Volumetric Properties of Binary Mixtures of Isomeric Butanols and C8 Solvents at 298.15 K

Excess molar volumes, V _m ^E, over the whole composition range for binary mixtures of 1-butanol, 2-butanol, and 2-methyl-2-propanol + 1-octanol, or 2-octanol, or di-n-butyl ether, or n-hexylacetate were determined at 298.15 K from density measurements carried out with a vibrating-tube densimeter. Small V _m ^E values, both positive and negative, are displayed by mixtures containing 1- or 2-octanol, whereas positive and larger values are always found for mixtures containing dibutyl ether and hexylacetate. These results can be justified in terms of H-bonding interactions and/or steric hindrance due to the branched alkyl chains. Partial molar volumes at infinite dilution of the isomeric butanols in the C8 compounds were also calculated from the apparent molar volumes in dilute solution. The solute-solvent interactions and the effects of the local organisation of the solvent around the butanol molecules were discussed using the void and cavity volumes as different estimates of the intrinsic volume of the molecules. The volumetric behavior of butanols seems to be determined by the solute-solvent interactions rather than packaging effects.     

(A19N7)[In4]2 (A = Ca,Sr) and (Ca4N)[In2]: Synthesis,Crystal Structures,Physical Properties,and Chemical Bonding

Single phase powders of (A₁₉N₇)[In₄]₂ (A = Ca, Sr) and (Ca₄N)[In₂] were prepared by reaction of melt beads of the metallic components with nitrogen. The crystal structure of (Ca₁₉N₇)[In₄]₂ was refined based on neutron and X‐ray powder diffraction data. The crystal structure of (Sr₁₉N₇)[In₄]₂ was solved from the X‐ray powder pattern. The structure refinements in combination with results from chemical analyses ascertain the compositions. The compounds (A₁₉N₇)[In₄]₂ (A = Ca, Sr) are isotypes of (Ca₁₉N₇)[Ag₄]₂; (Ca₁₉N₇)[In₄]₂ is probably identical to the earlier reported (Ca_18.5N₇)[In₄]₂. The crystal structure of the isotypes (A₁₉N₇)[In₄]₂ (A = Ca, Sr; cubic, , Ca: a = 1471.65(3) pm; Sr: a = 1561.0(1) pm) contains isolated [In₄] tetrahedra embedded in a framework of edge‐ and vertex‐sharing (A₆N) octahedra. Six of these octahedra are condensed by edge‐sharing around one central A²⁺ ion to form “superoctahedra” (A₁₉N₆) which are connected three‐dimensionally via further octahedra by corner‐sharing. The crystal structure of (Ca₄N)[In₂] (tetragonal, I4₁/amd, a = 491.14(4) pm, c = 2907.7(3) pm) consists of alternating layers of perovskite type slabs of vertex‐sharing octahedra (Ca₂Ca_4/2N) and parallel arranged infinite zigzag chains equation/tex2gif-stack-1.gif[In₂]. In the sense of Zintl‐type counting the compounds (A²⁺)₁₉(N^3?)₇[(In^2.125?)₄]₂ present an electron excess, (Ca²⁺)₄(N^3?)[(In^2.5?)₂] is electron deficient. Metallic properties are supported by electrical resistivity and magnetic susceptibility measurements. The analysis of the electronic structures gives evidence for the existence of homoatomic interactions In–In and significant heteroatomic metal–metal interactions Ca–In which favor the deviations of the title compounds from the (8 – N) rule.     

Inverse Perovskites (Eu3O)E with E = Sn,In – Preparation,Crystal Structures and Physical Properties

The cubic inverse Perovskites (Eu₃O)In and (Eu₃O)Sn were prepared from the metals and Eu₂O₃ or SnO₂, respectively. For (Eu₃O)In the crystal structure analysis was performed on single crystal X‐ray diffraction data (space group , a = 512.79(3) pm, Z = 1, R_gt(F) = 0.022, wR(F²) = 0.044). The data indicated full occupancy on all sites and a fully ordered structure. According to magnetic susceptibility measurements and X‐ray absorption spectroscopic data at the Eu L_III edge both compounds contain europium in the 4f⁷ (Eu²⁺) electronic state. (Eu₃O)In orders ferromagnetically at 185(5) K, (Eu₃O)Sn shows antiferromagnetic order at 31.4(2) K. Both compounds behave as metallic conductors in electrical resistivity measurements. However, (Eu₃O)In may be classified a metal, while (Eu₃O)Sn is more likely a heavily doped degenerated semiconductor or semimetal according to the absolute values of the resistivity.     

