Deconvolution of very low primary energy SIMS depth profiles

In this paper, the deconvolution of SIMS profiles analysed at very low primary energy (0.5 keV/O₂⁺) is addressed. The depth resolution function (DRF) of the SIMS analysis in presence of roughness is established and a deconvolution procedure is implemented without or in presence of roughness on samples containing delta-doped layers of boron in silicon. It is shown that the deconvolution procedure can lead to a great improvement of the full width at half maximum (FWHM) of the measured peaks in the case where no roughness in detected in the crater bottom. In the case where it is present, the conditions required to use a deconvolution procedure are discussed, and the deconvolution is implemented using precise and restrictive assumptions.     

Fourth-order problems with fully nonlinear boundary conditions

Differential inequality method, bounding function method and topological degree are applied to obtain the existence criterions of at least one solution for the general fourth-order differential equations under nonlinear boundary conditions, and many existing results are complemented.     

The Hadamard Theorem and Borel–Carathéodory Theorem on Riemann Surfaces

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一类广义Bent型S-Box的构造

S-box是密码理论与实践中十分重要的一种装置 ,它的密码性能由其分量函数所决定 .于是 ,选择适当的分量函数来构造 S-box就成了一个重要的研究课题 .在一定意义上 ,Bent函数是最优良的密码函数 .本文通过函数序列半群和置换群来构造其任何非零线性组合为 Bent函数与线性函数之和的函数组 ,从而可由 Bent函数构造出具有高度非线性度和其他良好性状的 S-box     

M.Riesz定理的注记

设u(z)是单位圆内的实值调和函数 ,若 p_平均Mp(r ,u) =12π∫2π0｜u(reiθ) ｜pdθ1 p <∞ ,则称u(z) ∈hp( 1

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