MICROMECHANICS OF MACROELECTRONICS

The advent of flat-panel displays has opened the era of macroelectronics. Enthusiasm is gathering to develop macroelectronics as a platform for many technologies, ranging from paper-like displays to thin-film solar cells, technologies that aim to address the essential societal needs for easily accessible information, renewable energy, and sustainable environment. The widespread use of these large structures will depend on their ruggedness, portability and low cost, attributes that will come from new material choices and new manufacturing processes. For example, thin-film devices on thin polymer substrates lend themselves to roll-to-roll fabrication, and impart flexibility to the products. These large structures will have diverse architectures, hybrid materials, and small features; their mechanical behavior during manufacturing and use poses significant challenges to the creation of the new technologies. This paper describes ongoing work in the emerging field of research - the mechanics of macroelectronics, with emphasis on the mechanical behavior at the scale of individual features, and over a long time.     

X射线微光刻的常规X线光源实现方法

叙述了利用固体靶X射线光源实验X射线微光刻的方法，给出了X射线腌膜、抗蚀剂及X射线曝光的工艺过程和实验结果。     

硅基垂直腔面光发射器件的研制

为了实现与现有集成电路工艺兼容的全硅基发光器件,提出了一种新型硅基垂直腔面光发射器件结构。它采用等离子体增强化学气相淀积(PECVD)方法制备的非晶硅(或非晶氮化硅)/二氧化硅交替生长的多层薄膜结构为分布式Bragg反射器(DBR),以夹在上下两个Bragg反射器之间的非晶碳化硅薄膜为中间发光层。通过设计与模拟,分析了DBR中薄膜生长顺序与层数对器件性能的影响。最后研制出光致红光发射器件和电致蓝绿光发射器件,并给出了它们的光致和电致发光谱。结果显示了在光致和电致激发下非晶碳化硅的发光和DBR对光谱的限制增强作用。     

Supercritical CO2-based solvents in next generation microelectronics processing

Large amount of chemicals and highly purified-water are needed in microelectronic manufacture. The ability of solutions to penetrate tiny spaces will become significantly more challenging as the feature size of semiconductor devices decreases to nanoscale dimensions and the functional complexity of integrated circuitries (ICs) ever increases. Supercritical fluids (SCFs) possess a unique combination of properties (no surface tension and gas-like viscosity) that can potentially be exploited for application in microelectronics manufacturing and processing in response to needs for material-compatible cleaning systems, small-dimension developing solvents, and low chemical-use processes. Recent microelec- tronics processes for cleaning and rinsing of patterned porous low-k dielectrics and drying of photo- resist in CO2-based solvents are the main focus of this review. Additional topics in supercritical fluid processing include spin coating of photoresists, development with nanoscale dimensions, metal deposition and silylation.     

Gas flow characteristics in straight silicon microchannels

Experiments have been conducted to investigate nitrogen gas flow characteristics through four trapezoidal silicon microchannels with different hydraulic diameters. The volume flow rate and pressure ratio are measured in the experiments. It is found that the friction coefficient is no longer a constant, which is different from the conventional theory. The characteristics are first explained by the theoretical analysis. A simplified rectangular model (rectangular straight channel model) is then proposed. The experimental results are compared with the theoretical predictions based on the simplified rectangular model and the two-dimensional flow between the parallel-plate model which was usually used. The difference between the experimental data and the theoretical predictions is found in the high-pressure ratio cases. The influence of the gas compressibility effect based on the Boltzmann gas kinetic analysis method is studied to interpret the discrepancy. We discuss two important factors affecting the application extent of different prediction models.     

Annealing Characteristics of ultra—thin high—K HfO2 gate dielectrics

Ultra-thin HfO2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO2 target and subsequently annealed at different temperatures and atmospheres.We have studied the capacitance-voltage,current-voltage,and breakdon characteristics of the gate dielectrics.The results show that electrical characteristics of HfO2 gate dielectric are related to the annealing temperature.With increase annealing temperature,the largest value of capacitance decreases,the equivalent oxide thickness increases,the leakage current reduces,and the breakdown voltage decreases.     

物理学研究与微电子科学技术的发展

回顾了微电子学的诞生和微电子技术的发展历史，展望了微电子技术未来的发展趋势。在微电子技术延生和发展中具有一些里程碑式的发明，如晶体管、集成电路、集成电路平面工艺、MOS器件、微处理器、光刻技术、铜互连工艺的发明等，其中物理学研究和突破起子关键的基础作用。在社会需求、物理学研究和技术进步的推动下，微电子技术一直并将继续以特征尺寸缩小、集成度提高的模式，按摩尔定律预测的指数增长率发展。微电子技术的发展，不仅为物理学的研究提供了崭新的技术基础，而且为物理学研究展现了更为广阔的空间。但随着器件特征尺寸逐渐缩小并逼近期物理极限，微电子技术的发展将受到来自于材料、工艺和物理基础等方面的挑战，并呈现出多维发展的趋势，这些挑战涉及了微电子学与物理学的共同理论基础，需要二者互相锲合，期待新的突破。     

控制原子的芯片--在芯片上产生的玻色-爱因斯坦凝聚

不久前 ,来自德国慕尼黑的科学家们 (如Ｈ ｎｓｅｌ等 )利用微电子芯片实现了玻色 -爱因斯坦凝聚 .这一成果标志着芯片技术应用的一次飞跃 ,为量子退相干理论研究、单粒子探测、原子刻蚀、原子全息乃至量子计算机的发展开辟了一条光明之路 .Ｈ ｎｓｅｌ等在 2 0× 2 0ｍｍ2 的芯片上制备出了复杂的金导线电路 ,并且按照冷却程序通入可控的交、直电流 .微电路所产生的场与外部线圈 (其结构比以往要简单得多 )所提供的均匀场叠加 ,构成了捕获原子所需的四极磁场 .芯片位于体积为 30× 30× 110ｍｍ3 的玻璃盒内 ,它面朝下被贴在盒的顶部 .磁捕…