用Josephson结电子模拟器测量磁通量子2e/h

介绍用Josephson结电子模拟器在政党温度下，模拟测量磁通量子2e/h，用模拟器来研究Josephosn结的特性。该实验可作为普通物理实验中课题设计实验的一个内容。     

PbI_2－PbBr_2－KCl系统玻璃的形成及其析晶行为

ＰｂＩ_２可以单独形成玻璃。ＰｂＩ_２－ＰｂＢｒ_２－ＫＣｌ三元系统玻璃具有良好的玻璃形成能力。通过恰当的热处理，不仅可获得透红外性能与原始玻璃一致的微晶玻璃，同时还可克服自发析晶倾向和大幅度地提高玻璃的显微硬度。以此三元系统为基础，有望开发出一类具有实用前景的透红外玻璃材料。     

Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

Yb:FAP和Yb:C3S2-FAP晶体光谱的温度特性和选择激发

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