平衡态电弧等离子体统计热力学属性的计算

以热力学平衡和化学平衡假设为前提,在求解电弧等离子体统计热力学参数的基本原理的基础上,考虑了粒子激发态的影响,得到精确的粒子配分函数,进而运用德拜模型将等离子体粒子相作用的影响包含在内,从化学平衡方程得到氮气和氩气平衡态电弧等离子体内部粒子成分与温度、气压的函数,并以此计算获得相应的统计热力学参数.利用此方法计算出了不同气压条件下(0.01、0.10、0.30、0.50、1.00MPa)、不同温度范围内(300～40 000K)氮气和氩气电弧等离子体热力学参数,并与以往文献中的部分结果进行了对比与分析.结果表明,在15 000K以内统计热力学参数的计算结果良好,随着温度的继续升高,计算结果产生了误差,误差主要来源于配分函数计算方法和德拜修正带来的计算精度的差异.     

原料组成和氩气流量对铁尾矿合成SiC粉末的影响

利用X射线衍射、扫描电镜和能谱分析等手段研究了原料组成和氩气流量对铁尾矿合成SiC粉末相组成和显微结构的影响.研究结果表明产物中主晶相为β-SiC,杂质相主要是FexSiy,其中SiC多以柱状形式存在.随着n(C)∶n(SiO2)的增加,产物中SiC的相对含量逐渐增大.在n(C)∶n(SiO2)为4时,SiC的相对含量达最大值(82%左右),随后SiC的相对含量随着其增大而减小.产物中SiC的相对含量随着氩气流量的增加而降低.     

溅射氩气压强对AZO薄膜光电性能的影响

采用磁控溅射方法在玻璃村底上制备出了Al掺杂ZnO(AZO)薄膜,研究了溅射过程中不同置气压强对薄膜光学、电学和微结构等方面性能的影响.XRD测试结果表明,所制备的薄膜均具有呈c轴择优取向的纤锌矿结构.当氩气压强为0.3Pa时AZO薄膜的电阻率降至2.77×10-3Ωcm,可见光平均透过率为93%.     

气体成分对等离子体斑图的影响

采用双水电极介质阻挡放电装置,在大气压下研究了氩气和空气混合气体中气体成分对等离子体斑图(包括四边形斑图和六边形斑图)的影响.四边形斑图和六边形斑图的电压范围随着空气含量的增加而逐渐增大.实验测量了击穿电压随空气含量变化的关系.结果发现:击穿电压随着空气含量的增加而增大,但不成简单的线性关系.在氩气放电中,击穿电压值随着放电间隙的增大而增大.     

减压氩气环境中铝合金样品激光微区发射光谱研究

以铝合金光谱分析标样中的Cu,Zn,Mg为分析对象,采用CCD数据采集处理系统,讨论了辅助激发高度、氩气气压和流量的变化对分析谱线相对强度的影响,实验表明:在减压氩气环境中,不同元素的谱线相对强度受实验条件影响不同;但在一定的实验条件下,各元素谱线相对强度均可达到最大值,具有高信噪比,可忽略基体效应对光谱分析的影响.     

不同气氛介质阻挡放电等离子体对芳纶表面的改性

为了改善芳纶的表面性能,利用介质阻挡放电,对其表面进行改性.在Ar,Ar/O2,Ar/N2不同气氛介质阻挡等离子体的处理后,探究芳纶表面所产生的不同作用效果机理,同时考察了O2和N2的流量对芳纶表面作用效果的影响.采用了微脱胶法、X射线光电子能谱(XPS)以及原子力显微镜(AFM)分别对处理后芳纶表面黏结性能、表面元素和官能团的变化以及表面粗糙程度的变化进行了比较.结果表明:对芳纶表面的改性是由刻蚀作用还是活性基团占主导与放电气体的种类密切相关,而通入气体的流量也会影响表面改性的处理效果.     

Measurement of the argon-gas-induced broadening and line shifting of the barium Rydberg level 6s24d 1D2 by two-photon resonant nondegenerate four-wave mixing

We apply two-photon resonant nondegenerate four-wave mixing with a resonant intermediate state to the obser-vation of the broadening and shifting of the barium Rydberg level 6s24d 1^D2 by collision with argon. The collision broadening and shifting cross sections are measured. This technique is purely optical, and can investigate the pressure dependence of the transverse relaxation rate-P21 between the Rydberg state and an intermediate state, as well as the transverse relaxation rate F20 between the Rydberg state and the ground state.     

Low-energy structure in the ionization of argon: Comparison of experiment with theory

The above-threshold ionization of argon in an intense 70-fs,400-nm linearly polarized laser pulse has been investigated by the velocity map imaging techniques,combined with an attosecond-resolution quantum wave packet dynamics method.There is a quantitative agreement in all dominant features between the experiment and the theory.Moreover,a peak-splitting phenomenon in the first energy peak has been observed at high pulse intensity.Further,through the theoretical analysis,an ac Stark splitting with evident resonant and nonresonant ionization pathways has been found to be the physical reason for the experimental observations.     

氩气压力对二茂铁催化CaC_2-CHCl_3体系制备碳球的影响

以电石和氯仿为碳源和反应物,以二茂铁为催化剂,研究不同压力对CaC2-CHCl3体系制备碳球的形貌和结构的影响。反应设备是100mL的不锈钢高压釜,充入的氩气压力为0.5~1.5MPa,在350℃进行化学反应并保温3h,制备不同类型的碳球。采用X线衍射仪、扫描电子显微镜、透射电子显微镜和激光拉曼光谱仪等手段分析碳球的物相、形貌和结构。探讨空心碳结构的CHCl3雾化小液滴生长机理。研究结果表明:CaC2-CHCl3体系制备的碳球主要由无定形炭组成,随着压力增加,结晶程度增大。空心碳球的形成与体系压力相关,当充入压力为0.5MPa时,合成直径为100~260nm的实心无定形碳球,具有向菜花结构转变的趋势;当充入的氩气压力为1.0MPa时,合成4种不同空心碳结构,即空心毛绒碳球、角状空心碳棒、空心光滑碳球或碳棒和多边形化的空心碳球;当充入的氩气压力为1.5MPa时,合成3种不同直径范围的碳球,相同直径的碳球团聚在一起。     

Growth Kinetics of Silicon Carbide Film Prepared by Heating Polystyrene/Si（111）

SiC films were prepared by heating polystyrene/Si（111） in normal pressure argon atmosphere at different temperatures. The films were investigated by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Fourier transform infrared absorption measurements. The thicknesses of SiC films were calculated from FTIR spectra. The growth kinetics of the growth process of SiC films were investigated as well. The thicknesses of the SiC films grown for 1 h with increasing growth temperatures have different trends in the three temperature ranges： increasing slowly （1200-1250 ℃）, increasing quickly （1250- 12.70 ℃）, and decreasing （1270-1300 ℃）. The apparent activation energies of the growth process of SiC films in the three ranges were calculated to be 122.5,522.5, and -127.5 J/mol respectively. Mechanisms of the different growth processes were discussed. The relation between film thicknesses and growth temperatures indicated that the growth process was a 2D mechanism in the first range and 3D mechanism in the second range. In the third range, the thicknesses of SiC films were decreased by the volatility of Si and C atoms.