Vapour Recoil Effect on a Vapour Liquid System with a Deformable Interface

A new two-sided model of vapour-liquid layer system with a deformable interface is proposed. In this model, the vapour recoil effect on the Marangoni-Bénard instability of a thin evaporating liquid layer can be examined only when the interface deflexion is considered. The instability of a liquid layer undergoing steady evaporation induced by the coupling of vapour recoil effect and the Marangoni effect is analysed using a linear stability theory. We modify and develop the Chebyshev-Tau method to solve the instability problem of a deformable interface system by introducing a new equation at interface boundary. New instability behaviour of the system has been found and the self-amplification mechanism between the evaporation flux and the interface deflexion is discussed.     

十四烷基三甲基溴化铵对膨润土改性合成及其表征

用阳离子表面活性剂十四烷基三甲基溴化铵(C17H38NBr)对膨润土进行插层改性制备.配制浓度为2.35%十四烷基三甲基溴化铵溶液备用.在碘量瓶中称取3.04g膨润土,加入30mL超纯水、10mL十四烷基三甲基溴化铵溶液,制成土浆,放入微波炉中反应1min.产物经抽滤、洗涤、烘干、研磨,做FT-IR和DSC-TG分析.DSC曲线在500℃时有一明显的放热峰;TG曲线显示改性土的失重率有明显的增大.有机改性膨润土中确实含有大量有机物,改性成功.     

高能物理学发展的回顾和展望

 从电弱统一理论提出到现在已经过去了23年.量子色动力学从诞生到现在也已经历了17年,在这期间CERN建成了E_cm=60GeV的质子对撞机ISR;FNAL和CERN分别建成了能量为500GeV和450GeV的质子同步加速器.     

关于模n剩余类环

《近世代数》教材[1]中列举了大量的例子,其中最重要的就是整数环z的模n的剩余类环(z。,+,·)这类例子,全书有三十多处涉及到它。因此我们不仅要掌握理解这些例子,更重要的是通过学习这些例子熟悉了解相关的理论知识,从而达到举一反三,触类旁通的效果。下面谈三个问题。     

迭加原理的广义理解及应用

迭加原理适用于一切变量和函数线性相关问题的分析和计算。对迭加原理的广义理解,自觉拓宽迭加原理的应用,有利于从体系上掌握知识,提高分析和解决问题的能力。     

线性系统和迭加原理

以系统的观点给出电路分析中的一个重要定理——迭加定理，并对迭加定理的证明。迭加定理与线性系统的关系．迭加定理的齐次性和可加性，作了较详细的论证。     

冀东金矿集中区控矿条件探讨

论述了冀东金矿集中区绿岩型金矿的矿质来源，并恢复其矿源层的原岩。对构造及中小型岩浆任入体的控矿作用作了论述，并提出了成矿模式。     

Mindlin层合圆柱壳理论的Hamiltonian结构与辛解析解

通过引进状态变量及其对偶变量。建立Ｍｉｎｄｌｉｎ层合圆柱壳的Ｈａｍｉｌｔｏｎ正则方程．在辛几何数学框架下，采用共轭辛正交归一关系给出各种复杂边界条件下的精确解．     

转换层钢筋混凝土短梁设计建议

本文主要从结构市置与截面尺寸、构造要求，短梁的洞口布置等五个方面，给出了转换层钢筋混凝土短梁设计建议。     

Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.