护环成型技术及质量控制的新进展

回顾了近年来在发电机护环各制造环节研究中所取得的主要成果,简要介绍了原材料冶炼、热成形制坯、强化性能三个关键工序攻关中取得的最新进展.针对当前生产中的难题和沿用工艺的缺点,开发的电渣熔铸坯料、包套冲挤(扩挤)热成形制坯新技术,能够解决热锻开裂、变形不均匀的难题,并可缩短工艺流程,提高产品质量与生产效益.研究的内增压或外增压液压胀形强化新方法,可以提高工艺过程的可控制性,并能扩大液压胀形的应用范围.     

硫化锌掺钴对电子结构和光学性质的影响

根据密度泛函理论对钴掺硫化锌周围的品格进行了结构优化,计算得到了钴杂质周围的晶体结构、电子态密度分布和吸收光谱.计算结果表明,由于Co原子掺入ZnS晶格常数减小,导致晶格畸变;带隙变窄;吸收峰展宽至更长波长区域.     

流动注射化学发光增强法测定酪氨酸

在Na2CO3-NaHCO3介质中,酪氨酸对Luminol-K3Fe(CN)6化学发光体系有很强的增敏作用.据此建立了流动注射化学发光增强法测定酪氨酸的方法.发光信号的增强值(ΔI)与酪氨酸的浓度在5.0×10-5～4.0×10-7mol/L的范围内呈良好的线性关系,检出限为1×10-7mol/L(S/N=3),对于1.0×10-6mol/L的酪氨酸测定相对标准偏差为2.4%(N=11).该法用于测定医用氨基酸注射液中的酪氨酸,结果令人满意.     

分段函数的分类及分离型分段函数与初等函数之间的关系

将分段函数划分为连结型分段函数 ,分离型分段函数和它们的组合形式三种类型 ,得到了分离型分段函数是初等函数的充分必要条件 ,完整地解决了分离型分段函数与初等函数之间的关系 ,并且给出了初等函数在其任一截取集上的限制函数 (截取函数 )仍然是初等函数的结果     

Synthesis and Crystal Structure of a Ternary Complex: [Ni(phen)2(pmal)]·8H2O

A new ternary complex [Ni(phen)(pmal)]·8H2O (phen = 1,10-phenanthroline,pmal2- = phenethyl malonic acid) has been synthesized by the reaction of nickel acetate, phen and phenethyl malonic acid. Elemental analysis, IR spectra and X-ray single-crystal diffraction were carried out to determine the composition and crystal structure. Crystal data for this complex: triclinic system, space group P1, a = 10.387(5), b = 13.112(6), c = 14.229(6) (A), α = 76.176(7), β =83.778(8), y = 71.770(6)°, C35H42N4O12Ni, Mr= 769.44, Z = 2, F(000) = 808, V = 1786.1 (A)3, Dc =1.431 g/cm3, μ = 0.612 mm-1, the final R = 0.0653 and wR = 0.1033 for 9379 (Rint = 0.0244)independent reflections and 4730 observed reflections (I ＞ 2σ(I)). Structural analysis shows that the coordination geometry of Ni(Ⅱ) is a distorted octahedron. A novel two-dimensional structure is constructed from (H2O)4 and (H2O)12 water clusters, and the complex forms a 3-D network supramolecular structure by hydrogen bonds and π-π stacking of neighboring phens.     

θ*r,s,t-图与唯一2-列表染色图的特征化

如果一个图G存在一个k-列表安排使得G具有一个唯一列表染色,则称 G是唯一列表可染色图,简称UkLC图．我们称图G具有M(k)性质当且仅当G不 是UkLC图．本文在借鉴θr,s,t-图概念的基础上引入θr,s,t-图的定义,并证明:除了 r=s=t=2以外,θr,s,t-图都是U2LC图．利用如上结果我们给出M．Mahdian and E．S．Mahmoodian对U2LC图所作特征化的一个简单证明．     

关于(QU)型模糊拓扑群的直积

研究(QU)型模糊拓扑群族直积,证明了任意(QU)型模糊拓扑群族的直积仍是(QU)型模糊拓扑群;研究了(QU)型模糊拓扑群族直积的模糊单位元之重域基的结构,得到了(QU)型模糊拓扑群族直积的一些重要性质.     

Vlookup( )函数在高校人事信息管理中的应用

本文探讨使用Vlookup( )函数在人事信息管理工作中实现不同电子表格间数据对接的基本方法和相关问题.通过在两个数据表中使用Vlookup( )函数进行数据查找与匹配的实例,证明使用该函数在进行不同数据库间的信息整合和交叉引用时能显著提高工作效率和准确性.     

Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

脂溶性酞菁钴(III)为载体的高选择性亚硝酸根PVC膜电极

以自制的4,4',4',4''-四特丁基酞菁钴(II)为原料合成二氯4,4',4',4''-四特丁基酞菁钴(III)。以此为载体制备PVC膜电极。该电极的电位选择性次序明显不同于Hofmeister次序, 其最佳 响应斜率为-52mV/pNO2^-, 线性范围为3×10^-^5～1×10^-^1mol.dm^-^3NaNO2。通过改变配合物轴向的配位阴离子, 用紫外-可见光谱法对电极的响应机理作了初步探讨。