Aggregation Behavior of Metal-Ethylene Complexes and Its Effect on Hydrogen Storage Capacity

The aggregation of Li, Ti decorated ethylene molecules and its effect on hydrogen storage capacity have been thoroughly studied using a first-principles calculation. The results indicate that the aggregation of C2H4-metal complexes substantially impacts on the hydrogen storage capacity. The aggregation of C2H4-Li reduces the hydrogen storage capacity greatly and makes the hydrogen storage capacity of C2H4-Li complexes hardly meet the demands of the U.S. DOE. The C2H4Ti2 dimers can uptake hydrogen as much as 10 wt%, which suggests that the C2H4Ti2 dimer can be a promising candidate for practical applications.     

Ultrathin Carbon Nanotubes for Efficient Energy Storage： a First-Principles Study

On the basis of first-principles density functional calculations, the present study sheds theoretical insight on ultrathin carbon nanotube （UCNT） and hydrogenated ultrathin carbon nanotube （HUCNT） for use as potential materials not only for Li-ion battery anode but also for high-capacity hydrogen storage. The highest Li storage capacities in UCNT and HUCNT can be of LiC4 and LiC4H2, respectively, which are higher than that in graphite and LiC6. Binding between Li （Ca） atoms and these materials are found to be enhanced considerably. Each Li （Ca） atom may bind multi-hydrogen molecules, and the adsorption energies are ideally suited for storing hydrogen under ambient conditions, and the predicted weight percentage of molecular hydrogen are in the range of 6.4-12 wt% exceeding the target set by the United States Department of Energy.     

Large Storage Window in a-SiNx/nc-Si/a-SiNx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

An a-SiNx/nanocrystalline silicon [（nc-Si）/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition （PECVD） system at low temperature （250℃）. The nc-Si layer is fabricated from a hydrogen-diluted silane mixture gas by using a layer-by-layer deposition technique. Atom force microscopy measurement shows that the density of nc-Si is about 2 ×10^11 cm^-2. By the pretreatment of plasma nitridation, low density of interface states and high-quality interface between the Si substrate and a-SiNs insulator layer are obtained. The density of interface state at the midgap is calculated to be 1 ×10^10 cm^-2eV^-1 from the quasistatic and high frequency C - V data. The charging and discharging property of nc-Si quantum dots is studied by capacitance-voltage （C- V） measurement at room temperature. An ultra-large hysteresis is observed in the C - V characteristics, which is attributed to storage of the electrons and holes into the nc-Si dots. The long-term charge-loss process is studied and ascribed to low density of interface states at SiNx/Si substrate.     

FIFO芯片AL422B在视频系统中的应用

介绍了AverLogic公司推出的先入先出存储芯片AL422B的特点和主要功能。由于具备了较大的存储空间和较快的存取速度，故在视频系统中的应用最为典型，如视频信号转换、视频分割、画中画电视等均可采用FIFO芯片AL422B。     

基于能量最小的统计三级截值模型

从能量函数出发，用统计学方法建立了统计三级截值模型，克服了用光学技术实现Ｈｏｐｆｉｅｌｄ模型时难以表示其高动态范围互连权重的弱点。与光学中通常采用的模型相比，统计三级截值模型提高了网络的存储容量和寻址能力。     

全局优化学习算法下的高阶神经网络模型

研究了一个高阶神经网络模型，该模型采用全局优化学习算法，能使所有学习图样都成为系统的稳态吸引子，其存储容量远高于Ｈｅｂｂ－ｒｕｌｅ－ｌｉｋｅ型学习算法下的高阶神经网络模型，并能存储识别相关图样．对由３０个神经元组成的二阶神经网络系统进行了计算机模拟，模拟结果证实了上述结论．此外，还分析了初始突触强度对学习效果的影响，计算了不同存储图样数目下的平均吸引半径．     

清华光存储:突破国际封锁

多波长多阶存储技术是DVD之后下一代新型解决方案，中国可以用它与国外即将推出的蓝光DVD竞争。并有可能借此制定一套具有独立知识产权的光盘格式及标准，使我国光存储产业彻底摆脱国外垄断集团的制约。     

高清非编制作网带宽和存储容量的设计及测试

非编制作网络中，存储的选择是关键所在，既要考虑网络存储的性能又要考虑存储的安全性、扩展性、维护以及售后服务等。本文主要介绍贵州广播电视台第一个高清专题制作网存储的选型。以及存储的安全性测试。     

最大化系统可靠性收益的资源分配方案

针对现有存储资源分配方案存在的不足,首先引入优先级比重的概念,充分考虑了文件大小和文件重要性对系统可靠性收益的影响,然后在此基础上建立了一种非线性整数规划模型,最后求解得出了能够使得系统可靠性收益最大化的最优资源分配方案。实验结果表明,相比贪婪算法分配方案而言,在给定相同大小的存储容量情况下,提出的资源分配方案能够获得更高的系统可靠性收益。     

基于IBM－PC机的超高速数据采集系统的研究

论述了基于ＩＢＭ－ＰＣ机的超高速数据采集系统，提出了采用“闪烁”Ａ／Ｄ转换器超高速采样和分时分片多体存储技术的设计方案；简述了该系统的主要结构，由于合理地选用、分布超高速芯片（ＥＣＬ电路）和普通高速芯片，故只用少量的超高速芯片，即可满足系统的指标要求，又扩大了存储容量，提高了性能／价格比。可满足输入电压±（１０ｍＶ～２０Ｖ）双通道的示波系统模拟信号测量要求。