Optical and Electronic Properties of InGaN／GaN Multi—Quantum—Wells Near—Ultraviolet Lighting—Emitting—Diodes Grown by Low—Pressure Metalorganic Vapour Phase Epitaxy

The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW) structure were grown by low-pressure metalorganic vapour phase epitaxy. The double crystal x-ray diffraction revealed a distinct second-order satellite peak. The near-ultraviolet InGaN/GaN MQW LEDs have been successfully fabricated to emit at 401.2nm with narrow FWHM of 14.3nm and the forward voltage of 3.6 V at 20 mA injection current at room temperature. With increasing forward current from l 0 mA to 50 mA, the redshift of the peak wavelength was observed due to the band-gap narrowing caused by heat generation.     

Extraction and verification of coherent structures in near-wall turbulence

According to the characteristics of coherent structures in near-wall turbulence, an accurate extraction and verification method is developed based on wavelet transform (WT) and correlation analysis in this paper. At first, the fluid field of a turbulent boundary layer is measured precisely in a gravitational low-speed water tunnel. On the basis of the distribution of the coherent structures, velocity data of three test points are selected and analyzed, whose dimensionless heights are 20.8, 33.5, and 42.6. According to the frequency range of power spectrum density (PSD), coherent and incoherent structures are both extracted from the original signals using continuous and orthogonal wavelet transforms. To confirm the validity of the extracted signals, the probability density function (PDF) of each extracted signal is calculated. The result demonstrates that the incoherent structures obey the Gaussian distribution, while the coherent structures deviate from the Gaussian distribution. The PDFs of the coherent structures and the original signals are similar, which shows that the coherent structures make most contributions to the turbulence. For further verification, a correlation parameter between coherent and incoherent structures is defined, which evidently proves the validity of the extraction method in this paper.     

几何光学教学中关于变折射率材料问题的计算实例

针对大学光学课程中所讨论的成像问题均为近轴近似这一情形,指出为增强教学效果、提升学生对所学理论在实践上的信心,需对非近轴近似的一般化情形给予一定讨论;明确了直接从费马原理反解折射率变化规律的不可行性,采用近似办法,将变折射率的泛函问题转化为关于斜率的一维函数问题,利用欧拉方程进行分析,通过数值计算得出适合于材料制作的一组参考参数.     

江汉以濯之秋阳以曝之——纪念我的父亲钱临照

父亲生于20世纪初(1906年),到他去世(1999年),他几乎走过了整整一个世纪.这是一个中国近代科学萌芽、发展、壮大的世纪;这是一个中国从受到列强欺侮,国内战乱到解放后迎来了科学春天的世纪.父亲和老一辈的科学家们经过了艰苦卓绝的奋斗,终于在这一个世纪中为我国科教事业的高速发展奠定了坚实的基础.     

重力场与静电场特点的比较

“场”是一种客观存在的物质，但由于“场”具有不易直接感受的特殊存在形态，同学们对“场”的物质性的理解不够深刻，解决“场”的相关问题时也感到棘手．笔者就高中阶段最典型的两种场——“重力场”和“静电场”的力学性质与能量特点进行比较，使同学们对“场”的概念有更深刻的认识．     

近失速工况下叶顶间隙对后置蜗壳斜流叶轮进出口流场影响的实验研究

本文使用５孔探针,在近失速工况下,对３种不同叶顶间隙时的后置蜗壳斜流叶轮进出口流场三维速度分布进行了测量,并将实验结果与非失速小流量的出口流场做了比较。     

频率-电流扫描3ω法表征纳米薄膜界面热阻

纳米薄膜与基体之间的界面热输运是MEMS系统热管理和热设计的热点和难点。建立了频率扫描3ω法的热阻抗网络模型。利用频率-电流扫描3ω法和不同厚度薄膜试样得到单层纳米薄膜与基体之间的界面热阻。ZrO_2、SiO_2增透膜与基体之间的界面热阻分别为0.108 m~2·K·MW~(-1)和0.066 m~2·K·MW~(-1)。发现界面热阻与扫描频率无关,未发现界面热阻随膜厚变化的尺度效应。实验和理论分析表明,声子近界面效应在增透膜和基体界面的热输运过程中起主导作用。     

怀念恩师张公数事

新中国成立后,为了大力发展教育事业,各地纷纷新建师范学院,主要师资队伍由各地中学的优秀教师中抽调组成。一则人数有限,二则多为中年以上,很难全局胜任当年师范院校与综合性大学的课程设置和采用教材基本相同的重任,所以必须大力培养中青年骨干师资队伍。     

圆形球面虚共焦非稳腔的三维数值研究

 通过对1/2共焦腔和稳定腔的计算,考查了同三维菲涅耳积分方程相应的C 8程序的可靠性。对激光在三维圆形球面虚共焦非稳腔中的传输作了计算和分析。取相同的远场传输距离且放大率由大变小时，强度分布由近场的投影分布逐渐趋于远场的高斯、超高斯分布。     

矩阵在几何光学中的应用

本文中介绍了适用于几何光学中近轴光线的矩阵方法