Preparation and Superconductivity of a Series of Bi2CaSr2-XBaxCu2O8+δ

By means of the addition of Ba into the Bi-Ca-Sr-Cu-O 2122 system, a series of Bi₂CaSr_2-xBa_xCu₂O_8+δ (0 ≤ × ≤ 2) quinary metal oxides were prepared by the citrate route and by the conventional powder reaction method. The samples prepared by the former method have better properties than the latter. It was found that 5 was not equal to zero for all of them and that it increased with decreasing Tc. Two phases were indentified in the oxides containing all five metal elements. One is the Bi-Ca-Sr-Cu-O 2122 phase, the other is a new insulating phase which probably contains Bi-Ca-Ba-Cu-O with undetermined stoichiometry. Superconductivity was found in those samples for which × ≤ 1.50 with their Tc onsets between 93–78 K by resistivity measurements. Superconductivity decreased monotonically with increasing x. However, residual resistance was found in those samples for which 1.00 ≤ × ≤ 1.50, The Meissner effect appears in the samples where × ≤ 1.00 with Tc onsets between 88–80 K. For x = 1.75 and 2.00, the samples were semiconductors with resistivities of 6.66 × 10² and 6.96 × 10³ Ω cm at 290 K, and activation energies of 0.109, and 0.298 eV, respectively.     

Optical and Electrical Properties of Polymerizing Plasmas and Their Correlation with DLC Film Properties

Diamond-like carbon (DLC) films were grown from radiofrequency plasmas of acetylene-argon mixtures, at different excitation powers, P. The effects of this parameter on the plasma potential, electron density, electron temperature, and plasma activity were investigated using a Langmuir probe. The mean electron temperature increased from about 0.5 to about 7.0 eV while the mean electron density decreased from about 1.2 × 10⁹ to about 0.2 × 10⁹ cm^–3 as P was increased from 25 to 150 W. Both the plasma potential and the plasma activity were found to increase with increasing P. Through actinometric optical emission spectrometry, the relative concentrations of CH, [CH], and H, [H], in the discharge were mapped as a function of the applied power. A rise in [H] and a fall in [CH] with increasing P were observed and are discussed in relation to the plasma characteristics and the subimplantation model. The optical properties of the films were calculated from ultraviolet-visible spectroscopic data; the surface resistivity was measured by the two-point probe method. The optical gap, E _G, and the surface resistivity, _s, fall with increasing P. E _G and _s are in the ranges of about 2.0–1.3 eV and 10¹⁴–10¹⁶ /, respectively. The plasma power also influences the film self-bias, V _b, via a linear dependence, and the effect of V _b on ion bombardment during growth is addressed together with variation in the relative densities of sp² and sp³ bonds in the films as determined by Raman spectroscopy.     

ZAO透明导电纳米薄膜中Al元素分布对其性能的影响

主要对直流反应磁控溅射法制备ZAO纳米薄膜中Al元素的相对含量进行了分析,对其作了EDS,XRD测试,并研究了Al质量分数与ZAO薄膜的光、电性能的关系·得出ZAO薄膜中成分是均匀的,具有ZnO晶体结构;Al元素的掺杂没有形成新的化合物(Al2O3),Al对Zn的掺杂替换是提高ZAO薄膜导电性能的关键因素,对薄膜在可见光区的透射性影响不大·制备的薄膜最低电阻率为4 5×10-4Ω·cm,可见光透射率达到80%以上·     

高密度电阻率法探测煤矿采空区灾害的可行性研究

针对煤矿开采后遗留下大量未做处理的地下采空区可能引起地质灾害这个问题,本文首先介绍了高密度电阻率法的工作原理及电阻率三维有限元正演模拟的方法,通过建立采空区模型,进行正演模拟进一步说明了利用高密度电阻率法对煤矿地下采空区探测是行之有效的方法。     

高密度电阻率法在探测多层采空区中的应用

介绍了高密度电阻率法的工作原理及野外工作方法,探讨了应用高密度电阻率方法探测多层采空区时应注意的问题,阐述了探测地下煤层多层采空区的具体步骤。     

地磁感应地电场时频变换快速计算方法

随着中国特高压输电线路的建设,中国电网建设遭受地磁感应电流(geomagnetically induced current, GIC)影响的风险将大大增加。基于大地电阻模型利用有限元计算地磁扰动感应地电场(geomagnetic disturbance, GMD)地电场的方法,建模复杂,利用有限元法计算感应地电场成本过高。地磁测深数据得到的视电阻率综合反映了大地的电性结构,现提出基于视电阻数据及地磁台实测数据直接计算GMD地磁感应地电场的方法。仿真实验表明,该方法可以极大缩短计算时间,减小计算成本,对中国电网应对地磁暴侵害提供了有效算法。计算结果表明地磁暴对各地地电场的影响不均匀,与当地的地质电性结构有很大的关系,同时南北走向的电网将产生更大的GIC,更易受到地磁暴的侵害,应作为主要的关注对象。     

水平电偶源频率域电磁测深全区视电阻率的直接算法

利用水平电偶源激发的电磁场，提出了直接精确计算全区视电阻率的方法．计算和分析结果表明，该方法的结果在远区等价于卡尼亚电阻率，在近区和过渡带则明显地改善了卡尼亚电阻率的非波区场畸变，从而能更好地接近基底的真电阻率，更形象地反映了地下介质的垂向电性变化．