基于Parity-Time对称结构极点效应构建光学三极管模型

为了构建光学三极管模型,设计了一个基于半导体磁性材料InSb的PT(parity-time)对称耦合微腔的结构模型。通过结构参数优化,产生了PT对称结构磁场强耦合的极点效应。在极点频率附近,通过改变输入电流信号改变施加在磁性材料上的磁感应强度,实现极点状态下信号的放大输出。这种放大可以是同相,也可以是反相,该设计实现了特殊光学三极管模型。     

《分压式偏置共射放大电路》教学设计

以“模拟电子技术”课程中《分压式偏置共射放大电路》为例,分析教学设计方法。采用“项目引领,任务驱动”教学模式和“小组合作,自主探究”学习模式,并辅以信息化手段配合教学,可以调动学生学习的主动性和积极性。     

孔道关键氨基酸残基对电压门控钾离子通道Kv2.1和Kv2.2离子选择性的调控

哺乳动物电压门控钾离子通道在膜电位维持以及介导神经元和肌肉兴奋性方面发挥了关键性的作用,与多种神经和心血管疾病密切相关.本研究主要运用点突变方法和膜片钳技术探究W366,Y376以及W374,Y384之间的氢键对哺乳动物大鼠Kv2.1和Kv2.2通道结构和功能的影响.实验证明破坏该氢键会导致通道丧失钾离子通透能力,而主要通透钠离子.     

液体变焦透镜简介

 关于电化毛细管作用的研究始于1875年,李普曼(G.Lippmann)在当时用相关理论来解释对浸在电解液中的水银滴表面施加电压时其形状发生变化这种现象。弗洛姆金(A.Froumkine)用同样的原理解释了电解液体表面的净电荷会改变其与金属表面张角的现象,也就是所谓的电湿润过程。最近,一个巧妙的实验更加形象地展示了这种过程,从而将其应用进行了推广,并使用水银液滴对传感器和光学开关进行了测试。     

ZnS∶Zn,Pb蓝粉在低压阴极射线激发下的应用

通过对ZnS∶Zn,Pb蓝色荧光粉进行表面包覆SiO2以改善其稳定性;In2O3材料的适量混合,提高了荧光粉的导电性,降低了它的起辉电压。采用沉淀法制备荧光屏,考察了阳极电压和阳极电流对亮度以及衰减过程的影响,实验结果表明ZnS∶Zn,Pb的性能优于ZnS∶Ag,Cl和ZnS∶Zn,可适用于FED等低压显示器。     

Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.     

Von Neumann Entropy of an Electron in One-Dimensional Determined Potentials

By using the measure of von Neumann entropy, we numerically investigate quantum entanglement of an electron moving in the one-dimensional Harper model and in the one-dimensional slowly varying potential model. The delocalized and localized eigenstates can be distinguished by von Neumann entropy of the individual eigenstates.There are drastic decreases in von Neumann entropy of the individual eigenstates at mobility edges. In the curve of the spectrum averaged von Neumann entropy as a function of potential parameter λ, a sharp transition exists at the metal-insulator transition point λc = 2. It is found that the von Neumann entropy is a good quantity to reflect localization and metal-insulator transition.     

A Compact Magnetically Insulated Line Oscillator with New-Type Beam Dump

We present a compact improved model of the magnetically insulated line oscillator with new-type beam dump and other novel features. In the experiments, high-power microwave of the TM01 mode is generated from the device with a frequency range of 1.73-1.78 GHz and a peak power level of above 2 GW, when the diode voltage is taken in the range 520-540kV, and the diode current is in the range 58-62kA. This confirms the simulation results.     

12kW二极管泵浦激光模块

二极管泵浦固体激光器（DPL）具有寿命长、热负载小、结构紧凑等优点，在工业加工、军事、通讯等领域都得到了广泛的应用。在高光束质量、高平均功率DPL激光器的研究中，目前普遍采用MOPA结构的光路布局——由谐振腔产生出低功率的单横模激光输出，经多路放大后达到满足需求的功率水平。而激光放大模块作为放大光路中的核心部件，其增益分布特性将直接影响到光束放大过程中的波前变化，因此如何在提高激光放大模块储能的同时提高模块增益分布的均匀性，从而减少光路放大过程的波前畸变，对于进一步研制高平均功率、高光束质量的半导体泵浦固体激光器具有非常重要的意义。