第三类磁点群的Molien函数

本文把Landau连续结构相变对称理论中的Molien函数计算公式推广到磁群共表示情形,导出了所有第三类(共58个)Shubnikov磁点群的Molien函数,这些函数可以直接应用于连续磁相变的对称理论。     

力矩导纳的测量

本文介绍了力矩导纳的直接测量技术并着重讨论了一个由两个磁致伸缩棒构成的力矩激励器的构造和特性。     

抗坏血酸同顺磁离子Mn~(2+)、Gd~(3+)络会的~(13)C NMR研究

该文用顺磁离子对其近邻~(13)C核的NMR吸收增宽效应,系统地研究了抗坏血酸在不同溶剂中对金属离子Mn~(2+)、Gd~(3+)的配合行为.在水溶液中,抗坏血酸可通过两种配合方式与Mn~(2+)作用,但与Gd~(3+)的作用只有一种稳定的结构.在水中抗坏血酸对金属的配位活性部位分别是1位羟基氧,3位离解的羟基氧和6位羟基氧.在DMSO中,3位羟基由于H~+对该基团的静电遮蔽而变得对金属离子Mn~(2+)表现为配位惰性,同时6位羟基配位活性较大增强.对Gd~(3+)来说,此时没有优势配位活性部位存在.文章还讨论了抗坏血酸在H_2O-DMSO混合溶剂中的~(13)C NMR谱及在DMSO中NaOH对其~(13)C NMR谱及其与金属络合结构的影响.     

磁场中载流线圈力和力矩的公式

本文给出计算载流线圈在外磁场中所受力和力矩的普遍公式.     

Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

Effect of Magnetic Field and Equilibrium Flow on Rayleigh-Taylor Instability

We investigate the effect of a finite equilibrium flow and magnetic field on the Rayleigh-Taylor instability. It is found that the equilibrium flow only makes a frequency shift of perturbation and the growth rate of the Rayleigh-Taylor instability remains unchanged. However, the magnetic field can change the growth rate and, in particular,a very strong magnetic field suppresses the growth rate.     

硬盘驱动器巨磁电阻(GMR)磁头:从微米到纳米

近年来电脑硬盘存储密度的飞速增长(年增长100％)已超出摩尔定律的预言．这种惊人的高速增长中，最关键的因素是自旋阀纳米多层膜结构，即巨磁电阻(GMR)读传感器磁头的应用．事实上，巨磁电阻磁头读传感器(reader sensor)已经实现由微电子器件向纳米电子器件转化，并且形成大规模产业．这一过程包含了自旋电子学、材料科学、微电子工程学、化学、微机械力学和工程学等诸学科和相关微加工技术综合性挑战极限，进入纳米科技领域实质性进步．