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1.
2.
We report a comprehensive analyzes of the Fourier transform infrared (FTIR) absorption and Raman scattering data on the structural and vibrational properties of dilute ternary GaAs1−xNx,[GaP1−xNx] (x<0.03) alloys grown on GaAs [GaP] by metal organic chemical vapor deposition (MOCVD) and solid source molecular beam epitaxy (MBE). By using realistic total energy and lattice dynamical calculations, the origin of experimentally observed N-induced vibrational features are characterized. Useful information is obtained about the structural stability, vibrational frequencies, lattice relaxations and compositional disorder in GaNAs (GaNP) alloys. At lower composition (x<0.015) most of the N atoms occupy the As [P] sublattice {NAs[NP]}—they prefer moving out of their substitutional sites to more energetically favorable locations at higher x. Our results for the N-isotopic shifts of local mode frequencies compare favorably well with the existing FTIR data. 相似文献
3.
Fe2(CO)6(μ-S2) was used as a single source precursor in attempt to produce FeS film via MOCVD. Pyrolysis of Fe2(CO)6(μ-S2) at temperature below 500℃ produced Fe1-xS or Fe7S8 powder as indicated by its powder X-ray spectra. At 750 ℃, polycrystalline FeS powder was obtained. In film deposition, polycrystalline Fe1-xS or Fe7Ss films were obtained on Si(100) and Ag/Si(100) substrates below 500 ℃. SEM micrographs showed the film on Si(100) substrate containing whisker like grains. However, pillar like grains were obtained on Ag/Si(100) substrate.Deposition rates are also different for different substrates as evaluated by the thickness of the films, which were obtained by SEM micrographs of the cross section of the films. At 750℃, similar polycrystalline Fe1-xS or Fe7S8 film was obtained. 相似文献
4.
Semi-empirical molecular orbital calculations were carried out for the compounds (C2H5)3As, (C2H5)3Ga and RAsH2 (R = C2H5, i-C3H7, i-C4H9, and t-C4H9) by using the CNDO/2-U program, and their capability of β-elimination reaction is compared on the basis of the torsion energy to the transition state, electrostatic interactions and orbital overlapping between the central atom and the β-hydrogen, and bond order of the metal-carbon, and carbon-hydrogen bond. In the comparison of (C2H5)3As with (C2H5)3Ga, we found that the β-elimination of (C2H5)3As could hardly be expected to take place in the thermal decomposition. The capability of β-elimination would be smaller in C2H5AsH2 than that in (C2H5)3As. Moreover when the ethyl group is replaced by a t-butyl group in RAsH2, the β-elimination reaction appears to become more difficult and a large possibility for a radical process is suggested. 相似文献
5.
Hiroyasu Sato 《应用有机金属化学》1991,5(4):207-219
This is meant to be a brief overview of the developments of research activities in Japan on organometallic compounds related to their use in electronic and optoelectronic devices. The importance of organometallic compounds in the deposition of metal and semiconductor films for the fabrication of many electronic and opto-electronic devices cannot be exaggerated. Their scope has now extended to thin-film electronic ceramics and high-temperature oxide superconductors. A variety of organometallic compounds have been used as source materials in many types of processing procedures, such as metal–organic chemical vapor deposition (MOCVD), metalorganic vapor-phase epitaxy (MOVPE), metal–organic molecular-beam epitaxy (MOMBE), etc. Deposited materials include silicon, Group III–V and II–VI compound semiconductors, metals, superconducting oxides and other inorganic materials. Organometallic compounds are utilized as such in many electronic and optoelectronic devices; examples are conducting and semiconducting materials, photovoltaic, photochromic, electrochromic and nonlinear optical materials. This review consists of two parts: (I) research related to the fabrication of semiconductor, metal and inorganic materials; and (II) research related to the direct use of organometallic materials and basic fundamental research. 相似文献
6.
