电子创新设计学习与实践——铸就了我的大学生活

此文记述参加全国大学生电子设计竞赛和参与国家大学生创新性实验项目的经历和心路历程，以及取得的收获和成果。     

浅谈高校图书馆电子阅览室的功能和管理

本文结合电子阅览室的工作实践,明确了高等院校图书馆电子阅览室的服务对象和宗旨,浅析其服务功能与管理对策及提升高校图书馆电子阅览室的服务水平的途径。     

上海大学通信与信息工程学院

学院概况 上海大学通信与信息工程学院经过40余年的建设，现已成为上海市通信、信息处理和电子工程等领域培养高层次人才和科学研究的重要基地。     

The production of slow particles in 16O－Em interactions at 4.5 A GeV/c

A sample of 1233 events is used to study the general characteristics of {}^{16}O－Em interactions at 4.5 A GeV/c. Multiplicity and angular distributions of slow particles and correlations among them are discussed. The present data are compared with the corresponding results from the interactions of other projectiles at the same energy and also the same projectile at different energies. The results indicate that black particle production is independent of the energy and mass of the projectile, but for grey particles it is dependent on the mass of projectile.     

Co-P非晶态合金电子性质和局域结构的理论研究

根据Co P非晶态合金结构的短程有序和结构中可能存在P -P相互作用的实验事实 ,选择了单磷原子簇模型ConP(n =1～ 5 )和双磷原子簇模型ConP2 (n =1～ 4 ) ,用密度泛函理论方法对其进行计算 .结果表明 ,在单磷Co2 P( 2 ) 、Co3 P( 1) 及Co4P( 2 ) 模型体系中 ,Co原子供给P原子电子 ,与电负性规则一致 ,同时Co和P之间具较强化学作用 ,可以形成稳定的原子簇 ;而在双磷和单磷原子簇Co5P( 1) 模型体系中 ,形成的原子簇不稳定 ,采用单磷Co2 P( 2 ) 、Co3 P( 1) 及Co4P( 2 ) 模型能较好地反映Co P非晶态合金的结构特点 .     

党和国家领导人珍爱珠算

我们党和国家领导人历来重视珠算的作用。1972年周恩来总理与李政道博士谈话中指出：“要告诉下面．不要把算盘丢掉、猴子吃桃子最危险”。1979年薄一波同志为《珠算》杂志创刊号题词时也指出：“算盘是我国的传统计算工具。一千多年以来在金融贸易和人民生活等方面起了重要作用。用算与与用电子计算札并不矛盾。现在还应充分发挥算盘的功能．为我国经济建没事业服务。”《珠算》杂志1980年第一期刊登了“陈云同志在杭州打算盘”的照片。     

Isoscaling of the Fission Fragments with Langevin Equation

The Langevin equation is used to simulate the fission process of ^112Sn ^112Sn and ^116Sn ^116Sn. The mass distribution of the fission fragments are given by assuming the process of symmetric fission or asymmetric fission with the Gaussian probability sampling. The isoscaling behaviour has been observed from the analysis of fission fragments of both the reactions, and the isoscaling parameter α seems to be sensitive to the width of fission probability and the beam energy.     

Singlet-Triplet Transition in Quantum Dots Confined by Triangular and Bowl-Like Potentials： the Effect of Electric Fields

We theoretically investigate the energy spectra of two-electron two-dimensional （2e 2D） quantum dots （QDs） confined by triangular potentials and bowl-like potentials in a magnetic field by exact diagonalization in the framework of effective mass theory. An in-plane electric field is found to contribute to the singlet-triplet transition of the ground state of the 2e 2D QDs confined by triangular or bowl-like potentials in a perpendicular magnetic field. The stronger the in-plane electric field, the smaller the magnetic field for the total spin of the ground states in the dot systems to change from S = 0 to S = 1. However, the influence of an in-plane electric field on the singlettriplet transition of the ground state of two electrons in a triangular QD modulated by a perpendicular magnetic field is quite small because the triangular potential just deviates from the harmonic potential well slightly. We find that the strength of the perpendicular magnetic field needed for the spin singlet-triplet transition of the ground state of the QD confined by a bowl-like potential is reduced drastically by applying an in-plane electric field.     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

光学材料微缺陷引起的损伤机理及后处理

采用时域有限差分方法（FDTD）进行元件表面微结构电磁场分布的数值模拟；同时实验分析了化学湿法刻蚀对光学元件表面面形及粗糙度、激光损伤阈值等的影响。