臭牡丹黄酮类化合物提取及其抗氧化作用

研究臭牡丹中黄酮类化合物的最佳提取工艺条件及其抗氧化活性.以提取时间、料液比、提取温度、乙醇体积分数为主要影响因素,以黄酮类化合物提取率为考察指标,确定最佳提取工艺条件,并通过对亚硝酸盐、超氧阴离子自由基、羟自由基的清除效果及对猪油的抗氧化研究其抗氧化活性.结果表明,臭牡丹中黄酮类化合物的最佳提取工艺条件为提取时间2.0h、料液比1∶40（g/mL）、提取温度70℃、乙醇体积分数70％的条件下提取效果最好,臭牡丹中黄酮类化合物在各抗氧化体系中均表现出较强的抗氧化活性,且其作用具有剂量效应关系,其抗氧化活性均强于维生素C.     

Tight—binding calculation of the electronic states of bulk—terminated GaAs（311）A and B surfaces

We have carried out theoretical investigations on the electronic structure of GaAs(311)A and GaAs(311)B surfaces. The bulk electronic structure of GaAs has been described by the second-neighbour tight-binding formalism and the surface electronic structure was evaluated via an analytic Green function method. First, we present the surface band structure together with the projected bulk band of both Ga-terminated and As-terminated for GaAs(311)A and GaAs(311)B surfaces, respectively. In each case, the number of surface states is determined, and the localized surface features and orbital properties of these surface states along Γ-Y-S-X-Γ high symmetry lines of the surface Brillouin zone are discussed. For the Ga-terminated GaAs(311)A (1×1) surface, we have tested two possible structure models, i.e. "the bridge site" and "the hollow site" models. In comparison with the angle-resolved photoelectron spectroscopy studied recently, the results have shown that the surface electronic states of the hollow site model are in good agreement with the experiments, whereas those of the bridge site model are not. So we have concluded that the hollow site model is favourable for the Ga-terminated GaAs(311) (1×1) surface and the bridge site model should be excluded.     

Magnetic properties of TbMn6Sn6-xGax (x=0.0－1.2) compounds

Effects of Ga substitution for Sn on the structure and magnetic properties of TbMn₆Sn_6-xGa_x (x=0.0－1.2) compounds have been investigated by means of x-ray diffraction, magnetization measurement and ¹¹⁹Sn M?ssbauer spectroscopy. The substitution of Ga for Sn results in a decrease in lattice constants and unit-cell volumes. The magnetic ordering temperature decreases monotonically with increasing Ga content from 423 K for x=0.0 to 390 K for x=1.2. At room temperature, the easy magnetization direction changes from the c-axis to the ab-plane. This variation implies that the substitution of Ga for Sn leads to a decrease in the c-axis anisotropy of the Tb sublattice. An increase in the non-magnetic Ga concentration results in a monotonic decrease of the spontaneous magnetization M_s at room temperature. Since there are three non-equivalent Sn sites, 2c (0.33, 0.67,0), 2d (0.33, 0.67,0.5) and 2e (0,0,0.34) in the TbMn₆Sn_6-xGa_x compounds, the ¹¹⁹Sn M?ssbauer spectra of the TbMn₆Sn₆ and TbMn₆Sn_5.4Ga_0.6 compounds can be fitted by three sextets. The hyperfine fields (HFs) decrease in the order of HF(2d)>HF(2e)>HF(2c), which is in agreement with the magnetic structure.     

Magnetic Properties and Magnetoresistance Effect of YMn6 Sn6—x Crx （x=0—0.8） Compounds

The magnetic properties and magnetoresistance effect of YMn6Sn6-x Crx(x=0-0.8) compounds have been experimentally studied by magnetic properties and resistivity measurements in the applied field range 0-5T.The compound (x=0.8) displays a ferromagnetic behaviour,while the compounds (x=0-0.4) display an antiferromagnetic behaviour in the whole ordering temperature range.The compounds(x=0.5,0.6) experienced a transition from an antiferromagnetic state to a ferromagnetic state with increasing temperature.The compound with x=0.8 is rapidly saturated in the lower magnetic field with saturation magnetization of 35.92emu/g.The compounds(x=0-0.6) display a field-induced metamagnetic transition,and the threshold fields decrease with increasing Cr content.The cell-volume V of compounds(x=0-0.8) increases,and the ordering temperature decreases with the increasing Cr content.A large magnetoresistance effect was observed for the compounds (x=0.4,0.5),and the maximum absolute value at 5K are 32% and 24% under 5T for x=0.4 and x=0.5,respectively.     

