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921.
在3G(第3代移动通信系统)中,为了给不同类型的业务提供不同级别的端到端QoS,网络资源必须进行合理分配。QoS和资源分配是密不可分的,而无线资源分配显得尤为重要。文中提出了UMTS的QoS结构,分3部分对空中接口部分的QoS(即无线资源分配策略问题)进行了讨论:首先提出了一种RRA算法,接着讨论了W-CDMA和TD-CDMA系统的无线资源分配问题,最后讨论了下行链路及上行链路的呼叫允许控制(CAC)。 相似文献
922.
提出了一种基于微悬臂梁传感技术研究大分子折叠/构象转变的新方法.通过分子自组装的方法将热敏性的聚N-异丙基丙烯酰胺(PNIPAM)分子链修饰到微悬臂梁的单侧表面,用光杠杆技术检测温度在20—40℃之间变化时由于微悬臂梁上的PNIPAM分子在水中的构象转变所引起的微悬臂梁变形.实验结果显示:在升温过程中,微悬臂梁的表面应力发生了变化并且导致微悬臂梁产生了弯曲变形,这个过程对应着微悬臂梁上的PNIPAM分子从无规线团构象到塌缩小球构象的构象转变.在降温过程中,微悬臂梁发生了反方向的弯曲变形,这对应着PNIPA
关键词:
构象转变
聚N-异丙基丙烯酰胺分子链
表面应力
微悬臂梁 相似文献
923.
A series of complexes formed between halogen-containing molecules and ammonia have been investigated by means of the atoms in molecules (AIM) approach to gain a deeper insight into halogen bonding. The existence of the halogen bond critical points (XBCP) and the values of the electron density (Pb) and Laplacian of electron density (V2pb) at the XBCP reveal the closed-shell interactions in these complexes. Integrated atomic properties such as charge, energy, polarization moment, volume of the halogen bond donor atoms, and the corresponding changes (△) upon complexation have been calculated. The present calculations have demonstrated that the halogen bond represents different AIM properties as compared to the well-documented hydrogen bond. Both the electron density and the Laplacian of electron density at the XBCP have been shown to correlate well with the interaction energy, which indicates that the topological parameters at the XBCP can be treated as a good measure of the halogen bond strength In addition, an excellent linear relationship between the interatomic distance d(X…N) and the logarithm of Pb has been established. 相似文献
924.
采用有限元方法对大型钢结构人行景观天桥进行了静力学、温度应力、动力学模态和初步的抗震能力分析,并就桥自重作用下的最大竖向位移和实际观测结果进行了比较,两者是一致的.计算结果表明:人行景观天桥在常规、温度极值改变和多遇地震荷载作用等多种工况下,现有的设计方案具有足够的强度、刚度和抗震能力. 相似文献
925.
对短程飞行时间法(tim e-of-flight,TOF)中推算冷原子温度的理论拟合公式与近似拟合公式进行了误差分析与比较。研究表明:对于使用短程飞行吸收光谱信号推测冷原子团温度,当探测光光斑半径与冷原子团高斯半径之比k小于0.2时,理论拟合公式和近似拟合公式能很好的相符,随着探测光光斑半径与冷原子团高斯半径比值的逐渐增大,用近似拟合公式所得TOF吸收信号与用理论拟合公式所得TOF吸收信号的误差也将逐渐增大,当比值为0.5时,用近似拟合公式所得TOF吸收信号的误差将增大到20%。 相似文献
926.
S. Joblot Y. Cordier F. Semond S. Chenot P. Venngus O. Tottereau P. Lorenzini J. Massies 《Superlattices and Microstructures》2006,40(4-6):295
We report the realization of an AlGaN/GaN HEMT on silicon (001) substrate with noticeably better transport and electrical characteristics than previously reported. The heterostructure has been grown by molecular beam epitaxy. The 2D electron gas formed at the AlGaN/GaN interface exhibits a sheet carrier density of 8×1012 cm−2 and a Hall mobility of 1800 cm2/V s at room temperature. High electron mobility transistors with a gate length of 4 μm have been processed and DC characteristics have been achieved. A maximum drain current of more than 500 mA/mm and a transconductance gm of 120 mS/mm have been obtained. These results are promising and open the way for making efficient AlGaN/GaN HEMT devices on Si(001). 相似文献
927.
