垂直电偶极子在球外侧电磁场的闭合解及验证

给出了理想导体球外侧垂直电偶极子激励电场的闭合解，解决了直接场的级数表达式的不连续性问题.同球外电磁场直接级数求和表达式的计算结果进行了比较.在相同的电磁模型下，利用闭合解对一种近似方法进行了验证：当垂直电偶极子以及场点在球体表面附近并且频率较低时，这两种方法的计算结果非常一致；当垂直电偶极子以及场点不在球体表面附近并且频率较高时，闭合解的计算结果逐渐出现了近似方法未出现的干涉现象.     

垂直腔体面发射激光器等效电路模型在SPICE下的实现

介绍了一个基于速率方程的垂直腔体面发射激光器(VCSEL)的等效电路模型,该模型在电路模拟程序Pspice下得到了实现,其仿真结果与实验数据十分吻合。用C语言编写了一个可以自动生成VCSEL宏模型的网表自动生成器。     

多组元化合物晶体生长过程中的双扩散对流现象

针对多组元化合物晶体的Bridgman生长过程,通过对液相区流场和浓度场的数值模拟,研究生长过程中容器内部双扩散对流与组分分布的情况.首先对比了三段场和梯度场炉壁温度设计情况下液相区的流体双扩散对流以及组分分布情况.在此基础上,针对梯度场炉壁温度条件,分析了不同参数的影响.结果表明:在溶质格拉晓夫数较大时,它的增大能够明显地削弱液相区的流体流动,从而使得界面附近的组分分布也产生变化;此外,拉晶速度的增大也能够使得液相区的双扩散对流受到抑制.     

垂直腔面发射激光器中选择性氧化工艺稳定性研究

选择性氧化工艺已经成为制备高性能垂直腔面发射激光器(VCSEL)的关键技术,氧化后形成的氧化层提供了良好的电限制和折射率导引,但选择性氧化速率是呈线性规律还是抛物线规律仍存在很大的争议.在多种温度条件下,做了环形沟槽和环形分布孔的氧化实验,这是在垂直腔面发射激光器中采用的两种结构.实验结果表明,氧化窗口形状对氧化速率的影响也依赖温度条件,并对这种实验现象给出了定性解释.     

异构网络垂直切换技术

下一代无线网络(Next Generation Wireless Networks,NGWN)将融合多种不同的网络体系结构与无线技术,NGWN的异构性要求向用户提供无缝切换。为此文章引入了异构无线网络垂直切换策略,并深入论述了其中的关键细节——网络发现、切换判决和切换信息交互流程等。     

差异化营销策略研究——以"欧西莱光电子公司"为例

在中国市场上,许多行业都面临同质化的问题.因此,制定一个与众不同的营销策略,形成差异化优势,是值得考虑的发展模式.本文以“欧西莱光电子公司“为例,从产品、客户需求、客户服务和市场策略等方面来讨论差异化营销.     

Curvilinear smoothed particle hydrodynamics

We suggest a new set of equations to employ smoothed particle hydrodynamics (SPH) in a curvilinear space, and we refer to it as curvSPH. In classical SPH, the horizontal and vertical resolution of discretization is supposed to be equal for fluid particles. However, curvSPH makes the horizontal and vertical resolutions independent from each other. This is performed by transformation of physical space into an appropriate computational space with a different scale in horizontal and vertical directions. Solving a problem using SPH in a curvilinear space also provides capability to model curved boundaries as straight lines. In classical SPH, special care is needed to reach a uniform mass distribution along curved boundaries; however, producing uniform mass distribution along a line using curvSPH is straight forward. Different simulations, including simulation of a flip bucket are performed to demonstrate the applicability of the proposed method. Good agreement of results with experimental data and classical SPH confirms the capabilities of curvSPH. Copyright © 2016 John Wiley & Sons, Ltd.     

Finite element simulations of fully non‐linear interaction between vertical cylinders and steep waves. Part 2: numerical results and validation

In Ma, Wu, Eatock Taylor [Finite element simulation of fully non‐linear interaction between vertical cylinders and steep waves. Part 1: methodology and numerical procedure. International Journal for Numerical Methods in Fluids 2001], designated Part 1 hereafter, we have developed the methodology and solution procedure for simulating the three‐dimensional interaction between fixed bodies and steep waves based on a finite element method (FEM). This paper provides extensive numerical results and validation. The effectiveness of the radiation condition is investigated by comparing the results from short and long tanks; the accuracy of the computed data is confirmed through comparison with analytical solutions. The adopted mathematical model is also validated by comparing the obtained numerical results with experimental data. Various test cases, including non‐linear bichromatic and irregular waves and the interactions between waves and one or two cylinders, are analysed. Copyright © 2001 John Wiley & Sons, Ltd.     

高分辨率影像(HRI)亮度信号二维空间频谱分析

主要分析了ＨＲＩ亮度信号的空间频谱特性，并逐步建立其二维频谱的数学模型和二维抽样谱模型。     

屏蔽槽SOI高压器件新结构和耐压机理

提出具有屏蔽槽的SOI高压器件新结构和自适应界面电荷耐压模型.该结构在屏蔽槽内产生跟随漏极电压变化的界面电荷,此电荷使埋层介质的纵向电场增加,同时使顶层硅的纵向电场降低,并对表面电场进行调制,因此屏蔽了高电场对顶层硅的影响.借助二维器件仿真研究器件耐压和电场分布与结构参数的关系.结果表明,该结构使埋氧层的电场从传统的3Es升高到近600V/μm,突破了传统SOI器件埋氧层的耐压值,大大提高了SOI器件的击穿电压.