A One‐Kilobit PQR‐CMOS Smart Pixel Array

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and √T‐dependent thermal red shifts. We observed uniform bottom emissions from a 1‐kb smart pixel chip of a 32×32 InGaAs PQR laser array flip‐chip bonded to a 0.35 µm CMOS‐based PQR laser driver. The PQR‐CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.     

基于虚拟仪器的虚拟实验模块化研究

由于计算机网络技术和微电子技术的迅速发展和普及,基于虚拟仪器的虚拟实验已经从初期的尝试走向更加完善的开发和应用,从一定程度上弥补了传统实体实验的不足。另一方面,在虚拟实验的设计开发和使用过程中,虚拟设备存在着重复开发、重用性差等问题,而模块化虚拟实验单元具有标准化、灵活性、用户自主性等特点,为这一问题的解决提供了有效的途径,具有良好的发展前景和实际应用价值。     

基于嵌入式计算机和Ethernet的分布式波控系统

介绍一种基于嵌入式计算机和以太网(Ethernet)的相控阵雷达分布式波控系统。整个波控系统以数个嵌入式计算机为核心，通过以太网与雷达的控制计算机通讯。     

准最佳二进阵列偶

本文在最佳二进阵列、准最佳二进阵列和最佳二进阵列偶的基础上,定义了一种新的最佳信号,即准最佳二进阵列偶.讨论了准最佳二进阵列偶的体积、变换性质,并对其进行了Fourier频谱分析,得到了部分有益的结果.还用计算机穷举搜索出了体积从2~24的准最佳二进阵列偶.     

一项从CAA到CAD的工作 ～正交优化法与SPICE相结合

电子电路的计算机辅助设计方法是促进电子技术发展的一种有效工具。本文介绍如何将行之有效的正交优化法与国际盛行的模拟电子电路的分析程序ＳＰＩＣＥ相结合，形成了ＡＣＯＤ软件，将ＣＡＡ扩展为ＣＡＤ。     

自成像列阵共振腔的分析——Ⅰ.Talbot共振腔

利用自成像效应进行半导体列阵激光器锁相是一种重要的外腔锁相技术,所构成的共振腔可分为Talbot腔和带相位补偿板的Lau腔。我们用Fox-Li方法计算了共振模式。本文给出了Talbot腔的计算结果和分析,表明同相和反相模的损耗随腔长变化存在临界点。     

面阵列封装器件的贴装技术

面阵列封装器件在电子产品中的使用率逐年上升，如何实现其高速贴装是影响生产线效率的重要因素。从不同的角度论述了面阵列封装器件实现高速贴装的手段与技术。     

PERIODIC DYADIC GREEN''S FUNCTION FOR FIELD ANALYSIS IN EMC CHAMBER

Herein a novel Dyadic Green's Function (DGF) is presented to calculate the field in ElectroMagnetic Compatibility (EMC) chamber. Due to the difficulty of simulating the whole chamber environment, the analysis combines the DGF formulation and the FEM method, with the latter deals with the reflection from absorbers. With DGF formulation for infinite periodic array structures, this paper investigates electromagnetic field in chamber with truncated arrays. The reflection from the absorber serves as the virtual source contributing to the total field. Hence the whole chamber field calculation can be separated from the work of absorber model set-up. Practically the field homogeneity test and Normal Site Attenuation (NSA) test are carried out to evaluate the chamber performance. Based on the method in this paper, the simulation results agree well with the test, and predict successfully the victim frequency points of the chamber.     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

基于EDA虚拟实验室仿真精确度优化算法的研究

描述了一种减少仿真时所需计算次数的新技术,使得产品的优化可通过参数的变化来实现,并介绍一种改进SA的算法对获得的结果进行优化。