甚高频等离子体增强化学气相沉积法沉积μc-Si∶H薄膜中氧污染的初步研究

对不同的本底真空条件下,采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅（μc_Si∶H）薄膜中的氧污染问题进行了比较研究.对不同氧污染条件下制备的薄膜样品的x射线光电子能谱与傅里叶变换红外吸收光谱测量结果表明：μc_Si∶H薄膜中,氧以Si—O，O—O和O—H三种不同的键合模式存在,不同的键合模式源自不同的物理机理.μc_Si∶H薄膜的Raman光谱、电导率与激活能的测量结果进一步显示：沉积过程中氧污染程度的不同,对μc_Si∶H薄膜的结构特性与电学特性产生显著影响；而不同氧污染对μc_Si∶H薄膜电学特性的影响不同于氢化非晶硅（a_Si:H）薄膜. 关键词： 氢化微晶硅薄膜 甚高频等离子体增强化学气相沉积 氧污染     

氯仿在悬浮TiO2体系中的降解

分别用光还原沉积法制备的掺铂TiO2纤维和商用TiO2作为催化荆，对氯仿进行光催化降解。通过测定Cl^-浓度发现不同通O2方式对氯仿的光降解有很大影响，O2的存在，促进了氯仿的降解；并进一步对溶液中的溶氧量(DD)测定，发现DO值呈线性下降且氯仿降解过程中有氧降解和无氧降解2种机理是共存的；同时发现上述2种催化剂的反应现象大相径庭，并结合了有机质液相吸附理论对其反应现象进行分析，发现纤维状微观结构是其高光催化性能的直接原因。     

Deposition of Diamond-Like carbon Films by High-Intensity Pulsed Ion Beam Ablation at Various Substrate Temperatures

Diamond-like carbon (DLC) films have been deposited on to Si substrates at substrate temperatures from 255℃ to 400O℃ by a high-intensity pulsed-ion-beam (HIPIB) ablation deposition technique. The formation of DLC is confirmed by Raman spectroscopy. According to an x-ray photoelectron spectroscopy analysis, the concentration of sp^3 carbon in the films is about 40% when the substrate temperature is below 300℃ C. With increasing substratetemperature from 25℃ to 400℃, the concentration of sp^3 carbon decreases from 43% to 8%. In other words,sp3 carbon is graphitized into sp^2 carbon when the substrate temperature is above 300℃. The results of xray diffraction and atomic force microscopy show that, with increasing the substrate temperature, the surface roughness and the friction coefficient increase, and the microhardness and the residual stress of the films decrease.     

大兴井田4#煤层砂岩砾岩体特征及成因分析

运用沉积学理论,通过对铁法煤田大兴井田4#煤层中发育的砂岩、砾岩体的研究,指出它们均为河道沉积产物,并从中识别出了聚煤早期河道正常沉积、聚煤期后河道水携物与坍塌物混积和河道泥石流沉积三种成因类型,论述了它们各自的岩相和空间发育特征,这将有益于揭示其平面分布规律,为进一步指导采场的科学设计和修订提供了基础.     

Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.     

Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.     

电沉积n—CdSe在多硫溶液界面上的电荷转移机理

通过测定平带电位,澄清了OH~-离子在CdSe电极上的吸附情况,发现在S、S~(2-)、OH~-溶液中S~(2-)离子优先吸附,结合旋转环盘电极测量,证明n-CdSe电极在多硫溶液界面上的电荷转移过程。     

c轴定向氮化铝薄膜的制备

利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。     

滴道矿区矿井充水规律探讨

本文通过矿区含水层分析，简述矿井充水影响因素，阐述了矿井防水的重点。     

硼酸对镍-镁合金电沉积和电化学性质的影响

该文报道了分别用0．05、0．10、0．15、0．33、0．50g／mL的硼酸进行电沉积镍-镁合金的实验。原子吸收光谱实验的结果表明，沉积相中包含不等量的镍和镁，电流效率也随硼酸量的不同而发生不同趋势的变化。从极化实验的结果，讨论了硼酸在电沉积中所起的作用是阻碍氢气的析出。在溶出伏安图中，能观察到5种不同强度的Mg2Ni峰，与XRD得到的结果相吻合。循环伏安测量结果证明镍-镁合金沉积薄膜电极具有良好的充／放电性能。