乡镇企业如何应对入世的挑战与机遇

中国入世对乡镇企业来说，是挑战与机遇并存。在面对更加激烈的市场竞争的同时，也获得了走向世界、平等参与竞争、在竞争中不断发展壮大的良好机遇。问题的关键是乡镇企业要能充分认识形势，采取措施，抓住机遇应对挑战。     

Spectral line suppression and sideband narrowing via quantum interference

We reveal that for a realistic system, interference effects are obtained such as the suppression of central line and inner sidebands and the narrowing of the outer fluorescence sidebands. For this purpose, we consider a spontaneous decay from an excited state to a metastable state when the excited and metastable states are resonantly coupled to an auxiliary metastable state by a laser field and a microwave field, respectively. The fluorescence spectrum evolves from a five-peaked structure into a doublet of ultrasharp lines as the ratio of the laser field Rabi frequency to the microwave Rabi frequency is decreased. The physical origin is presented in terms of dressed states.     

堆焊切粒刀技术初探

介绍堆焊切粒刀的优点 ,着重探讨了采用靠模法加工堆焊切粒刀螺旋槽的原理 ,论证了所介绍加工工艺的合理性 .事实证明 ,采用介绍的加工工艺生产的堆焊切粒刀 ,可满足设计的技术性能 ,质量可达到国外同类产品的水平     

Linear and nonlinear optical susceptibilities of orthorhombic rare earth molybdates RE2(MoO4)3

The dielectric responses (i.e. the refractive indices and the second order nonlinear susceptibilities) of all orthorhombic rare earth molybdates have been studied on the basis of the relationship between dielectric responses and the average atomic number of constituent atoms of crystals. Both the linear and second order nonlinear optical responses at 1.064 μm decrease with increasing atomic number from La to Lu.     

Frequency dependence of ionic conductivity and dielectric relaxation studies in Na3H(SO4)2 single crystal

Electrical impedance measurements of Na₃H(SO₄)₂ were performed as a function of both temperature and frequency. The electrical conductivity and dielectric relaxation have been evaluated. The temperature dependence of electrical conductivity reveals that the sample crystals transformed to the fast ionic state in the high temperature phase. The dynamical disordering of hydrogen and sodium atoms and the orientation of SO₄ tetrahedra results in fast ionic conductivity. In addition to the proton conduction, the possibility of a Na⁺ contribution to the conductivity in the high temperature phase is proposed. The frequency dependence of AC conductivity is proportional to ω^s. The value of the exponent, s, lies between 0.85 and 0.46 in the room temperature phase, whereas it remains almost constant, 0.6, in the high-temperature phase. The dielectric dispersion is examined using the modulus formalism. An Arrhenius-type behavior is observed when the crystal undergoes the structural phase transition.     

Temperature and junction-type dependency of Andreev reflection in MgB2

We studied the voltage and temperature dependency of the dynamic conductance of normal metal-MgB₂ junctions obtained either with the point-contact technique (with Au and Pt tips) or by making Ag-paint spots on the surface of MgB₂ samples. The fit of the conductance curves with the generalized BTK model gives evidence of pure s-wave gap symmetry. The temperature dependency of the gap, measured in Ag-paint junctions (dirty limit), follows the standard BCS curve with 2Δ/k_BT_c=3.3. In out-of-plane, high-pressure point-contacts we obtained almost ideal Andreev reflection characteristics showing a single small s-wave gap Δ=2.6±0.2 meV (clean limit).     

Laguerre expansion on the Heisenberg group and Fourier-Bessel transform on C~n Dedicated to Professor Sheng GONG on the occasion of his 75th birthday

Given a principal value convolution on the Heisenberg group Hn = Cn×R, we study the relation between its Laguerre expansion and the Fourier-Bessel expansion of its limit on Cn. We also calculate the Dirichlet kernel for the Laguerre expansion on the group Hn.     

Surface morphology for ion-beam sputtered Al layer with varying sputtering conditions

We study the growth morphology of thin macrostructure films which is known to be largely affected by the deposition conditions as thin film nucleation and formation is dependent on the kinetic energy and chemical free energy of the atoms. The ion-beam sputtering technique used for depositing thin layers is due to the advantage over other techniques, e.g. the independent control of many process parameters, such as the pressure and/or the energy of the ion-beam and the substrate temperature. Therefore, the dependence of various sputtering parameters such as: (i) sputtering pressure and/or the rate of deposition and (ii) the effect of substrate temperature on the growth has been studied by depositing a single layer of Al. The variations show some interesting dependencies on the structural parameters for the Al layer deposited which has been understood in terms of thin film growth and nucleation theory.     

Vibrational dynamics of fullerene molecules adsorbed on metal surfaces studied with synchrotron infrared radiation

Infrared (IR) spectroscopy of chemisorbed C₆₀ on Ag (111), Au (110) and Cu (100) reveals that a non-IR-active mode becomes active upon adsorption, and that its frequency shifts proportionally with the charge transferred from the metal to the molecule by about 5 cm^-1 per electron. The temperature dependence of the frequency and the width of this IR feature have also been followed for C₆₀/Cu (100) and were found to agree well with a weak anharmonic coupling (dephasing) to a low-frequency mode, which we suggest to be the frustrated translational mode of the adsorbed molecules. Additionally, the adsorption is accompanied by a broadband reflectance change, which is interpreted as due to the scattering of conduction electrons of the metal surface by the adsorbate. The reflectance change allows determination of the friction coefficient of the C₆₀ molecules, which results in rather small values (∼2×10⁹ s^-1 for Ag and Au, and ∼1.6×10⁹ s^-1for Cu), consistent with a marked metallic character of the adsorbed molecules. Pre-dosing of alkali atoms onto the metal substrates drastically changes the IR spectra recorded during subsequent C₆₀ deposition: anti-absorption bands, as well as an increase of the broadband reflectance, occur and are interpreted as due to strong electron–phonon coupling with induced surface states. Received: 6 June 2001 / Accepted: 23 October 2001 / Published online: 3 April 2002     

An optodynamic method for the real-time determination of the depth of a laser-drilled hole

An experimental method for determining the real-time depth of laser-drilled holes is presented. The proposed method involves detecting the laser-induced optoacoustic waves generated during the interaction of the laser beam with the material. Our optodynamic study involved measuring the propagation times of these waves as they traveled through the material and analyzing their temporal behavior during the drilling process. The experimental observations revealed an exponential relationship between the propagation time of the longitudinal stress wave and the number of consecutive laser pulses. Received: 25 October 2001 / Accepted: 27 October 2001 / Published online: 20 December 2001