Parking Capacity and Pricing in Park'n Ride Trips: A Continuous Equilibrium Network Design Problem 总被引:2,自引:0,他引:2
In this paper we consider the problem of designing parking facilities for park'n ride trips. We present a new continuous equilibrium network design problem to decide the capacity and fare of these parking lots at a tactical level. We assume that the parking facilities have already been located and other topological decisions have already been taken.The modeling approach proposed is mathematical programming with equilibrium constraints. In the outer optimization problem, a central Authority evaluates the performance of the transport network for each network design decision. In the inner problem a multimodal traffic assignment with combined modes, formulated as a variational inequality problem, generates the share demand for modes of transportation, and for parking facilities as a function of the design variables of the parking lots. The objective is to make optimal parking investment and pricing decisions in order to minimize the total travel cost in a subnetwork of the multimodal transportation system.We present a new development in model formulation based on the use of generalized parking link cost as a design variable.The bilevel model is solved by a simulated annealing algorithm applied to the continuous and non-negative design decision variables. Numerical tests are reported in order to illustrate the use of the model, and the ability of the approach to solve applications of moderate size. 相似文献
928.
LaurieWallace 《世界电信》2002,15(3):51-53
为了构筑第三代无线网络,人们需要对现有基础设施进行彻底改造,包括网络的发射基站。配置在无线基站中的新型数字控制功率放大器能够改善频谱利用率和功率效率,从而提高系统容量。PMC-Sierra公司的数字控制功率放大器采用了数字校正信号处理器(DCSP)以及自适应控制处理器和补偿估值器(ACPCE),该放大器可改善无线基础设施的可靠性,同时降低系统成本、规模及复杂性。 相似文献
929.
P. Ravirajan S.A. Haque J.R. Durrant D.D.C. Bradley J. Nelson 《Advanced functional materials》2005,15(4):609-618
We report a study of the effects of polymer optoelectronic properties on the performance of photovoltaic devices consisting of nanocrystalline TiO2 and a conjugated polymer. Three different poly(2‐methoxy‐5‐(2′‐ethylhexoxy)‐1,4‐phenylenevinylene) (MEH‐PPV)‐based polymers and a fluorene–bithiophene copolymer are compared. We use photoluminescence quenching, time‐of‐flight mobility measurements, and optical spectroscopy to characterize the exciton‐transport, charge‐transport, and light‐harvesting properties, respectively, of the polymers, and correlate these material properties with photovoltaic‐device performance. We find that photocurrent is primarily limited by the photogeneration rate and by the quality of the interfaces, rather than by hole transport in the polymer. We have also studied the photovoltaic performance of these TiO2/polymer devices as a function of the fabrication route and device design. Including a dip‐coating step before spin‐coating the polymer leads to excellent polymer penetration into highly structured TiO2 networks, as was confirmed through transient optical measurements of the photoinduced charge‐transfer yield and recombination kinetics. Device performance is further improved for all material combinations studied, by introducing a layer of poly(ethylene dioxythiophene) (PEDOT) doped with poly(styrene sulfonic acid) (PSS) under the top contact. Optimized devices incorporating the additional dip‐coated and PEDOT:PSS layers produced a short‐circuit current density of about 1 mA cm–2, a fill factor of 0.50, and an open‐circuit voltage of 0.86 V under simulated AM 1.5 illumination (100 mW cm–2, 1 sun). The corresponding power conversion efficiency under 1 sun was ≥ 0.4 %. 相似文献
930.