高多孔度多孔硅自支撑膜的制备与表征

发光多孔硅由于在光电子学方面的应用前景而引起人们极大的关注[1]．最近多孔硅发光二极管的研究方面取得了重大进展[2]。但是，有关多孔硅的发光机制仍然存在着争论[1，3，4]，利由于消除了单晶硅衬底的影响，对脱离了硅衬底的多孔硅自支撑膜能够进行普通多孔硅所不能进行的一     

金属离子对CdS量子点/聚酰胺-胺树形分子纳米复合材料光致发光性能的影响

以聚酰胺-胺树形分子为模板制备了分散好、尺寸均匀的CdS量子点，并用分光光度滴定法研究了Cd²⁺、Zn²⁺、Pb²⁺、Cu²⁺、Mn²⁺几种金属离子对其光致发光性能的影响。发现不同离子对CdS量子点的发光性能影响不同:Cd²⁺和Zn²⁺使量子点荧光增强，Pb²⁺、Cu²⁺和Mn²⁺使其荧光有不同程度淬灭。这归因于金属离子对CdS量子点表面的修饰作用。Cd²⁺能减少由S^2-悬键构成的非辐射复合中心，增强树形分子对量子点表面缺陷的钝化作用，并能在量子点周围形成类肖特基能垒，从而显著增大CdS量子点的光致发光效率。由于ZnS与CdS的晶格参数非常接近，Zn²⁺能起到与Cd²⁺类似的作用，使CdS量子点的发光效率大大增强。Pb²⁺和Cu²⁺能取代Cd²⁺在CdS量子点表面生成窄带隙的壳层，对其发光有很强的淬灭作用。由于块体PbS的带隙比块体CuS窄，故Pb²⁺的淬灭能力强于Cu²⁺。Mn²⁺能破坏Cd²⁺与PAMAM树形分子的配位键，降低树形分子对CdS量子点表面缺陷的钝化作用，且其本身在量子点表面构成了新的荧光淬灭中心，但Mn²⁺也能形成较弱的类肖特基能垒，故对量子点的发光淬灭作用较弱。     

稀土红色荧光粉SrZnO2∶Eu3+的发光性能

A series of novel luminescent materials, SrZnO₂∶M (M=Eu³⁺, or Eu³⁺ + Li⁺) have been synthesized by high-temperature solid-state reaction. The structure and luminescence properties of SrZnO₂∶Eu³⁺ phosphor were studied through XRD, photoluminescence and Raman spectroscopy. The excitation spectra show a broad intense band and a number of small peaks corresponding to the inner 4f-shell excitations of Eu³⁺ (the strongest one is at 395 nm for ⁷F₀-⁵L₆). After SrZnO₂∶Eu³⁺ phosphor was co-doped with Li⁺ ions, its charge transfer band extended to longer wavelengths. This resulted in increase of luminescent quantum efficiency of the sample. SrZnO₂∶Eu³⁺,Li⁺ phosphor can be efficiently excited by longer UV. From the fluorescence spectrum of SrZnO₂∶Eu³⁺ phosphor, apart from transition emissions of ⁵D₀→ ⁷F_J (J=0～4), the transition emissions from ⁵D₁ → ⁷F_J (J=0～2) have been observed. For the SrZnO₂∶Eu³⁺ phosphor, under excitation of UV, the dominant emission is at about 612 nm, due to the ⁵D₀→ ⁷F₂ hypersensitive transition. The incorporation of Li⁺ ions greatly enhanced the luminescence intensity and made emission peak from ⁵D₀ → ⁷F₂ transition red-shifted.     

Synthesis and characterization of a novel main chain oxadiazole-based copolymer for n-type solar cell material

A novel oxadiazole-based copolymer has been successfully synthesized through the palladium-catalyzed cross-coupling polycondensation method.The copolymer P is soluble in common organic solvents.Its structure has characterized by ~1H NMR,~(13)C NMR,gel permeation chromatagraphy (GPC),UV-vis absorbance (Abs) and photoluniminescence (PL) spectroscopy,and cyclic voltammetry (CV).Investigation of its optical properties revealed that it is yellow emitting material,and the electrochemical analysis showed that P was well suited poly (2,5-dioctyloxy-p-phenylenevinylene) (PDOCPV) for photovoltaic devices,so the copolymer P is able to act as an electron acceptor in combination with PDOCPV as the electron donor to quench photoluminescence of the copolymer in the blend,indicative of the efficient photoinduced electron transfer from the PDOCPV to the P.     

