基于系统随机变动的时间缓冲设置方法

为了最大化瓶颈工站的利用率,在获得较高系统产能（TH）的同时得到一个合理的制造周期（CT）,构建了一种确定半导体晶圆制造系统中瓶颈工站前合适的时间缓冲的启发式算法.首先,根据排队理论及系统随机变动特性,提出了G/G/m排队网络模型.其次,根据瓶颈工站多重入特性,对时间缓冲进行分解.在此基础上,提出了一种确定合适时间缓冲的启发式算法.最后,根据时间缓冲,提出投料策略,并对算法进行仿真实验.结果表明,所提出的算法是有效可行的.     

Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate

The double-side Tl2Ba2 CaCu2O8 （Tl-2212） superconducting thin films were fabricated on CeO2 buffered sapphire substrates. The reactive magnetron sputtering technique was used to grow CeO2 buffer thin films on sapphire substrates. Making use of the metal cerium as a sputtering source, the depositing rate is much higher compared with the CeO2 target. The Ti-2212 thin films on CeO2 buffered sapphire substrates were fabricated by adc magnetron sputtering and post-annealing process. The x-ray diffraction indicates that the thin film is pure Tl-2212 phase with the e-axis perpendicular to the substrate surfaces, and epitaxially grown on the CeO2 buffered sapphire. The critical transition temperature Tc is around 106K, the critical current density Jc is around 3.5 MA/cm^2 at 77K, and the microwave surface resistance R8 at 77K and 10 CHz of the film is as low as 390μ Ω.     

Highly Efficient Simplified Organic Light-Emitting Diodes Utilizing F4-TCNQ as an Anode Buffer Layer

We demonstrate that the electroluminescent performances of organic light-emitting diodes （OLEDs） are significantly improved by evaporating a thin F4-TCNQ film as an anode buffer layer on the ITO anode. The optimum Alq3-based OLEDs with F4-TCNQ buffer layer exhibit a lower turn-on voltage of 2.6 V, a higher brightness of 39820cd/m^2 at 13 V, and a higher current efficiency of 5.96cd/A at 6 V, which are obviously superior to those of the conventional device （turn-on voltage of 4.1 V, brightness of 18230cd/m^2 at 13 V, and maximum current efficiency of 2.74calla at 10 V）. Furthermore, the buffered devices with F4-TCNQ as the buffer layer could not only increase the efficiency but also simplify the fabrication process compared with the p-doped devices in which F4-TCNQ is doped into β-NPB as p-HTL （3.11 cd/A at 7 V）. The reason why the current efficiency of the p-doped devices is lower than that of the buffered devices is analyzed based on the concept of doping, the measurement of absorption and photoluminescence spectra of the organic materials, and the current density-voltage characteristics of the corresponding hole-only devices.     

不同鞋底硬度对跑步时下肢生物力学特征的影响

运动鞋鞋底硬度会影响缓冲性能和保护作用,进而影响穿着者的运动表现。通过分析9名跑者分别穿着7种不同鞋底硬度运动鞋跑步时下肢运动学和动力学指标的变化,探析鞋底硬度对鞋缓冲性能和防损伤性能的影响,为运动鞋的设计与制作提供理论依据。结果表明:随着鞋底硬度的增加,跑步着地时足外翻和外旋的程度增大,进而增加损伤几率。足着地时的垂直地面反作用力第一峰值力不受鞋底硬度的影响。30°和40°是较理想的鞋底硬度,缓冲效果较好,同时可以降低足部过度运动的风险。     

几类变权强化缓冲算子的构造研究

基于最基本的缓冲算子x(k)d=(x(k)²)/(px(k)+(1-p)x(n))变形,获得了几类范围大大拓宽的适用缓冲算子的构造方法,讨论了缓冲算子的内在联系,研究了缓冲算子调节度与可变权重之间的关系,解决了传统缓冲算子作用强度过强或过弱的问题.最后通过实例验证了变权缓冲算子的有效性和优越性.     

南宁市酸雨影响因素分析

根据南宁市环保监测站的酸雨监测资料和南宁市气象局的气象观测资料,分析南宁市本地污染源排放、大气颗粒物缓冲能力、大气中H2O2含量以及气象因素对南宁市酸雨的影响,提出南宁市的自然地理环境和气象气候条件有利于酸雨的形成,其形成与冷空气关系密切;影响南宁市的大气环流主要是东路、中路冷空气,这两股冷空气南下时容易形成酸雨且降水酸性明显增强。南宁市的酸雨受外来的影响非常明显。     

YBa2Cu3O7-x涂层导体的外延生长和性能对CeO2缓冲层的依赖性

利用倾斜衬底沉积法在无织构的金属衬底上生长了MgO双轴织构的模板层,在这一模板层上实现了YBa₂Cu₃O_7-x薄膜的外延生长.在外延YBa₂Cu₃O_7-x薄膜前,依次沉积了钇稳定的立方氧化锆和CeO₂作为缓冲层.利用X射线衍射2θ扫描、扫描、Ω扫描和极图分析测定了这些膜的结构和双轴织 关键词： 2Cu₃O_7-x镀膜导体')" href="#">YBa₂Cu₃O_7-x镀膜导体 2缓冲层')" href="#">CeO₂缓冲层 厚度依赖性 外延生长     

可调式液压缸缓冲装置设计及其缓冲过程研究①

液压缸的液压缓冲装置在缓冲过程中大多存在脉冲压力较高或制造过程复杂、成本高的问题,而且耐冲击范围有限,在实际使用过程中存在一定的局限性。利用气体的压缩特性设计的液压缓冲装置可以有效地解决缓冲过程中的脉冲冲击现象,而且结构简单,制造成本低,使用范围广泛,可以应用于大部分液压缸的使用场景。