关于自组凯尔文电桥的测量不确定度

凯尔文电桥是国内大学基础物理实验所开设的实验内容之一，且多为自组式．关于自组凯尔文电桥的测量精度与桥路参数精度之间的关系，有些实验教材已有推导，但尚未涉及与两低阻相邻电压接头间跨桥电阻的定量关系，不注意这一点，会给测量结果带来一定的误差．本文就实际中常用的等双臂凯尔文电桥从理论上定量地推出了这一关系，进而给出了跨桥电阻可忽略时的适当阻值．     

Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.     

关于反射法测量透镜中心偏三轴误差的讨论

提出反射法测量透镜中心偏的具体装置,并具体分析转台装卡轴R(以和透镜接触的外圆柱面作为定位面),附加透镜光轴F,自准直仪光轴Z对整个系统误差的影响.     

谈数制转换方法的改进

介绍了各进制之间的一般转换方法,指出数制转换的关键问题是十二进制数的转换.针对传统方法在转换规则、计算量以及准确度等方面的不足,提出了"化权值和法".教学实践表明,该方法解题的速度和准确度均优于传统方法.     

FJZ-250型高速分幅相机时间测量不确定度分析

FJZ-250型高速转镜分幅相机因转镜速度的不可重复性，光机结构的构造原理和控制系统各路高压触发时间的漂移，导致了时间测量的不确定度。为此，须对相机测量数据进行校正。阐述了校正方法、提供了逐幅校正位置误差的修正系数。若以预置转速对应的名义周期值去处理测量结果，则相机的时间测量合成小确定度将达1％，对名义周期值和名义幅间间隔时间值进行修正后，则可降至0.3％。     

中子飞行时间测量技术

用MCNP程序和ENDF／B—VI库数据计算了Livermore的^6 Li探测器的中子探测效率，并与国外发表的^6Li玻璃的探测效率数据进行比较，结果基本一致，表明本实验室的计算方法是正确的。     

用脉冲激光同轴全息技术测量微射流

强冲击载荷下自由表面的粒子喷射现象还没有被清楚认识，很难从理论上给以准确的计算模型，因而从实验测定材料在冲击载荷下自由面面喷射物质的分布和粒子尺寸大小就显得非常重要。测量微粒场的脉冲激光同轴全息技术，具有在纳秒或更在短时间内“固化”运动微粒场、测量精度高、景深长、光路简单和获得的信息量大等优点。这些优势使得脉冲激光同轴全息技术成为研究微喷射场的重要测试手段之一。     

脉冲中子探测系统的中子灵敏度能量响应

为了获得脉冲中子探测系统的中子灵敏度能量响应，编制了适合裂变中子测量探测系统灵敏度能响的一系列专用程序，研究了相应的实验标定技术，采用理论计算和实验验证相结合的方法，对几套探测系统中子灵敏度能量响应进行了研究，初步解决了标定需要的“单能、脉冲、高强度、多个不同能量的中子源”问题，使不确定度大大提高，满足了测量的要求。     

Lifetime Measurements for Electric-Dipole △n=0 Transitions in the Beryllium-Like Sulfur

We have measured lifetimes of △n=0 allowed transitions in beryllium-like sulfur using beam foil spectroscopic techniques. The measured values, derived from analysis of arbitrarily normalized decay curves, are presented and compared with theoretical calculations and previous measurements. Accurate probabilities have been determined by the well-known relationship.     

Von Neumann Entropy of an Electron in One-Dimensional Determined Potentials

By using the measure of von Neumann entropy, we numerically investigate quantum entanglement of an electron moving in the one-dimensional Harper model and in the one-dimensional slowly varying potential model. The delocalized and localized eigenstates can be distinguished by von Neumann entropy of the individual eigenstates.There are drastic decreases in von Neumann entropy of the individual eigenstates at mobility edges. In the curve of the spectrum averaged von Neumann entropy as a function of potential parameter λ, a sharp transition exists at the metal-insulator transition point λc = 2. It is found that the von Neumann entropy is a good quantity to reflect localization and metal-insulator transition.