Loop quantum gravity and black hole entropy quantization

Using the spin networks and the asymptotic quasinormal mode frequencies of black holes given by loop quantum gravity, the minimum horizon area gap is obtained. Then the quantum area spectrum of black holes is derived and the black hole entropy is a realized quantization. The results show that the black hole entropy given by loop quantum gravity is in full accord with the Bekenstein-Hawking entropy with a suitable Immirzi. Supported by the National Natural Science Foundation of China (Grant No. 10773002)     

Optical decoherence and persistent spectral hole burning in Er:LiNbO3

Developing new resonant optical materials for spatial-spectral holography and quantum information applications requires detailed knowledge of the decoherence and population relaxation dynamics for the quantum states involved in the optical transitions, motivating the need for fundamental material studies. We report recent progress in studying these properties in erbium-doped lithium niobate at liquid helium temperatures. The influence of temperature, applied magnetic fields, measurement timescale, and dopant concentration were probed using photon echo spectroscopy and time-resolved spectral hole burning on the 1532 nm transition of Er³⁺:LiNbO₃. Effects of spectral diffusion due to interactions between Er³⁺ ions and between the Er³⁺ ion and ⁷Li and ⁹³Nb nuclear spins in the host lattice were observed. In addition, long-lived persistent spectral storage of seconds to minutes was observed due to non-equilibrium population redistribution among superhyperfine states.     

Influences of the Current Transverse Profile on the Transverse Mode Competition of VCSELs Diodes

A spatially independent model of vertical-cavity surface-emitting lasers (VCSELs) is derived by integrating the spatially dependent rate equations over the cross section of the cavity of a VCSEL. The angular and radial non-uniformities of the injection current are taken into account. The well-known LP modes of a weakly-guiding cylindrical waveguide are employed to describe the transverse modal structure in the VCSEL cavity. This model is solved in a self-consistent way by using the 4th order Runge-Kutta method. The dependence of transverse mode competition on the current intensity, the angular and radial non-uniformities of the injection current, and the geometrical parameters of the electrical contact are thoroughly investigated and analyzed. The results are useful to the optimum design of the optical transverse modal structure of VCSELs.     

Prospects of Sol-Gel Process for Spectral Hole-Burning Glasses

Persistent spectral hole burning was studied in Eu³⁺ ions-doped Al₂O₃-SiO₂ glass prepared by a sol-gel method. The gel synthesized by the hydrolysis of Si- and Al-alkoxides and EuCl₃·6H₂O was heated in air and hydrogen gas atmospheres. For the glass heated in air to contain OH bonds, the hole was formed by the photoinduced rearrangement of the OH bonds surrounding the Eu³⁺ ions, and was thermally refilled and erased above 200 K. On the other hand, the glass heated in hydrogen gas showed the hole spectrum above 200 K. It was found that the hole depth was independent of the temperature and was 7% of the total intensity at room temperature. The proposed mechanism was the electron transfer between the Eu³⁺ ions and the defect centers formed in glass matrix.     

Spherical dye-doped silica particles

Organic dyes such as water soluble porphyrins were incorporated into monodispersed SiO₂ particles using the sol-gel technique (the Stober synthesis) and their monomeric and dimeric properties were investigated by aiming at the microcavity effect. Doping efficiencies of dyes into SiO₂ particles depended on dye's hydrophilic properties. The doping efficiency of a porphyrin, TTMAPP, decreased with increasing the nominal content in the starting solution and the doping content showed the maximum value of 1.6×10^–5 mol/g SiO₂. With increasing the TTMAPP content, spectra of doped particles were changed from dimeric to monomeric nature; the absorption peak due to dimers disappeared and halfwidth of absorption at Soret band decreased. This unusual change was caused by the decrease of particle sizes by dye doping. The TTMAPP-doped sample having monomeric spectrum showed the fluorescence life time of 8.5 nsec and photochemical hole burning at about 5 K.     

高分子阴离子电导的研究

制备了含Ｉ＾－榻解质薄膜,用阻抗谱法测量了样品的Ｉ＾－电导率,分析了样品的频响特性曲线,用Ｗａｇｎｅｒ直流极化法测量了样品的电子电导。实验发现,此阴离子导体几乎和相应的含Ｎａ＾＋有相同的离子电导率,且随着碘含量的增加, 率增大。离子电导实验结果表明,在此阴离子导体中,电子电导占总电导率的９％,而空穴的导导率比电子电导率小１￣２个数量级。     

BaF（Cl,Br）：Sm^2＋的光谱烧孔与光激励发光过程

Ｘ射线辐照前后，在ＢａＦ（Ｃｌ，Ｂｒ）：Ｓｍ＾２＋中以５６０ｎｍ的Ｎｄ：ＹＡＧ脉冲光在液氮温度下进行了双光子烧孔实验和光激励发光实验，结果表明，Ｓｍ＾２＋掺杂的碱土金属氟卤化物光谱烧孔过程中伴随着光激励发光过程，这一过程直接影响光谱烧孔过程的进行。     

Organic electroluminescent device with aromatic amine-containing polymer as a hole transport layer (II): Poly(arylene ether sulfone)-containing tetraphenylbenzidine

Organic electroluminescent devices were fabricated using a poly(arylene ether sulfone)-containing tetraphenylbenzidine (PTPDES) and tris(8-quinolinolato)-aluminum(III) complex, Alq, as the hole transport layer and the electron-transporting emitter layer, respectively. A device structure of glass substrate/indium—tin oxide (ITO)/PTPDES/Alq/Mg : Ag was employed. Hole injection from ITO through the PTPDES layer to the Alq layer and concomitant electroluminescence from the Alq layer were observed. Bright green light with a luminance of 14,000 cd/m² was observed at a drive voltage of 14 V, indicating that the polymer possesses a high hole mobility and a high electron-blocking capability.     

An organic electroluminescent device with a molecularly doped polymer hole transport layer

Electroluminescent(EL) devices have been fabricated using four different polymers with different glass transition temperatures (T_g) dispersed with N,N′-bis-(3-methylphenyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) as a hole transport layer and tris(8-hydroxyquinoline) aluminum (Alq₃) as an emitting layer. It was found that the higher the T_g of the polymer, the longer the lifetime of the device. From observations of TPD-doped polymer films with optical microscope and atomic force microscope, dispersing TPD in the polymers was found to suppress the crystallization that causes the roughness of the film surface. It was also observed that the higher the T_g of the host polymers, the more difficult TPD crystallization was. The property of the EL device with polyethersulfone (PES) dispersed with TPD was also investigated. The lifetime of EL device with the TPD doped PES film was improved more than five times at a current density below 10 mA/cm² compared with the device with a conventional TPD hole transport layer. © 1997 John Wiley & Sons, Ltd.