ZnWo4：Cr^3＋的吸收光谱研究

本文通过对ZnWo4:Cr^3 晶体的光学吸收谱的观测资料^[1]的分析，假定Cr^3 杂质的有效晶场的八面体结构的变形后的D4晶场。采用Oh点群表象准对角型简化强场方案，导出了d^3-D4强场能量矩阵。首次计算了ZnWo4:Cr^3 的自旋允许谱精细结构。理论计算结果与实验吻合较好。     

SrFCl:Eu~(2+)晶体的电子自旋共振谱研究

用程序降温法生长了SrFCl:Eu~(2+)晶体,并测量了它的电子自旋共振谱。应用最小二乘法拟合技术对g因子及自旋哈密顿参数进行了精确拟合。报道了各向异性的g因子及有关自旋哈密顿参量。发现并归属了Eu~(2+)的高阶禁阻跃迁。     

硅团簇Si+n(n=1-3)注入Si单晶性质的研究

利用硅团簇Si+n(n=1-3)注入Si单晶, 在Si单晶内形成一些单空位和双空位, 通过其光吸收谱观察到了带电状态为V02的双空位缺陷, 以及团簇效应对缺陷的影响, 正电子湮灭及TRIM程序模拟计算都表明团簇效应的存在.     

Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4

The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La_2-xBa_xCuO₄ at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La_1.48Nd_0.4Sr_0.12CuO₄. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.     

发电厂相变干冷排热系统优化与不确定性分析初探

通过火力发电厂相变空气干式冷却排热系统的热经济学分析，提出了相变干式冷却系统优化的目标函数和优化参数，利用数值计算的可变容差法进行优化计算，取得了满意的结果，为了保证优化在可变经济环境的可靠性动力稳定性， 对优化结果进行了不确定性分析。