Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

Influences of Thalliation on the Morphology and Critical Temperature of Tl2Ba2CaCu2O8 Thin Films

Tl2Ba2CaCu2Ox(Tl-2212) thin films were prepared by the two-step technique.A precursor film was first prepared by the pulsed laser deposition method,and then experienced the incorporation of thalliation in a one-step or two-step annealing process.The experimental results show that the two-step annealing process produces dense and smooth films,and that the one-step annealing process produces a high critical temperature film of 101K,but the transition width is wide.Precursor films with homogeneous Ba2Ca1.3Cu2.1Ox composition are essential for producing high-quality Tl-2212 films.     

Identical Superdeformed Bands in ^171Ta and ^173Re

The rotational band built on the i13/2 proton [660,1/2] Nilsson state in ^173Re is proven to be identical to that in ^171Ta.The close similarity of the two bands in ^171Ta and ^173Re suggests that the ^173Re nucleus with the odd proton based on the i13/2 [660,1/2] Nilsson state may be triaxially superdeformed.     

原子结构中的物理理论

本文较系统地介绍了有关原子结构方面的一些基础理论,由定性到定量,并应用量子力学知识描绘了原子结构状态。     

中国科学院超快现象和太赫兹辐射学术研讨会简讯

“中国科学院超快现象和太赫兹辐射学术研讨会”于 2 0 0 2年 7月 2 2日至 2 5日在北京中国科学院物理研究所举行 .本次会议由中国科学院主办 ,中国科学院物理研究所承办 ,中国科学院上海微系统与信息技术研究所、美国伦斯勒理工学院共同协办 .会议的三位主席分别是物理所张杰研究员、美国伦斯勒理工学院的张希成教授和上海微系统与信息技术研究所的封松林研究员 .物理所的翁羽翔研究员担任会议秘书长 .这次大会是我国在超快现象和太赫兹辐射领域组织的第一次专业学术会议 ,是对国内在超快现象和太赫兹辐射领域研究水平的一次较全面的检阅 .…     

相对论平均场理论对196Pb超形变态的研究

在形变约束的相对论平均场理论框架下, 用TMA, PK1, NL3和NL-SH相互作用对¹⁹⁶Pb的超形变态进行了系统研究. 给出了¹⁹⁶Pb的位能曲线、基态和超形变态的形变以及超形变态退激的激发能. ¹⁹⁶Pb的基态为β₂≈－0.15的扁椭球, 超形变激发态为β₂≈0.60的长椭球, 激发能在4－5MeV之间, 势阱深度在1－2.2MeV之间. 这些结果与最近观测的实验数据符合得非常好, 表明相对论平均场理论能够较好地描述¹⁹⁶Pb超形变转动带带首的能量.     

Transmission Properties of THz Radiation Pulses through Very Deep Zero-Order Metallic Gratings

Very deep zero-order metallic grating structures are processed to study the transmission properties of THz radiation pulses. The experiments have been performed with two samples. The delay of the THz pulses and the corresponding resonantly enhanced transmission spectra through the samples are observed. To explain the extraordinary transmission we have treated the samples as Fabry-Perot resonators through resonant excitation of the coupled surface plasmon polaritons filled in the cavities between the metal slats. The experimental results are in reasonable agreement with the numerical simulation. Our results show that THz-time-domain spectroscopy may be an effective technique for studying the optical properties of various THz microstructured devices.     

纳米PIC-I分子聚集体的超辐射和Z-扫描研究

分子聚集体在非线性光学和集成光学等领域有潜在的应用前景。纳米结构一维染料分子J—聚集体有许多既不同于单个分子又不同于体材料的奇异性质，即超辐射和巨光学非线性。这种超辐射是由于在几个本征态内振于强度结合在一起，得到一巨跃迁偶极于，因而是超辐射的。跃迁速率与耦合分子个数N成正比。分子聚集体的J—吸收和超辐射发射是共振的。利用Z—扫描技术测量PIC在不同配比下的非线性折射率、非线性吸收系数和非线性极化率。观测到随着链长变短，样品的三阶非线性极化率增大。对这种非线性增强的机制进行了分析和讨论。     

局部有限超拓扑的局部紧性

本文讨论了赋予局部有限拓扑的非空闲子集超空间的局部紧性.主要结果是:X正则,则其闭子集超空间局部紧当且仅当X可表示成一个紧空间与一个离散空间的拓扑和.