Nishant Peddagopu Anna L. Pellegrino Carmela Bonaccorso Patrizia Rossi Paola Paoli Graziella Malandrino 《Molecules (Basel, Switzerland)》2022,27(19)
Very few sodium complexes are available as precursors for the syntheses of sodium-based nanostructured materials. Herein, the diglyme, triglyme, and tetraglyme (CH3O(CH2CH2O)nCH3, n = 2–4) adducts of sodium hexafluoroacetylacetonate were synthesized in a single-step reaction and characterized by IR spectroscopy, 1H, and 13C NMR. Single-crystal X-ray diffraction studies provide evidence of the formation of the ionic oligomeric structure [Na4(hfa)6]2−•2[Na(diglyme2]+ when the diglyme is coordinated, while a mononuclear seven-coordinated complex Na(hfa)•tetraglyme is formed with the tetraglyme. Reaction with the monoglyme (CH3OCH2CH2OCH3) does not occur, and the unadducted polymeric structure [Na(hfa)]n forms, while the triglyme gives rise to a liquid adduct, Na(hfa)•triglyme•H2O. Thermal analysis data reveal great potentialities for their applications as precursors in metalorganic chemical vapor deposition (MOCVD) and sol-gel processes. As a proof-of-concept, the Na(hfa)•tetraglyme adduct was successfully applied to both the low-pressure MOCVD and the sol-gel/spin-coating synthesis of NaF films. 相似文献
7.
在MOCVD设备中采用改进的射频辅助生长装置,通过裂解N2及N-Al共掺杂的方法进行ZnO的p型掺杂研究。通过二次离子质谱(SIMS)、X射线衍射(XRD)、原子力显微镜(AFM)、光致发光(PL)谱等方法分析了薄膜中N杂质的浓度,以及射频功率与晶体质量、表面形貌以及光学特性之间的关系,并与Al掺杂和N掺杂的ZnO薄膜进行对比。实验结果表明,N掺杂的浓度高达1020cm-3;N-Al共掺杂极大地增加了ZnO的成核速率,其主要原因是N离化所起的作用;N-Al共掺的ZnO薄膜显示出p型性质,而N掺杂的ZnO薄膜由于N原子处于非激活状态而呈现高阻,这说明N-Al共掺杂对ZnO中N原子的活化起到一定作用。 相似文献
8.
用MOCVD法制备TiO2薄膜 总被引:4,自引:0,他引:4
用低压MOCVD法,以四异丙纯钛为源物质,高纯氮气作为载气,氧气为反应气体,制备出了TiO2薄膜,考察出了沉积温度,基片距离均对沉积速率有影响,发现在不同反应条件下TiO2薄膜生长行为受动力学控制或受扩散控制。 相似文献
9.
MOCVD 生长的动力学模式探讨 总被引:4,自引:0,他引:4
讨论金属有机化合物气相沉积(MOCVD)方式生长晶体的一种动力学解释.应用分子动力学、化学反应动力学等推导出MOCVD反应过程中晶体生长速度—原材料输运速度有关的公式,并应用这个公式进行了计算,计算结果与实际生长时的参数接近. 相似文献
10.
Xian Tao Ke‐Cheng Shen Qing‐Yun Tang Meng Feng Jiang‐Tao Fang Yu‐Long Wang Ying‐Zhong Shen 《应用有机金属化学》2012,26(7):323-329
New N‐silver(I) acetylbenzamide complexes of type Ln?AgNC9H8O2 (L = PPh3; n = 1, 2a; n = 2, 2b; n = 3, 2c; L = P(OEt)3; n = 1, 2d; n = 2, 2e; n = 3, 2f) were prepared. These complexes were obtained in high yields and characterized by elemental analysis, 1H NMR, 13C{H} NMR, 31P{H} NMR and IR spectroscopy, respectively. The molecular structure of 2b has been determined by X‐ray single‐crystal analysis in which the silver atom is in a distorted tetrahedral geometry and crystallizes as cis–trans. New N‐silver(I) acetylbenzamide complexes have a four‐membered ring, which could influence their chemical and physical properties and modulate volatility. Metal organic chemical vapor deposition experiments were carried out successfully at 400°C and 450°C using 2e as precursor for the deposition of silver films, respectively. The high‐purity silver film obtained at 400°C is dense and homogeneous. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献