用于电磁驱动实验装置CQ-7的多间隙气体开关

基于电磁驱动实验装置CQ-7研制需求,设计了一套6间隙气体开关,开关高131 mm,直径108 mm,总间隙36 mm,开关电感约40 nH。采用模拟软件Ansoft Maxwell计算分析开关电场强度分布,电场分布较均匀,不均匀系数为1.14。开展了开关放电特性研究,充电100 kV条件下,开关放电电流峰值可达70 kA,放电延时约35 ns,抖动3 ns。根据开关自击穿电压值,采用正态分析开关自击穿概率,开关80%安全系数下,自放电概率小于10-4。该开关满足CQ-7实验装置研制需求。     

多倍脉宽输出的螺旋重入脉冲形成线

提出了一种螺旋线重入结构的脉冲形成线,可实现多倍脉宽输出。该结构由储能外线和重入内线组成;重入内线的外屏蔽圆筒内表面呈阶梯状,内筒为均匀螺旋线结构,实现简单;储能外线与Tesla变压器一体化。结合采用螺旋重入和二级重入结构,给出了一组10 GW功率、百ns脉宽的重入型脉冲形成线设计,形成线采用Midel 7131合成酯绝缘介质,外筒内径1 m,长度2 m。     

检测网络变压器中限幅器焊接状态的方法

文章介绍了用高频中功率三极管和升压变压器组成的幅度达到140V的脉冲对网络变压器中限幅器焊接状态进行检测的方法。     

Electrical Property of Infrared-Sensitive InAs Solar Cells

InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p？n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.     

Highly Efficient Simplified Organic Light-Emitting Diodes Utilizing F4-TCNQ as an Anode Buffer Layer

We demonstrate that the electroluminescent performances of organic light-emitting diodes （OLEDs） are significantly improved by evaporating a thin F4-TCNQ film as an anode buffer layer on the ITO anode. The optimum Alq3-based OLEDs with F4-TCNQ buffer layer exhibit a lower turn-on voltage of 2.6 V, a higher brightness of 39820cd/m^2 at 13 V, and a higher current efficiency of 5.96cd/A at 6 V, which are obviously superior to those of the conventional device （turn-on voltage of 4.1 V, brightness of 18230cd/m^2 at 13 V, and maximum current efficiency of 2.74calla at 10 V）. Furthermore, the buffered devices with F4-TCNQ as the buffer layer could not only increase the efficiency but also simplify the fabrication process compared with the p-doped devices in which F4-TCNQ is doped into β-NPB as p-HTL （3.11 cd/A at 7 V）. The reason why the current efficiency of the p-doped devices is lower than that of the buffered devices is analyzed based on the concept of doping, the measurement of absorption and photoluminescence spectra of the organic materials, and the current density-voltage characteristics of the corresponding hole-only devices.     

低栅极电压控制下带有phenyltrimethoxysilane单分子自组装层的有机薄膜晶体管场效应特性研究

制作了底栅极顶接触有机薄膜晶体管器件,60 nm的pentacene被用作有源层,120 nm热生长的SiO₂作为栅极绝缘层.通过采用不同自组装修饰材料对器件的有源层与栅极绝缘层之间的界面进行修饰,如octadecyltrichlorosilane （OTS）,phenyltrimethoxysilane （PhTMS）,来比较界面修饰层对器件性能的影响.同时对带有PhTMS修饰层的OTFTs器件低栅极电压调制下的场效应行为及其载流子的传输机理进行研究.结果得到,当|V 关键词： 有机薄膜晶体管 自组装单分子层 场效应迁移率 低栅极调制电压     

非平衡电桥的输出特性研究

研究了非平衡电桥的工作原理和输出特性,利用自组的实验装置进行了测量.     

利用DIS传感器研究通断电自感现象

将DIS传感器应用到通断电自感演示实验中,可直接测量出小灯泡的电流和电压曲线,使学生可以定量的观察实验现象,加深对其对自感现明的理解.     

混沌电路电容参数的选择优化

通过测试蔡氏电路中关键元件的电压特性关系,给出了混沌电路稳定出现八倍周期分岔现象时电路对元件性能的要求. 实验发现相移电容的电压稳定性是实验的关键.     

基于迭代修正的液晶相控阵激光雷达波控数据获取

分析了影响液晶相控阵波控数据获取的几个关键因素,在此基础上通过计算期望相位面与实际相位面的相位差,提出一种基于迭代修正的波控数据获取方法,该方法可通过改变加载在液晶阵列上的参考电压或改变参考相位面实现。讨论了算法关键参数的选择。通过仿真进一步研究了液晶特性曲线范围和高斯初始相位对波控数据获取的影响。仿真结果表明:该方法能获得比较准确的波控数据;液晶特性曲线范围对波控数据的准确获取非常重要,当曲线范围较大时,液晶相控阵可补偿高斯光束引入相位的影响。