镧与真空沉积银纳米粒子的金属间化合

根据HumeRothery规则,分析了银与镧两元素之间形成金属间化合物的倾向性,并根据真空蒸发沉积的条件,分析了在真空蒸发沉积情况下镧与银之间形成金属间化合物的可能性.用X射线光电子能谱化学位移方法对真空蒸发沉积的银、镧薄膜进行了分析,结果表明在真空沉积条件下镧与银之间的确形成了金属间化合物. 关键词： 金属间化合物 镧 银 纳米粒子     

退火温度对a-Se0.70Ge0.15Sb0.15薄膜的结构和光学性质的影响

研究了退火温度对Se0.70Ge0.15Sb0.15薄膜的影响.通过热蒸发技术,在300K温度下将大块无定形Se0.70Ge0.15Sb0.1s沉积在石英和玻璃衬底上.研究发现,未经过退火处理的薄膜结构和在300K,1.33×10-5Pa下退火1小时后的薄膜结构都是无定形结构,而在同样气压470K温度下退火1小时的薄膜有结晶现象.通过在300 2 500nm范围内垂直入射光方向上透射率和反射率的测试,研究了薄膜的一些光学参数,如消光系数(k),折射系数(n)和吸收系数(a).研究发现,n和k同热处理温度有关.通过光学数据的分析,得到了不同条件下薄膜的间接带隙宽度(Enong),未经过热处理薄膜的Enong是1.715±0.021eV,300K下退火薄膜的Enong是1.643±0.021eV,470K下退火的Enong是1.527±0.021eV.退火温度降低了带隙宽度Enong,但增加了带尾eo这种效应可以根据Mott和Davis提出的多晶体系中态密度来解释.     

生长温度对In0.53Ga0.47As/InP的LPMOCVD生长影响

利用LPMOCVD技术在InP衬底生长了InxGa1-xAs材料，获得表面平整．光亮的In0.53Ga0.47As外延层。研究了生长温度对InxGa1-xAs外延层组分、表面形貌、结晶质量、电学性质的影响。随着生长温度的升高，为了保证铟在固相中组分不变，必须增加三甲基铟在气相中的比例。在生长温度较高时，外延层表面粗糙。生长温度在630℃与650℃之间，X射线双晶衍射曲线半高宽最窄，高于或低于这个温度区间，半高宽变宽。迁移率随着生长温度的升高而增加,在630℃为最大值，然后随着生长湿度的升高反而降低。生长温度降低使载流子浓度增大，在生长温度大于630℃时载流子浓度变化较小。     

GaAs与InP半导体光导开关特性实验研究

利用Ⅲ-Ⅴ族化合物半导体材料砷化镓(GaAs)和磷化铟(InP)及其掺杂材料制作的光导开关具有很好的时间响应及高功率输出特性.比较了这两种材料制作的不同电极间隙类型的光导开关的开关时间响应速度、导通光能与饱和触发激光能量、线性与非线性工作模式及触发稳定性等特性.结果表明,利用InP和GaAs两种材料制作的光导开关都具有达到皮秒级的超快时间响应,其对时间最佳响应与偏置电场有关.两种开关的多次触发时间抖动在几个皮秒范围,输出电压峰峰值抖动优于10%.GaAs开关的非线性工作电场阈值比InP开关低,更容易实现非线性输出.     

第一原理研究铝锂金属间化合物

运用密度泛函理论系统地研究了二元铝锂金属间化合物Al₃Li、AlLi、Al₂Li₃和Al₄Li₉的结构、形成热、弹性和电子结构.通过计算四种金属间化合物的形成热,证明了金属间化合物中铝和锂之间具有强烈的化学作用. 在富锂金属间化合物中,随着锂的含量的增加,金属间化合物热力学稳定性呈线性减弱. 计算金属间化合物的单晶弹性常数可以得出四种金属间化合物都是机械稳定的. 运用Voigt-Reuss-Hil     

一种新的测定一维同核全相关的NMR技术

提出一种新的基于MDY混合脉冲的可测定一维同核全相关的核磁共振技术.称为一维自旋回波MDY相干转移(lD-SEMDY)实验.结果表明.它具有下列突出优点:一是不用Z-滤波技术就可以得到纯吸收型的一维全相关谱(lD-TOCSY).与同类技术相比,操作简便.可节省测定时间.应用范围较广;二是所测定亚谱中的信号归属通过改变混合时间和延迟时间可以得到确定;三是相干转移非常有效.远程磁化转移信号的灵敏度比较高,对弱偶合的自旋体系也可进行测定.以甙类化合物为例讨论了它在谱峰高度重叠的有机结构测定中的应用.