Optical investigation of cavitation erosion by laser-induced bubble collapse

By means of a new force sensor based on optical beam deflection (OBD), the mechanical effects of laser-matter interaction underwater at different incident laser energy are investigated in detail. The experimental results show that a target underwater is impacted in turn by laser-plasma ablation force and high-speed liquid-jet impulse induced by bubbles collapse in the vicinity of a solid boundary. Furthermore, the amplitudes of the two forces increase monotonously with laser energy. According to the ablation force detected by the experiment and the theoretical relationship between laser intensity and ablation pressure, the value of liquid-jet impact against a solid boundary can be easily obtained. In addition, based on the model of a collapsing bubble, some characteristic parameters, such as the liquid-jet impact velocity, the maximum bubble radius, the bubble energy can also be obtained at different laser energy, which are valuable in the corresponding research fields.     

Reduction of dislocation density and improvement of optical quality in ZnO layers by MgO-buffer annealing

Optical properties of ZnO thin films with/without MgO-buffer annealing were investigated by low and room temperature photoluminescence measurements. The ZnO films were grown on c-sapphire substrates by plasma-assisted molecular-beam epitaxy employing a thin MgO-buffer layer. Dislocation density of ZnO layer was reduced from 5.3 × 10⁹ to 1.9 × 10⁹ cm⁻² by annealing MgO-buffer prior to the growth of ZnO. The intensity of free exciton emission from the sample with MgO-buffer annealing was almost twice of that from the sample without annealing, while the deep level emission from the sample with MgO-buffer annealing was about 1/3 of that without annealing. The MgO-buffer annealing improves optical quality of overgrown ZnO films.     

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga⁺ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.     

The First Results of Supersonic Molecular Beam Injection in the HL-2A Tokamak

HL-2A tokamak, the first tokamak with divertor in China, has been constructed and put into operation in 2002. The main parameters are R=1.65 m, a=0.4 m, BT=2.8 T, Ip = 0. 48 MA. The divertor of HL-2A is unique, because it is characterized with a large closed divertor chamber. The device has double divertor chamber, but now it is operating with lower single null configuration to study the physics of divertor for the next step design of a divertor. Supersonic molecular beam injection （SMBI） system with LN2 cooling trap was first installed and demonstrated on the HL-2A tokamak in 2004. The first results of SMBI into HL-2A plasma are to demonstrate the function of the HL-2A divertor and to observe the cold pulse propagation during multi-pulse SMBI on HL-2A Tokamak.     

暗中空光束角动量与中性原子的相互作用及其应用

综述了暗中空光束自旋与轨道角动量的一些性质及其与中性原子之间的相互作用,并简单介绍了暗中空光束及其角动量在原子光学和玻色_爱因斯坦凝聚(BEC)以及各种原子光学器件研制方面的应用.     

SHI induced modification in CR-39 polycarbonate by positron annihilation lifetime studies

CR-39 is a polycarbonate widely used as SSNTD for recording nuclear charged particles and in other applications. Latent ion tracks produced in the polymers due to the damage produced by the passage of Swift Heavy Ions contain amorphous material with highest degree of disorder, changing the free volume properties which have strong correlation with the macroscopic properties of the material. Positron annihilation lifetime spectroscopy (PALS) provides direct information about the dimension, content and hole size distribution of free volume in polymers. The effect of irradiation of ⁴⁰Ar (14.9 MeV/n) ions on CR-39 polycarbonate by Positron Annihilation Lifetime Spectroscopy (PALS) is reported here. PALS provides a non-destructive and non-interfering probe, having high detection efficiency for free volume hole properties. From o-Ps lifetime mean free volume hole radius and average free volume of the micro-voids have been calculated. PAL measurement shows an increase in free volume on irradiation.     

应用无衍射贝塞尔光束的固体线膨胀系数测量系统

测量固体线膨胀系数是工程设计中的一项重要工作。这套非接触固体线膨胀系数测量系统利用激光三角法进行了设计。通过采用线阵CCD作为信号传感器来实现自动化测量。通过采用无衍射贝塞尔光束来提高测量精度和增大测量范围。     

基于积分方法的二维平行剪切层声远场预测

本文采用二维Ffowcs Williams＆Hawkings(FW-H)方程对平行剪切层远声场辐射特性进行了研究。近流场时间精确数据通过计算气动声学(Computational Aeroacoustics,CAA)技术数值模拟获得,声远场信息则通过FW-H方程对近流场内的可穿透积分面进行积分获得。该方法首先采用具有解析解的涡/尾缘干涉问题进行了校核,进一步采用CAA/FW-H匹配技术对二维平行剪切层声辐射问题进行了预测,计算结果表明,积分解与计算域内的CAA数值解吻合较好。     

二维轴对称折迭－组合腔CO2激光器失调时的输出光束的近场分析

给出平凹谐振腔和凹平凹谐振腔失调时光轴确定方法。在二维轴对称折迭－组合腔 激光器小角度失调运行时，对非相干并和和相干并和后的输出光束的近场强度分布做了分析和模拟。结果表明：小角度失调对4cm以内的近场影响不大，光强分布仍具有高斯状分布；对4cm以外的近场影响较大，光强分布发生相应的形变，且随着失调角度变大而变大。     

Tilted superlattice composition profile determined by photoluminescence and thermal disordering

The composition profile of an (AlAs)_1/2(GaAs)_1/2 tilted superlattice is characterized for the first time. The tilted superlattice sample is thermally disordered, and the energy of the direct band gap photoluminescence peak is measured as a function of increasing layer interdiffusion. The shift in the photoluminescence peak energy after completely disordering the tilted superlattice is 39 meV. A theoretical model is used to simulate the change in band gap as a function of layer interdiffusion for several composition profiles. The profile that gives the best fit to the experimental data is chosen. The tilted superlattice composition profile is found to be sinusoidal, varying from Al_0.40Ga_0.60As to Al_0.60Ga_0.40As.