用~13CNMR波谱技术研究烃源岩显微组分的化学结构与成烃潜力

取１７个烃源岩的显微组分，用￣１３ＣＮＭＲ波谱技术进行了化学结构与成烃潜力的研究，按照脂碳的丰度与油气潜力碳的大小，各组分可按如下顺序排列：藻类体、树脂体、角质体、孢子体、木栓质体、镜质体、惰性体．以惰性碳、油潜力碳与气潜力碳划分显微组分为三组成，并构成三元图，藻类体位于图的上部，相当于Ｉ型干酪根；各稳定组分位于图的中部，相应干Ⅱ型干酚根；镜质体与惰质体位于图的左下部，相当于Ⅲ型干酪根．据此，可从烃源岩显微组分的分析组成估算它的生油与生气潜力     

冀东金矿集中区控矿条件探讨

论述了冀东金矿集中区绿岩型金矿的矿质来源，并恢复其矿源层的原岩。对构造及中小型岩浆任入体的控矿作用作了论述，并提出了成矿模式。     

Mindlin层合圆柱壳理论的Hamiltonian结构与辛解析解

通过引进状态变量及其对偶变量。建立Ｍｉｎｄｌｉｎ层合圆柱壳的Ｈａｍｉｌｔｏｎ正则方程．在辛几何数学框架下，采用共轭辛正交归一关系给出各种复杂边界条件下的精确解．     

转换层钢筋混凝土短梁设计建议

本文主要从结构市置与截面尺寸、构造要求，短梁的洞口布置等五个方面，给出了转换层钢筋混凝土短梁设计建议。     

Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

视标准层的构成与测井资料数据标准化

中国东部油田以陆相沉积为主，且被断层高度复杂化，导致缺乏可在全区追踪对比的稳定的标准层，针对此种情况，本文提出，利用交会分析技术，借助自然伽马，自然电位，声波测井，感应测井，井径等测井曲线，通过选择合理的截止值，构成不受井眼条件，岩性，物性，油气，界面等因素影响的沉积特征、地层埋深一致的非渗透层组－视标准层，对测井资料进行标准化处理。     

水旋澄清池中悬浮层的特性

在水旋澄清池中，稳定的悬浮层中一些比较突出的特点以及在水工业中这些特点在生产中的应用。     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.     

Al2O3SiO2/ZL109 金属基复合材料的强度性能研究

介绍了硅酸铝短纤维增强ＺＬ１０９铸铝合金（Ａｌ２Ｏ３ＳｉＯ２／ＺＬ１０９ＭＭＣ）的静态实验和冲击实验结果。给出了这种复合材料的静态强度、动态屈服强度和层裂强度并对实验结果进行了分析讨论。     

单层光学薄膜中薄膜－衬底体系的双重干涉效应及其应用

提出了单层光学薄膜中薄膜与衬底反射光之间的双重干涉效应的理论，实验结果证实了理论分析的正确性。双重干涉效应使薄膜－衬底体系的热致反射调制度高达８０％，这一效应可望有极广泛的应用