彩电中I2C总线系统调整

介绍了彩电中 I2 C总线系统的控制和调整原理 ,以及实例机型的调整方法 .     

第二大特征值不超过√5—1／2的连通线图

给出了互二大特征值不超过√5－1／2的所有连通线图，它们包括三大类和十大特殊情形。     

3β—取代5—甾烯并—1—取代[17,16—C]吡唑啉—5—酮和3β—取代5—甾烯并[17,16—C]异恶唑啉—5—酮的合成

以3β－取代5－甾烯－17－酮与碳酸二甲酯经Claisen综合，所得产物再分别与肼或羟胺反应，设计合成了几种3β－取代5－甾烯并－1－取代[17,6-C]吡唑啉－5－酮和3β－取代5－甾烯并[17,16-C]异恶唑啉－5－酮，其结构经元素分析、IR、^1H NMR和^13C NMR确证。     

炼钢─连铸─热轧直接热装一体化计划

从计划角度重点分析了钢铁生产中炼钢、连铸、热轧三者之间联接的较高模式－直接热装轧制计划系统的实现方式，并给出了较为具体的方案。     

基于B/S模式的年度考核管理系统的设计与实现

本文阐述了新疆师范大学年度考核管理系统的功能、设计与实现。     

基于Pro/E 的机翼型风机叶片的建模及平面展开

基于先进的3D设计软件Pro/Engineer，模拟离心式风机叶片的成形理论及构形特点，将风机叶片的建模、运算、绘图、下料全部由计算机完成，直接输出精确的下料图纸，大大简化了设计过程，并且提高了设计精度。     

Study of hot bands in the B2Σ+u-X2Σ+g system of C-2 anion

Optical heterodyne magnetic rotation enhanced velocity modulation spectroscopy was employed to observe the visible absorption spectra of the B^2Σ^+_u-X^2Σ^+_g electronic transition of C^-_2. Four hot bands (0,1), (1,2), (2,3) and (3,4) have been observed and the band (3,4) is measured directly for the first time, so far as we know, by absorption. A rotational analysis was carried out to obtain molecular constants. With the Franck－Condon principle and the vibrational Boltzmann distribution, we have estimated the vibrational temperature of C^-_2 to be about 3000K.     

C—Bezier曲线

讨论了C—Bezier曲线的端点特性和曲线的性质，给出了C—Bezier曲线和Bezier曲线的G^1光滑拼接和G^2光滑拼接的几何条件，并利用C—Bezier曲线精确地表示二次曲线．     

Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.