核形变随Z,N的变化与核子间相互作用的电荷无关性

用双能级模型以及与电荷无关的核子-核子相互作用研究核形变随Z,N的变化,得到了与实验大体相符的结果.     

变形核的电荷密度分布

本文应用原子核的宏观模型提出了一种比较简单的计算变形核电荷密度的方法.具体计算了¹⁹²Os、¹⁵⁴Gd、¹⁵²Sm、¹⁷⁴Yb、及^{144,148,150,152}Sm等原子核的电荷密度分布.结果表明,宏观模型计算的结果能较好地与实验测量结果相符合.因此,只要根据变形核基态到各转动态跃迁几率或电多极矩的实验值,则可按本文方法,从理论上预言变形核的电荷密度分布.     

电容器及其电容

本文通过导体电荷与电势的线性关系，说明电磁学教材中关于电容器及其电容定义的含义．     

Superconductivity and spin fluctuations

In the conventional superconductors, the Cooper pairs are mediated by phonons, which is a process where only the correlations between the phonons and the charge properties of the electrons are needed. However, superconductivity can also be derived from other types of elementary excitations. The spin fluctuations are arguably the most promising candidate that can mediate such unconventional superconductivity. In some of the important systems such as cuprates, Fe-based superconductors and heavy-fermion superconductors, spin fluctuations play a key role in the mechanism of their superconductivity although there are still many debates. In this paper, we will give a brief review on the correlation between the spin fluctuations and superconductivity.     

X射线CCD标定及模拟

 在北京同步辐射光源4B7B实验站上,采用透射光栅配X射线电荷耦合元件(CCD)的方法对单色光进行了检验,在优化高次谐波抑制方法后,开展了X射线CCD的灵敏度标定实验研究;在标定数据处理过程中,提出了等效曝光时间的概念,修正了快门开合造成的曝光时间误差。标定实验获得了100~1 500 eV能区CCD的灵敏度,补充了300~600 eV能区CCD灵敏度标定数据,验证了简化模型的正确性。     

线电荷与接地半无限大导体板所形成的电场

将镜像法和保角变换法相结合,计算由线电荷与接地半无限大导体板所形成的电场,给出其电势分布和场强分布,进一步得出等势线方程和电场线方程,并利用数学软件MATLAB绘制出等势线图和电场线图.     

理论计算中电势能零点的选取对电荷注入的影响

基于紧束缚的Su-Schrieffer-Heeger(SSH)模型,利用非绝热的动力学方法,研究了金属/聚合物结构中电势能零点的选取对电荷注入的影响.理论计算发现,电场越强,电势能零点的选取对电荷注入的影响就越大. 关键词： 电势能 电荷注入 非绝热动力学     

Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

In this paper, we investigate an Al₂O₃/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al₂O₃/HfO₂ stack as the blocking layer, the sample with the Al₂O₃/HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al₂O₃/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.     

由感应电荷巧解电磁感应问题

从安培力的冲量出发,以感应电荷为桥梁,运用动量定理,将安培力作用下的变速运动的复杂问题简化,避免了繁杂的数学运算,巧妙地解答电磁感应问题.     

高斯涡旋光束的傍轴度

按单色光束傍轴度的定义,对高斯涡旋光束的傍轴度进行了研究.使用角谱表示法推导出高斯涡旋光束傍轴度的解析公式,用此研究了傍轴度和高斯涡旋光束参数之间的关系.结果表明,随背景高斯光束束腰宽度和光涡旋离轴参数的增加及随光涡旋拓扑电荷的减少,高斯涡旋光束的傍轴度增加.对所得结果用傍轴度与远场发散角间的关系做了物理解释.