Efficient Visible Electroluminescence from Porous Silicon Diodes Passivated by Carbon Films

By using n-butylamine as a carbon resource,carbon film is deposited on the p-n porous silicon (PS) surface with a radio-frequency glow discharge plasma system.Raman spectra and infrared reflection (IR) spectra of the carbon films indicate that there are amine-group and hydrogen atoms therein.The IR spectra of the passivated PS samples exhibit that the PS surfaces are mainly covered with Si-C,Si-N and Si-O bonds.Electroluminescence (EL) spectra show that the EL intensity of the passivated PS diodes increases greatly and the blueshift of the EL peak occurs compared with the diodes without treatment.Both of these are stable while the passivated diodes are exposed to the air indoors.The I-V characteristics reveal that the passivated diodes have a smaller series resistance and a lower onset voltage.The influence of the carbon film passivation on EL properties of PS has also been discussed.The results have proven that carbon film passivation is a good way to enhance the PS luminescent intensity and stability.     

Photoluminescence Characterization of Silicon Nanoparticles Hybridized Europium Complex

A europium complex Eu (DBM)3 TPPO (Eu tris(benzoylmethide)-(triphenylphosphine oxide)) and silicon nanoparticles have been hybridized.The hybridization can evidently change the photoluminescence (PL) characteristics of the Eu complex in the following aspects:under an excitation of 390nm,the intensity of the PL peak at 611nm due to the ^5Du-^7F2 transition of the Eu^3 ions has been increased by 30%,and thc integrated PL intensity in the visible range has been increased by nearly 3 times;the PL excitation efficiency beyond 440nm has been improved cvidently;the peak in the PL excitation spectrum shifts from 408nm to 388nm,and the PL decay time decreases from 2.07 to 0.96μs,The experimental results indicatde that in the PL process,the photoexcited energy may transfer from the silicon nanoparticlcs to the Eu^3 ions.     

类锂硅离子软X射线激光研究

在激光等离子体典型参数条件下，利用碰撞－辐模型计算了类锂硅离子５ｆ－３ｄ和４ｆ－３ｄ跃的粒子数反转比率和激光增益系数。讨论了不同热带条件和不同冷却速度下，激光增益系统数的变化。计算结果表明，高功率，短脉冲激光生产的高温等离子体在快速冷却条件下能产生软Ｘ射的线激光增益。     

多孔硅制备过程中B,P杂质原子的作用

采用DV-Xα方法对多孔硅形成过程中位于表层的B和P杂质原子的作用进行研究,结果表明位于顶层硅原子层中的B和P杂质原子均可削弱其邻近的Si-Si键强度,因而可能导致出现腐蚀的突破点,再通过分析杂质对表面区势场的改变,可以认为位于顶层硅原子层中的B杂质原子产生腐蚀的突破点的可能性更大。 关键词：     

奥氏体-贝氏体复相组织形态的研究

在60Si2MnA钢等温淬火工艺和性能研究的基础上,用MEF-3型金相显微镜和JEM-200CX型透射电子显微镜对等温转变产物的组织形态进行了观察研究。并用Rigku D/maxⅢB型X-射线衍射仪测定了样品的残余奥氏体体积分数。实验结果表明,奥氏体-贝氏体复相组织强韧性好的原因在于含有一定数量的残余奥氏体和变态贝氏体组织,且贝氏作为无碳化物贝氏体。     

纳米硅薄膜光吸收谱的研究

用恒定光电导法测量了纳米硅(其晶粒尺寸为3-5nm,晶态成分比X_c为45％—50％)薄膜在0.9—2.5eV范围的光吸收谱。分析了在不同光子能量范围可能存在的对光电导作主要贡献的几种光跃迁过程,以及随着X_c的增加,材料由非晶、微晶转变为纳米硅薄膜时光吸收谱的变化。发现纳米硅晶粒之间的界面区(平均厚度约为1nm)中载流子的跃迁及传输过程对整个范围的光吸收谱起主导作用。联系纳米硅的这种特殊结构解释了有关实验结果。 关键词：     

应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.     

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Patterned silicon nanocrystallite (SINC) films were fabricated on (100) orientation p-type boron-doped sificon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm^2 was obtained. The emission current density from the SiNC films reached 1mA/cm^2 under a bias field of about 9.1V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for fiat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.     

First-Principles Study on the Electronic Structures for Y^3＋：PbWO4 Crystals

The possible defect models of Y^3＋：PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3＋ ions are studied by using the general utility lattice program （GULP）. The calculated results indicate that in the lightly doped Y^3＋ ：PWO crystal, the main compensating mechanism is [2Ypb^＋ ＋ VPb^2-], and in the heavily doped Y^3＋ ：PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^＋, forming defect clusters of [2Ypb^＋ ＋Oi^2-] in the crystal. The electronic structures of Y3＋ ：PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.