阳极氧化与超临界干燥结合制备多孔硅

多孔硅（PS）在室温下发射强可见光，这一发现在国际上引起极大关注，成为材料科学、半导体物理和化学以及信息科学领域研究的热点［1，2］．最近三、四年，国内外对PS制备工艺、影响PS发光的因素、PS发光机制、PS应用前景等方面进行了广泛的研究［2］，但有一些基本问题仍待解决，如关于PS发光机制尚存在分歧；PS电致发光效率低，离应用差距甚远；高多孔度PS微孔结构不稳定等．PS微孔内溶剂蒸发过程中，由于毛细管张力的存在，造成微孔骨架受力不匀．强的应力使PS骨架脆弱，甚至微孔结构坍缩，从而导致PS结构不稳定．对于高多孔度…     

方波脉冲电沉积氧化锌薄膜的研究

以0.1mol·dm-3的Zn(NO3)2水溶液为电解质溶液,以99.9%Zn片作阳极,采用方波脉冲电流法在氧化锡铟(ITO)导电玻璃基底上阴极电沉积,得到了透明的ZnO薄膜.采用X射线衍射分析、扫描电镜和荧光光谱技术,测试了薄膜的结构、表面形貌和光学特性.用同样方法在多孔硅衬底上电沉积ZnO薄膜,经过1000℃氧气氛下热处理1h,在紫外光照射下可发射强绿色荧光.     

PbTiO_3纳米线的合成及其光致发光特性研究

采用水热合成技术,以钛酸四丁酯和三水醋酸铅为原料,NaOH为矿化剂,合成了直径约12nm的钙钛矿结构钛酸铅纳米线.通过X射线衍射,扫描电子显微镜,X射线光电子能谱等技术对纳米线的形貌和成分进行了表征并研究了PbTi O3纳米线的光致发光特性.     

Zn_2SiO_4:Mn纳米微晶薄膜的溶胶-凝胶法制备及其光致发光性质研究

以硝酸锌，硝酸锰，正硅酸乙酯，无水乙醇为主要原料，用溶胶－凝胶提拉法制备了Ｚｎ２ＳｉＯ４：Ｍｎ薄膜．并利用ＸＲＤ、ＳＥＭ、荧光分光光度计和多频荧光寿命仪等对薄膜进行了分析．结果表明，采用上述先驱物通过溶胶－凝胶过程可获得均匀致密的薄膜．在空气中干燥后于适当温度下热处理可得到纳米微晶Ｚｎ２ＳｉＯ４：Ｍｎ薄膜．其荧光寿命从常规粉末材料的的ｍｓ量级缩短至ｎｓ量级     

脉冲电阳极腐蚀纳米多孔硅的蓝光发射

用直流叠加方波脉冲电流阳极腐蚀法制得了多孔硅（ＰＳ），样品经ＸｅＣｌ准分子激光器的３０８ｎｍ激光的激发，获得了中心波长为４６２ｎｍ，半高宽为１２６ｎｍ的蓝色光致发光（ＰＬ）谱、ＰＳ断透射电（ＴＥＭ）分析发现有ｎｍ量级的Ｓｉ原子团组成的一维量子线（柱）阵列的三维量子海棉结构，由此带来的量子约束和表面效应恰好说明了ＰＬ谱的实验结果。     

Zn2SiO4：Mn纳米微晶薄膜的溶胶—凝胶法制备及其光致…

以硝酸锌，硝酸锰，正硅酸乙酯，无水乙醇为主要原料，用溶胶－凝胶提拉法制备了Ｚｎ２ＳｉＯ４：Ｍｎ薄膜，并利用ＸＲＤ，ＳＥＭ，荧光分光光度计和多频荧光寿命仪等对薄膜进行了分析。结果表明，采用上述先驱动通过溶胶－凝胶过程可获得的均匀致密的薄膜。