[Na(18-C-6)]2[Cu(i-mnt)2]的合成与结构分析

研究了18-冠-6与Na2[Cu(i-mnt)2][i-mnt=异丁二腈烯二硫醇阴离子,S2CC(CN)2-2]的反应,得到的配合物[Na(18-C-6)]2[Cu(i-mnt)2](1)通过元素分析、红外光谱、X射线单晶衍射进行了结构分析.配合物为单斜晶系,空间群P2(1)/c.晶体学结构数据a=1.2819(11),b=1.1793(10),c=1.4928(13)nm,β=99.121(16)°,V=2.228(3)nm3,Z=2,Dcaled.=1.369g/cm3,F(000)=958,R1=0.0521,wR2=0.1003.1中的[Cu(i-mnt)2]基团通过配体i-mnt的氮原子与两个[Na(18-C-6)]基团中的钠原子成键,形成稳定的中性配合物.     

砖混结构住宅楼墙体裂缝的控制及预防

住宅建设中，砖混结构为主的现象极为普遍，但作为质量通病之一，墙体裂缝却会时常产生。细小的裂缝不易被人重视，不影响使用，但却会降低建筑物的抗震能力。当地震发生时，会引起墙体破坏、坍塌，是一种不安全隐患，必须重视解决，本文就裂缝产生的原因，采取切实可行的措施，预防控制裂缝、浅谈了自己的看法。     

CPI趋势测定与分析

近期,居民消费价格指数(CPI)呈线性增长态势,形成通胀压力.经过建立数学模型测定,以及定性分析对定量分析结果的修正,可以预见,CPI增幅将会突破5%,且今后一段时期内,CPI仍会处在增幅5%以上的高位波动,通胀压力仍然存在,但CPI的上升空间有限.     

节能建筑设计技术研究

随着我国建设节约型社会战略构想的提出，作为能源消耗相对集中，能效比相对较低的建筑，建筑节能成为当前迫切需要解决的热点问题。本文从建筑设计的角度，阐述了建筑物保温隔热的基本原理，同时分析了钢筋混凝土的弊端。     

高层建筑转换结构施工技术研究

本文初步分析了转换层结构施工特点的基础上,对转换层结构施工技术的控制药店进行了简要地分析,同时对模板工程和临时支撑工程的施工进行了一定的探讨。     

浅议建筑结构设计中的概念设计

简述了概念设计的特点,并分析了概念设计与结构设计的区别,阐述了概念设计的重要性。     

科技英语翻译技巧

本文主要阐述了科技英语的翻译技巧以及应遵循的准则。     

桥涵结构砼外观质量处理方法

公路工程建设离不开砼.以前我们给予过多关注的是砼的强度,即砼的耐久性能,但是,在对质量精益求精的今天,砼的外观质量成了公路工程技术人员广泛讨论的话题.今天的砼,不仅仅要求"内实",而且还要求"外美".本文从实践操作经验出发,就如何保证桥涵结构砼质量问题提出了自己的看法.     

Origin of the 420 nm Absorption Band and Effect of Doping Fluorine in PbWO4 Crystals

The electronic structures for three types of PbW04 (PWO) crystals, the perfect PWO, the PWO containing lead vacancy (PWO-Vpb) and fluorine doped PWO crystal (F^-：PWO), are systematically studied within the framework of density functional theory. The computational results show that the Pb 6s state situates below the valence band so that Pb^2 ions are unable to trap holes forming Pb^3 or Pb^4 to compensate for VPb^2-. The hole-trappers in PWO-Vpb are O^2- ions. Two of the longer-bond O^2- ions share a hole forming O2^3-, and four of the longer-bond oxygen ions trap two holes forming an associated color centre [O2^3--Vpb-O2^3-], which may be the origin of the 42Onto absorption band. It is also concluded that the doping of F^- would reduce the band gap and F^- ions substituting for O^2- can effectively restrict the formation of [O2^3--Vpb-O2^3-] and weaken the 42Onm absorption band and hence enhance the scintillation property of PWO.     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.