基于PWM的高压直流电源设计

在单相PWM交流变换电路分析的基础上,首先根据给定的系统参数指标,完成了三相交流斩波电路与12脉波整流器的设计;其次在Matlab/Simulink环境下,搭建了系统仿真模型.仿真结果表明,该直流电源在输入电压及负载变化时,能够快速响应,输出稳定;最后研制了实验样机,实验结果表明该电路的输出稳定,精度高,从而验证了本文的正确性和实用性.     

Large impact in electrical properties of polypropylene by improving the filler-matrix interface effect in PP/PS blends

Inorganic nanoparticles are widely used to improve space charge behavior, DC breakdown strength and other electrical properties of polymer insulating materials, but the uniform distribution of inorganic nanofillers in matrix is difficult due to their agglomeration and bad compatibility with the polymeric matrix. In this paper, polypropylene (PP)/polystyrene (PS) blends were prepared to suppress space charge accumulation and improve DC breakdown strength. Polypropylene-g-polystyrene (PP-g-PS) graft copolymer was used as compatibilizer to improve the compatibility of PP matrix and PS filler. The evolution of microstructure of PP/PS blends were investigated by scanning electron microscope (SEM), the space charge distributions were measured by a pulsed electro-acoustic (PEA) system, and DC breakdown strength was also tested. The morphologies show that the size of PS particles reduced to 310 nm when the content of PP-g-PS graft copolymer increased to 24 wt%, and the interaction between PP matrix and PS particles enhanced. The presence of PS particles in all PP/PS blends suppressed the space charge accumulation compared to neat PP, but the DC breakdown strength in uncompatibilized blend was lower than neat PP. The increasing of content of PP-g-PS improved the DC breakdown strength with the maximum value of 408.9 kV/mm was obtained. This may attribute to excellent interface structure formed between PP matrix and PS particles.     

不同绝缘支柱材料及改善措施对高压直流分压器测量准确度的影响研究

在1×10~(-5)数量级上提高高压直流电阻分压器的测量准确度,对直流高电压的精密测量具有重要意义。为减小高压直流分压器中沿绝缘支柱表面的泄漏电流,研究了不同绝缘支柱材料及改善措施对分压器测量准确度的影响。搭建包含50 kV被测分压器、100 kV标准分压器和同步采集系统的试验平台。在完成高精度数字万用表标定试验后,开展了有机玻璃和聚四氟乙烯材料对分压器测量准确度影响的测量试验。研究了增加内屏蔽电阻和在分压器内部充氮气对分压器测量准确度的改善效果。得出的结论对设计0.005级及以上准确度等级的高压直流电阻分压器具有一定的借鉴作用。     

分布式变压器直流偏磁多状态量检测技术研究

直流偏磁严重威胁着电力变压器的安全运行。为了确定直流偏磁的影响范围及程度,开发了分布式电力变压器直流偏磁中性点电流、噪声以及振动多状态量监测系统并投入实际应用。系统由分布式监测终端以及远程监测服务器构成。由霍尔传感器、传声器以及加速度传感器构成检测系统前端,对中性点电流、噪声以及振动信号进行了50 Hz及其谐频幅值分析。通过设计1/3倍频程滤波器计算噪声信号1/3倍频程以及等效A声级,检测结果由监测终端分析整理后通过GPRS网络远程传输至监测服务器并存储至数据库。利用监测服务器实现当前各变压器直流偏磁状况实时显示以及历史数据查询。现场应用结果表明,所设计的分布式变压器直流偏磁多状态量监测系统测量结果准确、信号传输稳定,有助于确定直流偏磁的影响范围及程度,为直流偏磁的针对性控制提供技术支持。     

D-和L-丙氨酸的低温磁相变——磁场变化下的比热和直流磁化率(英文)

为了解D-和L-丙氨酸单晶晶格在极低温下是否存在磁手性相变,在2-20 K下改变磁场强度(0,1,3,5T)测定其比热.实验结果表明比热和温度之间的函数关系很好地符合C(T)=aT3+b/T2方程,其中aT3项为晶格声子的贡献,可由公式CV=(12/5)π4R(T/ΘD)3来描述(ΘD为德拜温度),b/T2项为磁场对比热的贡献.实验发现,在2-20 K范围内D-和L-丙氨酸单晶在不同磁场强度下均存在Boson峰(在Cp/T3-T曲线中表现为一个最大值).磁的贡献导致D-和L-丙氨酸单晶的四条Cp/T3-T曲线在2-12 K时不重合,且在12-20 K时消失,此即Schottky反常.零磁场下,D-和L-丙氨酸的Boson峰分别为9.44和10.86 K;德拜温度分别为151.5和152.7 K.结合磁场强度1 T下的直流磁化率测定,发现在温度低于5 K时,D-和L-丙氨酸单晶有相反的磁化率行为,反映了核自旋和电子自旋弱相互作用的手性表现.     

