基于自适应核学习相关向量机的乳腺X线图像微钙化点簇处理方法研究

采用自适应核学习相关向量机方法, 结合形态学滤波和Kallergi分簇标准, 研究了乳腺X线图像中微钙化点簇的处理. 首先将微钙化点检测看作一个监督学习问题, 然后应用自适应核学习相关向量机作为分类器判断图像中每一个位置是否为微钙化点并采用形态学处理滤除干扰噪声, 最后对获得的微钙化点采用Kallergi标准进行分簇. 为提高运算速度, 在微钙化点检测时将整个图像分解为多个子图像并行运算, 实现了一种基于自适应核学习相关向量机的微钙化点簇快速处理方法. 实验结果和分析表明, 自适应核学习相关向量机方法算法性能优于相关向量机方法, 特别是实现的快速方法能进一步降低微钙化点簇的处理时间. 关键词： 乳腺X线图像 微钙化点簇 相关向量机 自适应核学习     

高能闪光照相对电子束参数的要求

对高能闪光机光源性能用Monte-Carlo方法模拟研究发现：并非击靶电子束半径越小、发射度越低, 闪光机的照相性能就会越好. 研究结果表明：为了使闪光照相图像视面上照射量分布比较均匀, 对束半径与电子束归一发射度有一个联合限制, 对于20MeV闪光机, 如果击靶电子束有效半径是0.12cm, 那么仅当束归一发射度≥550cm.mrad时,在2°内的照射量不均匀性才小于5%.     

蒙特卡罗模拟分析电子束发射度对照射量空间分布影响

加速器靶前正前方1 m处的照射量是衡量加速器光源辐射能力的重要物理参量。电子束轰击高原子序数靶产生的X射线空间分布具有很强的前冲性,照射量空间分布与电子束的发射度密切相关。采用高斯函数对不同电子束发射度条件下入射电子的空间分布和角度分布进行建模。应用蒙特卡罗方法对电子束打靶的轫致辐射过程进行模拟,分析电子束发射度对照射量的影响。同时还对整靶结构和叠靶结构下的轫致辐射光源照射量进行计算比较。结果表明,电子束的发散角是影响轫致辐射光源照射量的主要因素。与采用整靶结构相比,采用叠靶结构所获得的照射量空间分布基本一致,在正前方小角度范围内（0~4）的照射量有2%~3%的降低。     

Angular distributions of CH3I fragment ions under the irradiation of a single pulse and trains of ultrashort laser pulses

The angular distribution of CH3I is investigated experimentally using a single Fourier transform-limited laser pulse and a pulse train, where a 90-fs 800-nm linearly polarized laser field with a moderate intensity of 2.8×1013 W/cm2 is used. The dynamic alignment is demonstrated in a single pulse experiment. Moreover, a pulse train is used to optimize the molecular alignment, and the alignment degree is almost identical to that with the single pulse. The results are analysed by using chirped femtosecond laser pulses, and it demonstrates that the structure of pulse train rather than its effective duration is crucial to the molecular alignment.     

An optical study of the D-D neutron irradiation-induced defects in Co-and Cu-doped ZnO wafers

Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped(1×1014,5×1016,and 1×1017cm-2) and Cu-doped(5×1016cm-2) ZnO wafers irradiated by D-D neutrons(fluence of 2.9×1010 cm-2) have been investigated.After irradiation,the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved,and the wu¨rtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation.The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter(E0) is far greater for doped ZnO than the undoped one.Under the same doping concentration,the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one.Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one.In addition,both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers.Consequently,the Co-or Cu-doped ZnO wafer(especially with a high doping level) exhibits very low radiation hardness compared with the undoped one,and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.     

Preliminary results for the design,fabrication,and performance of a backside-illuminated avalanche drift detector

The detection of low-level light is a key technology in various experimental scientific studies. As a photon detector, the silicon photomultiplier （SiPM） has gradually become an alternative to the photomultiplier tube （PMT） in many applications in high-energy physics, astroparticle physics, and medical imaging because of its high photon detection efficiency （PDE）, good resolution for single-photon detection, insensitivity to magnetic field, low operating voltage, compactness, and low cost. However, primarily because of the geometric fill factor, the PDE of most SiPMs is not very high; in particular, for those SiPMs with a high density of micro cells, the effective area is small, and the bandwidth of the light response is narrow. As a building block of the SiPM, the concept of the backside-illuminated avalanche drift detector （ADD） was first proposed by the Max Planck Institute of Germany eight years ago; the ADD is promising to have high PDE over the full energy range of optical photons, even ultraviolet light and X-ray light, and because the avalanche multiplication region is very small, the ADD is beneficial for the fabrication of large-area SiPMs. However, because of difficulties in design and fabrication, no significant progress had been made, and the concept had not yet been verified. In this paper, preliminary results in the design, fabrication, and performance of a backside-illuminated ADD are reported; the difficulties in and limitations to the backside-illuminated ADD are analyzed.     

Field-induced insulator-metal-insulator transitions in low-energy H2- ion-irradiated epitaxial La2/3Cal/3MnO3 thin films

Epitaxial La2/3Cal/3MnO3 thin films grown on LaA103 （001） substrates were irradiated with low-energy 120-keV H＋ ions over doses ranging from 1012 ions/cm2 to 1017 ions/cm2. The irradiation suppresses the intrinsic insulator-metal （I-M） transition temperature and increases the resistance by reducing the crystallographic symmetry of the films. No irradiation-induced columnar defects were observed in any of the samples. The specific film irradiated at a critical dose around 8 x 1015 ions/cm2 is in a threshold state of the electric insulator where the I-M transition is absent. In an external field of 4 T or higher, the I-M transition is restored and thus an enormous magnetoresistance is observed, while a negative temperature coefficient resumes as the temperature is reduced further. Magnetic relaxation behavior is confirmed in this and other heavily irradiated samples. The results are interpreted in terms of the displacement of oxygen atoms provoked by ion irradiation and the resulting magnetic glassy state, which can be driven into a phase coexistence of metallic ferromagnetic droplets and the insulating glass matrix in a magnetic field.     

The effects of ^60Co γ-ray irradiation on the DC characteristics of enhancement-mode A1GaN/GaN high-electron-mobility transistors

The effects of ^60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron- mobility transistors （E-mode HEMTs） are investigated. The results show that having been irradiated by^60Co γ-rays at a dose of 3 Mrad （Si）, the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode A1GaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.