红外耦合光学系统设计

红外目标模拟器由红外目标图像发生器和投影光学系统组成。该红外光学系统是一个要求与2个导引光学系统的光学技术参数相匹配的长焦距、大视场和具有像方远心光路的中红外光学系统。叙述用于红外目标模拟器的红外耦合光学系统的设计原理，提出它与导引光学系统一起可组成放大倍率M=4.5×的红外投影光学系统，并指出IR CRT产生的图像通过红外投影光学系统可成像在导引接收器上。针对给出的红外耦合光学系统的设计特点和技术要求，光学材料选取硅（Si） 锗（Ge） 硅（Si），采用简单的柯克三片式结构完成光学系统设计。设计评价结果表明，该系统的光学性能和成像质量均满足设计指标要求。     

Pulsed reactive crossed beam laser ablation of La0.6Ca0.4CoO3 using O: Where does the oxygen come from?

The composition of thin perovskite films, especially the oxygen content, is a crucial parameter which influences many physical properties, such as conductivity and catalytic activity. Films produced by pulsed laser deposition are normally annealed in an oxygen atmosphere after deposition to achieve a desired oxygen content. In pulsed reactive crossed beam laser ablation, no annealing step is necessary, but a fundamental question regarding this deposition technique is still open: where does the oxygen in the films come from?There are three possibilities, i.e. from the target, from the gas background, or from the gas pulse. To answer this question two experiments were performed: ¹⁸O₂ was used during the deposition process as background gas with ¹⁶O anions in the target and ¹⁶O₂ gas pulse, and a ¹⁸O₂ gas pulse with ¹⁶O from the target and background. These experiments revealed that the quantification of the oxygen origin is only possible, when no oxygen exchange occurs at the deposition temperature. The films are characterized after deposition by elastic recoil detection analysis (ERDA) to determine the ¹⁶O/¹⁸O ratio. Experiments with different oxidizing species in the gas pulse (N₂O and O₂) confirm that the oxidizing potential (N₂O > O₂) as well as the number of molecules are important.     

Propagation of the kurtosis parameter of Hermite-cosh-Gaussian beams

Starting from the propagation equation of Hermite-cosh-Gaussian (HChG) beams and the intensity moments definition, an analytical expression for the propagation of the kurtosis parameter of unapertured HChG beams passing through paraxial optical ABCD systems is derived and illustrated numerically. Special interesting cases are discussed, in particular, the kurtosis parameter of HChG beams at the waist plane is obtained readily from our general propagation expression.     

An improved injector bunching geometry for ATLAS

The bunching system of the ATLAS positive ion injector (PII) has been improved by relocating the harmonic buncher to a point significantly closer to the second stage sine-wave buncher and the injector LINAC. The longitudinal optics design has also been modified and now employs a virtual waist from the harmonic buncher feeding the second stage sine-wave buncher. This geometry improves the handling of space charge for high-current beams, significantly increases the capture fraction into the primary rf bucket and reduces the capture fraction of the unwanted parasitic rf bucket. Total capture and transport through the PII has been demonstrated as high as 80% of the injected dc beam while the population of the parasitic, unwanted rf bucket is typically less than 3% of the total transported beam. To remove this small residual parasitic component a new traveling-wave transmission-line chopper has been developed reducing both transverse and longitudinal emittance growth from the chopping process. This work was supported by the U.S. Department of Energy under contract W-31-109-ENG-38.     

Epitaxy: the motion picture

The engineering of many modern electronic devices demands control over a crystal down to the thickness of a single layer of atoms—and future demands will be even more challenging. Such control is achieved by the method of crystal growth known as epitaxy, and that makes this method the subject of intense study. More than that, recent advances are revolutionizing our knowledge of how surfaces grow. In fact, growing surfaces show a beautifully rich variety of phenomena, many of which are only now beginning to be uncovered. In the past few years many surface imaging techniques have been used to give us a close look at how crystals grow—while they are growing. The purpose of this article will be to illustrate some of the ways real surfaces grow and change as revealed by some of the latest in situ microscopic imaging technologies.

It is often said that crystal growth is more of an art than a science. Here we will show that it is emphatically both.     

HIRFL注入器PIG离子源的研制

本文介绍了兰州重离子加速器(HIRFL)的注入器(SFC)所用PIG离子源的研制和改进工作,使用新研制的PIG源,已在注人器SFC上获得了5μA的O_(16)~(5+)及10μA的C_(16)~(4+)的离子束。     

Fibonacci,Lucas序列与高阶Bernoulli多项式

本文给出了包含Ｆｉｂｏｎａｃｃｉ序列｛Ｆｎ｝、Ｌｕｃａｓ序列｛Ｌｎ｝及高阶Ｂｅｒｎｏｕｌｌｉ多项式Ｂｎ（Ｋ）（ｘ）的一些恒等式。     

电子直线加速器束流均方根发射度变化方程

本文导出了考虑外场和束流效应后束流均方根发射度平方变化方程的一般表达式,并就仅考虑外场,仅考虑空间电荷场和仅考虑尾场等三种特殊情况进行了分析。     

A high-current electron beam ion trap as an on-line charge breeder for the high precision mass measurement TITAN experiment

The precision of atomic mass measurements in a Penning trap is directly proportional to the charge state q of the ion and, hence, can be increased by using highly charged ions (HCI). For this reason, charge breeding with an electron beam ion trap (EBIT) is employed at TRIUMF’s Ion Trap for Atomic and Nuclear science (TITAN) on-line facility in Vancouver, Canada. By bombarding the injected and trapped singly charged ions with an intense beam of electrons, the charge state of the ions is rapidly increased inside the EBIT. To be compatible with the on-line requirements of short-lived isotopes, very high electron beam current densities are needed. The TITAN EBIT includes a 6 Tesla superconducting magnet and is designed to have electron beam currents and energies of up to 5 A and 60 keV, respectively. Once operational at full capacity, most species can be bred into a He-like configuration within tens of ms. Subsequently, the HCI are extracted, pass a Wien filter to reduce isobaric contamination, are cooled, and injected into a precision Penning trap for mass measurement. We will present the first results and current status of the TITAN EBIT, which has recently been moved to TRIUMF after assembly and commissioning at the Max-Planck-Institute (MPI) for Nuclear Physics in Heidelberg, Germany.     

厄米-双曲余弦-高斯光束的瞄准稳定性

用失调叠加积分的方法 ,对厄米双曲余弦高斯光束的瞄准稳定性作了研究 ,得到了厄米双曲余弦高斯光束失调因子 ηm2 的精确解析公式和近似解析公式 ,并用数值计算了相对横向偏移和相对角向偏移对失调因子ηm2 的影响以及对精确解析公式和近似解析公式的适用范围作了分析和说明。