青海产6种凤毛菊属植物微量元素分析比较

为了比较青海产6种凤毛菊属植物微量元素的含量,应用火焰原子吸收光谱法分析了青海产6种凤毛菊属植物中微量元素的含量.结果表明,水母雪莲中钙和锰的含量最高分别为8148.58mg/kg和312.55mg/kg,唐古特雪莲中铁和锌的含量最高达5798.98、46.22mg/kg.重齿凤毛菊中铜的含量最高为6.09mg/kg....     

40Gbps NRZ在基于宽带CFBG色散补偿的G.652光纤中无电中继传输500km

在基于宽带CFBG色散补偿的G.652光纤中,40Gbps NRZ码无电中继传输500km,在误码率BER=10(-10)下的功率代价约为2.2dB,积累1h的误码率为7.3×10(-12).传输系统中采用的CFBG的3dB带宽约为1.2nm,中心波长处时延纹波小于25ps,反射谱纹波小于2dB,差分群时延小于1ps....     

Influence of DC electric field on the Lennard-Jones potential and phonon vibrations of carbon nanotube on catalyst

Influence of DC electric field on carbon nanotube (CNT) growth in chemical vapor deposition is studied. Investigation of electric field effect in van der Waals interaction shows that increase in DC electric field raises the magnitude of attractive term of the Lennard-Jones potential. By using a theoretical model based on phonon vibrations of CNT on catalyst, it is shown that there is an optimum field for growth. Also it is observed that CNT under optimum electric field is longer than CNT in the absence of field. Finally, the relation between optimum DC electric field and type of catalyst is investigated and for some intervals of electric field, the best catalyst is introduced, which is very useful for experimental researches.     

Effect of substitution of K ions on the structural and electrical properties of nanocrystalline MgAl2O4 spinel oxide

Potassium substituted nanosized magnesium aluminates having a nominal composition Mg_1−xK_xAl₂O₄ where x=0.0, 0.25, 0.5, 0.75, 1.0 have been synthesized by the chemical co-precipitation method. The samples have been characterized by means of X-ray diffraction (XRD), scanning electron microscope (SEM), and dc electrical resistivity measurements. The XRD results reveal that the samples are spinel single phase cubic close packed crystalline materials. The calculated crystallite size ranges between 6 and 8 nm. The behaviour of the lattice constant seems to deviate from the Vegard's law. While X-ray density clearly increases, the bulk density and consequently, the percentage porosity do not exhibit a significant change on increasing the K⁺ content. The SEM micrographs suggest homogeneous distribution of the nanocrystallites in the samples. The dc electrical resistivity exhibits a typical semiconducting behaviour. Substitution of a Mg²⁺ ion by a K⁺ ion provides an extra hole to the system, which forms small polaron. Thermally activated hopping of these small polarons is believed to be the conduction mechanism in the Mg_1−xK_xAl₂O₄. The activation energy of hopping of small polarons has been calculated and found K⁺ ions content dependent.     

Molybdenum thin film deposited by in-line DC magnetron sputtering as a back contact for Cu(In,Ga)Se2 solar cells

In this paper, we reported the effect of the power and the working pressure on the molybdenum (Mo) films deposited using an in-line direct current (DC) magnetron sputtering system. The electrical and the structural properties of Mo film were improved by increasing DC power from 1 to 3 kW. On the other side, the resistivity of the Mo films became higher with the increasing working pressure. However, the adhesion property was improved when the working pressure was higher. In this work, in order to obtain an optimal Mo film as a back metal contact of Cu(In,Ga)Se₂ (CIGS) solar cells, a bilayer Mo film was formed through the different film structures depending on the working pressure. The first layer was formed at a high pressure of 12 mTorr for a better adhesion and the second layer was formed at a low pressure of 3 mTorr for a lower resistivity.