高场强下金属化膜电容器绝缘电阻特性

分析了高电场强度下金属化膜电容器绝缘电阻的特点,得出高电场强度下金属化膜电容器绝缘电阻是电容器介质膜泄漏和自愈过程的综合反映。针对高场强下的应用条件提出一种金属化膜电容器绝缘电阻的测试方法,并对高场强下电容器的绝缘电阻进行测试。测试结果表明:在300~400 V/m工作场强范围内金属化膜电容器绝缘电阻随工作场强增大会急剧减小,由于自愈的作用,绝缘电阻下降幅度随场强增加会逐渐变缓;在20~50 ℃工作温度范围内,金属化膜电容器绝缘电阻随温度升高会急剧减小,同样由于自愈的作用,绝缘电阻下降幅度随温度增高会逐渐变缓。分析得出,高温高场强下金属化膜电容器介质膜泄漏将会导致电容器电压出现明显下降,影响电容器和脉冲功率系统的储能效率。     

长间隙真空触发开关导通特性

基于真空触发开关的导通机理,设计了长间隙真空触发开关导通特性的实验方案。根据高速摄像图片讨论了长间隙真空触发开关的导通过程和影响导通特性的因素。通过实验得到了触发电流对间隙脉冲电流的影响规律:采用上升时间较短且峰值较高的触发电流,能够明显降低主间隙的火花电阻和导通延时,验证了对导通过程的理论预测。     

电阻式核磁共振测量的最新进展

电阻式核磁共振(RDNMR)测量是1988年由德国马普所的von Klitzing研究小组针对GaAs二维电子气中少量核自旋的探测而提出的一种具有超高灵敏度的实验技术. 目前, RDNMR已经成为研究单层或双层GaAs二维电子气核自旋和电子自旋特性的重要手段. 由于为实现电阻式核磁共振测量所建立的动态核极化方法强烈依赖于GaAs特有的材料属性, 至今这一技术一直没有扩展应用到其他半导体低维系统中. 最近,本研究小组发展了一种动态核极化新方法,成功实现了对典型窄带半导体锑化铟(InSb) 二维电子气的电阻式核磁共振测量.本文在介绍电阻式核磁共振测量工作原理及已建立的典型动态核极化方法的基础上,着重讨论所提出的动态核极化新方法的机理、 实验结果以及对今后研究的展望.     

Unusual Transport Properties near the Insulator-Metal Transition in Colossal Magnetoresistive Manganites

It is argued that a combination of the Griffiths theory and the double-exchange mechanism predicts the random distribution of ferromagnetic metallic clusters above the Curie temperature TC in colossal magnetoresistive manganites. Along this line, we propose a model for the temperature dependence of resistivity that yields a quantitative agreement with experimental data obtained in a typical manganite La2/3Ca1/3MnO3. Our result indicates that the formation and growth of ferromagnetic metallic clusters are responsible for the observation of unusual transport properties near the insulator-metal transition.     

Spin-Polarized Tunnelling Magnetoresistance Effects in La0.833K0.167MnO3／SrTiO3 Polycrystalline Perovskite Manganites

A sample of La0.833K0.167MnO3-SrTiO3 (LKMO/STO) is fabricated by the sol-gel method. The microstructure,magnetic and transportation properties have been studied. X-ray diffraction patterns indicate that the structure of LKMO/STO is a homogeneous solid solution phase. The resistivity of LKMO/STO shows the insulator behaviour, which is different from La0.833K0.167MnO3 (LKMO) whose resistivity shows metal-insulator transition with decreasing temperature. The low-field (moH = 0.02 T) magnetoresistance decreases from 11% to 0.2% with the increasing temperature from 4 K‘to 220K for the LKMO/STO sample. The magnitude of magnetoresistance in a strong field (μoH = 5.5 T) almost increases linearly with decreasing temperature and reaches the maximum of 65% at the low temperature of 4.2K, which is much higher than that oE LKMO (40%). The enhanced low-field magnetoresistance effects are quantitatively explained by the spin-polarized tunnelling at grain boundaries.     

Magnetic Tunnel Junctions with MgO／Al-O Composite Barriers

Magnetic tunnel junctions (MTJs) with structures of Ta(5 nm)/Cu(30nm)/Ta(5 nm)/Ni79Fe21 (5 nm)/Ir22Mn78 (12 nm)/Co62Fe20B18 (4 nm)/MgO(d)/Al(0.8 nm)-oxide/Co62Fe20B18 (6 nm)/Cu(30 nm)/Ta(5 nm) on a thermally oxidized Si wafer substrate were fabricated by magnetron sputtering and photolithographic patterning method. The tunnel magnetoresistance (TMR) and the bias dependence of TMR at room temperature for the MTJs with different thickness d of MgO are investigated. TMR values of over 50% as high as those of the MTJs with pure Al-O barrier and the TMR-voltage curve asymmetries, which vary with the increase of d, are observed in the MTJs with hybrid barriers after annealing at 265℃ for an hour. The dependences of TMR, resistance and coercivity of the MTJs with composite barriers on temperature are also investigated.     

Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory

Sn-doped Ge2Sb2Te5 thin films deposited on Si（100）/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2-10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.     

用电阻法研究氧在YBa_2Cu_3O_(7-x)中的扩散

用测量电阻法,在等温条件下在544℃至810℃温区研究了 YBa_2Cu_3O_(7-x)失氧过程中氧的扩散.当T>700℃时扩散激活能为1.47_eV/atom;当 T<700℃时为0.90_eV/atom.两温区的差异可能与氧在四方和正交两种结构中扩散机制不同有关.     

硬盘驱动器巨磁电阻(GMR)磁头:从微米到纳米

近年来电脑硬盘存储密度的飞速增长(年增长100％)已超出摩尔定律的预言．这种惊人的高速增长中，最关键的因素是自旋阀纳米多层膜结构，即巨磁电阻(GMR)读传感器磁头的应用．事实上，巨磁电阻磁头读传感器(reader sensor)已经实现由微电子器件向纳米电子器件转化，并且形成大规模产业．这一过程包含了自旋电子学、材料科学、微电子工程学、化学、微机械力学和工程学等诸学科和相关微加工技术综合性挑战极限，进入纳米科技领域实质性进步．     

纳米晶Si在高压下的电学性质与金属化相变

 在金刚石压砧装置上,采用电阻和电容测量方法,研究了粒径为15~18 nm和80 nm的纳米晶Si在室温下、24 GPa内的电阻、电容与压力的关系。实验结果表明,它们分别在19~17 GPa和14 GPa左右发生了金属化相变。