complex has been synthesized by reacting 2‐amino‐3,4‐dicyano‐5‐mercaptopyrrole with zirconium nitrate in absolute ethanol under reflux for 24 h. The product has been characterized by elemental analyses, FTIR spectroscopy, in addition to thermal analysis (TGA and DSC) and its solubility has been investigated. The DC electrical conductivity variation of polypyrrole‐zirconium complex has been studied in the temperature range 300–500 K after annealing for 24 h at 100°C and doping with I₂, FeCl₃ and CuCl₂ · H₂O for comparison. An attempt has been made to interpret the DC electrical conductivity behavior and thermal properties to chain length, dopant used, polymer structure and attached groups.     

Investigation on ion movement in the fringe-field switching mode depending on resistivity of alignment layer and dielectric anisotropic sign of liquid crystal

Adsorption and desorption of ions at interface between liquid crystal and alignment layer in liquid crystal displays play a crucial role in residual direct current voltage associated with image sticking. In this article, the dependency of such adsorption and desorption of ions on resistivity of alignment layer and sign of liquid crystal dielectric anisotropy in the fringe-field liquid crystal cell has been investigated. Our studies show that the time constant of ions during adsorption and desorption depends upon resistivity and dielectric constant of liquid crystal and alignment layer, and most strongly influenced by the resistivity of alignment layer such that the one with lower resistivity in two orders shows much faster adsorption and desorption at the interface than that of the one with higher resistivity.     

高压交直流同塔输电线路无线电干扰与可听噪声的计算

为了寻求一种适合交直流同塔架设线路的无线电干扰与可听噪声计算方法,从理论上分析了混合线路表面场强的特点,利用线性叠加原理求出混合线路表面场强,并结合晴天和雨天对交流和直流线路电晕程度的不同影响,提出在同一种天气状况下计算交直流线路无线电干扰与可听噪声。用3种计算无线电干扰与可听噪声的方法,分晴天和雨天情况进行计算比较,结果表明3种方法中 BPA 修正公式计算值最大,该方法可视为目前计算交直流同塔线路无线电干扰与可听噪声的有效方法。     

Electric field induced metal–insulator transition in VO2 thin film based on FTO/VO2/FTO structure

A VO₂ thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO₂ (FTO) conductive glass substrate. The FTO/VO₂/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I–V hysteresis loop for the FTO/VO₂/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO₂/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.     

基于单神经元自适应PID的PLC直流电机控制系统

针对微型计算机和单片机进行直流电机控制时,抗干扰能力和可靠性差等缺点,提出了一种基于单神经元PID(Proportional-Integral-Derivative)算法的PLC(Programmable Logic Controler)控制直流电机的调速系统,设计了PLC控制D/A(Digital/Analog)转换电路、直流电机驱动电路、转速脉冲反馈电路,研究了单神经元自适应PID控制算法。将有监督单神经元控制算法应用于直流电机调速系统,通过调整神经元控制器的加权系数,实现自适应PID的最优控制。单神经元PID调节在大范围调速和抑制超调方面都有明显的改善,进而提高了直流调速系统的精度。通过系统动态测试,实现了PLC控制直流电机正反转自动调速,直流电机在稳态运行时,转速误差小于1 rad/s。     

高压直流断路器测控装置的设计与试验分析

直流输(配)电是目前电网发展的趋势,而高压直流断路器的研发是影响其发展的关键技术之一。测量与控制装置的研究是高压直流断路器的研发要点。采用高压电力电子器件,DSP+FPGA相结合的控制方式,对其测控装置进行研究分析,提出了区间阈值的控制方法及相应的控制时序,从高压直流输电、能源多样化的发展需求入手,将机械开关和固态开光相结合,设计了一套混合式高压直流断路器样机。通过对样机进行合分闸试验及故障分闸试验,证明了所研制的高压直流断路器样机具有分闸动作快,限弧能力强,动作一致性好等优点。     

Optical,electrical and magnetic properties of nanostructured Mn3O4 synthesized through a facile chemical route

Nanostructured Mn₃O₄ sample with an average crystallite size of ∼15 nm is synthesized via the reduction of potassium permanganate using hydrazine. The average particle size obtained from the Transmission Electron Microscopy analysis is in good agreement with the average crystallite size estimated from X-ray diffraction analysis. The presence of Mn⁴⁺ ions at the octahedral sites is inferred from the results of Raman, UV–visible absorption and X-ray photoelectron spectroscopy analyzes. DC electrical conductivity of the sample in the temperature range 313–423 K, is about five orders of magnitude larger than that reported for single crystalline Mn₃O₄ sample. The dominant conduction mechanism is identified to be of the polaronic hopping of holes between cations in the octahedral sites. The zero field cooled and field cooled magnetization of the sample is studied in the range 20–300 K. The Curie temperature for the sample is about 45 K, below which the sample is ferrimagnetic. A blocking temperature of 35 K is observed in the field cooled curve. It is observed that the sample shows hysteresis at temperatures below the Curie temperature with no saturation, even at an applied field (20 kOe). The presence of an ordered core and disordered surface of spin arrangements is observed from the magnetization studies. Above the Curie temperature, the sample shows linear dependence of magnetization on applied field with no hysteresis characteristic of paramagnetic phase.     

Modulating microstructure and optical properties of hydrogenated nanocrystalline silicon photovoltaic materials prepared under hydrogen diluted silane PECVD by various DC bias

Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were fabricated by plasma enhanced chemical vapor deposition under the various negative substrate bias voltages with hydrogen as a diluent of silane. The microstructure and optical properties of nc-Si:H thin films were studied by Raman scattering spectroscopy, X-ray diffraction (XRD), transmission electron microscopy, and optical transmission spectroscopy. Raman spectra and XRD pattern reveal that applying negative bias voltages at the moderate level favors the enhancement of crystalline volume fraction, increase of crystallite sizes and decrease of residual stress. We also demonstrated that the negative direct current bias can be used to modulate the volume fraction of voids, refractive index, absorption coefficient, compactness and ordered degree of nc-Si:H films. It is found that the film deposited at −80 V shows not only high crystallinity, size of crystallite, and static index n₀ but also low residual stress and volume fraction of voids. Furthermore, the microstructural evolution mechanism of nc-Si:H thin films prepared at different bias voltages is tentatively explored.