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141.
本文导出了考虑外场和束流效应后束流均方根发射度平方变化方程的一般表达式,并就仅考虑外场,仅考虑空间电荷场和仅考虑尾场等三种特殊情况进行了分析。 相似文献
142.
M. Froese C. Champagne J. R. Crespo López-Urrutia S. Epp G. Gwinner A. Lapierre J. Pfister G. Sikler J. Ullrich J. Dilling 《Hyperfine Interactions》2006,173(1-3):85-92
The precision of atomic mass measurements in a Penning trap is directly proportional to the charge state q of the ion and,
hence, can be increased by using highly charged ions (HCI). For this reason, charge breeding with an electron beam ion trap
(EBIT) is employed at TRIUMF’s Ion Trap for Atomic and Nuclear science (TITAN) on-line facility in Vancouver, Canada. By bombarding
the injected and trapped singly charged ions with an intense beam of electrons, the charge state of the ions is rapidly increased
inside the EBIT. To be compatible with the on-line requirements of short-lived isotopes, very high electron beam current densities
are needed. The TITAN EBIT includes a 6 Tesla superconducting magnet and is designed to have electron beam currents and energies
of up to 5 A and 60 keV, respectively. Once operational at full capacity, most species can be bred into a He-like configuration
within tens of ms. Subsequently, the HCI are extracted, pass a Wien filter to reduce isobaric contamination, are cooled, and
injected into a precision Penning trap for mass measurement. We will present the first results and current status of the TITAN
EBIT, which has recently been moved to TRIUMF after assembly and commissioning at the Max-Planck-Institute (MPI) for Nuclear
Physics in Heidelberg, Germany. 相似文献
143.
S. Sarkar A. D. Thakur C. V. Tomy G. Balakrishnan D. McK Paul S. Ramakrishnan A. K. Grover 《Pramana》2006,66(1):193-207
New experimental data are presented on the scan rate dependence of the magnetization hysteresis width ΔM(H) (∞ critical current densityJ
c(H)) in isothermalMH scans in a weakly pinned single crystal of Ca3Rh4Sn13, which displays second magnetization peak (SMP) anomaly as distinct from the peak effect (PE). We observe an interesting
modulation in the field dependence of a parameter which purports to measure the dynamical annealing of the disordered bundles
of vortices injected through the sample edges towards the destined equilibrium vortex state at a givenH. These data, in conjunction with the earlier observations made while studying the thermomagnetic history dependence inJ
c(H) in the tracing of the minor hysteresis loops, imply that the partially disordered state heals towards the more ordered state
between the peak field of the SMP anomaly and the onset field of the PE. The vortex phase diagram in the given crystal of
Ca3Rh4Sn13 has been updated in the context of the notion of the phase coexistence of the ordered and disordered regions between the
onset field of the SMP anomaly and the spinodal line located just prior to the irreversibility line. A multi-critical point
and a critical point in the (H,T) region of the Bragg glass phase have been marked in this phase diagram and the observed behavior is discussed in the light
of recent data on multi-critical point in the vortex phase diagram in a single crystal of Nb. 相似文献
144.
本文提出光束轨迹方程的一般解,导出解析解的存在条件,推广了文献[1]的光线传播理论,文中以一特定梯度折射率棒为例,讨论了高斯光束在棒中的传播特性。 相似文献
145.
厄米-双曲余弦-高斯光束的瞄准稳定性 总被引:1,自引:0,他引:1
用失调叠加积分的方法 ,对厄米双曲余弦高斯光束的瞄准稳定性作了研究 ,得到了厄米双曲余弦高斯光束失调因子 ηm2 的精确解析公式和近似解析公式 ,并用数值计算了相对横向偏移和相对角向偏移对失调因子ηm2 的影响以及对精确解析公式和近似解析公式的适用范围作了分析和说明。 相似文献
146.
基于DFT插值的宽带波束形成器设计 总被引:6,自引:0,他引:6
本文提出一种基于DFT插值的宽带波束形成器设计方法。首先推导了具有频率不变波束图的连续线阵的灵敏度函数与离散线列阵加权系数之间的关系;接着给出了基于DFT插值的宽带波束形成器设计的两个步骤:(1)使用窄带波束形成器的设计方法计算在参考频率下基阵的加权系数;(2)根据参考频率下基阵的权系数与其它子带权系数之间的关系,利用DFT插值的方法求出其它子带的加权系数。最后,给出了一个设计实例说明本文方法的有效性。 相似文献
147.
We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers
grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron
annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results
for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects
in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission
measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction
band. 相似文献
148.
F. Goschenhofer J. Gerschütz A. Pfeuffer-Jeschke R. Hellmig C. R. Becker G. Landwehr 《Journal of Electronic Materials》1998,27(6):532-535
N-type Hg1−xCdxTe layers with x values of 0.3 and 0.7 have been grown by molecular beam epitaxy using iodine in the form of CdI2 as a dopant. Carrier concentrations up to 1.1 × 1018 cm−3 have been achieved for x = 0.7 and up to 7.6 × 1017 cm−3 for x=0.3. The best low temperature mobilities are 460 cm2/(Vs) and 1.2 × 105 cm2/(Vs) for x=0.7 and x=0.3, respectively. Using CdI2 as the dopant modulation doped HgTe quantum well structures have been grown. These structures display very pronounced Shubnikov-de
Haas oscillations and quantum Hall plateaus. Electron densities in the 2D electron gas in the HgTe quantum well could be varied
from 1.9 × 1011 cm−2 up to 1.4 × 1012 cm−2 by adjusting the thicknesses of the spacer and doped layer. Typical mobilities of the 2D electron gas are of the order of
5.0 × 104 cm2/(Vs) with the highest value being 7.8 × 104 cm2/(Vs). 相似文献
149.
基于嵌入式计算机和Ethernet的分布式波控系统 总被引:5,自引:2,他引:3
介绍一种基于嵌入式计算机和以太网(Ethernet)的相控阵雷达分布式波控系统。整个波控系统以数个嵌入式计算机为核心,通过以太网与雷达的控制计算机通讯。 相似文献
150.
用600keV的Kr~ 离子轰击Al/Cr双层薄膜样品进行界面原子反应及相互混合的研究。实验样品是在单晶硅上蒸镀约500nm厚的铝膜,相继再蒸上所需厚度的铬膜而制成的。轰击剂量为2.0×10~(15)-2.5×10~(16)Kr~ /cm~2。用2.0MeVa粒子对轰击前后的样品进行了卢瑟福背散射(RBS)分析,发现界面处有明显的原子混合存在;当轰击剂量≥1.0×10~(16)Kr~ /cm~2时,RBS谱出现有明显的坪台,经拟合计算和x射线衍射(XRD)测量证实确有化合物Al_(13)Cr_2存在;还分别得到了原子混合量及混合效率与轰击剂量的关系;最后对界面处的原子混合机制进行了讨论。 相似文献