A new stroboscope for schlieren and photoelastic visualization of ultrasound

Conventional stroboscopes, when used for visualizing the path of ultrasound in a transparent medium, suffer from many problems including too long a flash duration, jitter and inconsistency. To overcome these limitations a new stroboscope has been developed which is based on a light emitting diode driven with very short, very high current pulses.     

Optimization studies of CVD growth of GaAs0.6P0.4

CVD growth conditions, particularly growth temperature and partial pressures of the reactant gases, strongly affect the growth characteristics and properties of GaAs_0.6P_0.4 epitaxial layers grown on GaAs substrates. For LED’s the most important properties of the material are B/J (brightness per unit current density) and surface morphology. This paper presents the results of a systematic study of the effect of temperature and reactant gas partial pressure (at a fixed III/V ratio) on B/J, surface morphology, growth rate, impurity doping and layer composition. Growth conditions which yield the optimum properties for LED’s are determined. The results are interpreted on the basis of kinetic and thermodynamic mechanisms controlling the growth process under various growth conditions. At constant temperature and constant III/V ratio, increasing the partial pressures causes the growth process to change from mass transport limited, where the growth rate increases with increasing partial pressures, to kinetically limited, where the growth rate is independent of partial pressures. Good morphology layers are obtained over a range of partial pressures around the transition from mass transport limited to kinetically limited growth. The B/J peaks at a value of partial pressure in the kinetically limited regime at which good morphology layers are obtained. Although B/J increases with increasing growth rate in the mass transport regime, the maximum B/J occurs in the region where growth rate is independent of partial pressures so that growth rate alone is not sufficient to determine B/J. In contrast to the “parabolic≓ dependence of growth rate on growth temperature, caused by the transition from the mass transport regime to the kinetic regime, the relative incorporation of As, P, and Te varies with temperature in the manner predicted from thermodynamics in both regimes. This behavior is consistent with the growth rate in the kinetic regime being limited by the desorption of chlorine atoms from the growth surface, with the reaction of As, P, and Te with the Ga proceeding thermodynamically at all temperatures.     

Combination of two basic types of synchronization in a coupled semiconductor laser system

Combination of two basic types of synchronization, anticipatory synchronization and lagged synchronization, is investigated numerically between two coupled semiconductor lasers. It is found that lagged synchronization produced by a backward coupling with a suitable delay can combine with the originally hidden anticipatory synchronization and produce a type of synchronization overcoming the original lagged synchronization produced by a forward coupling. We study the combination synchronization phenomenon when the delay of the backward coupling is different from that of the original anticipatory synchronization. Our results suggest that the synchronization combination phenomenon might allow an interpretation of an experimental observation by Sivaprakasam et al. [Phys. Rev. Lett. 87, 154101 (2001)] that the anticipating time is irrespective of the external-cavity round trip time, which to date remains to be understood.     

White Electroluminescence from a Single‐Polymer System with Simultaneous Two‐Color Emission: Polyfluorene Blue Host and Side‐Chain‐Located Orange Dopant

Four single polymers with two kinds of attachment of orange chromophore to blue polymer host for white electroluminescence (EL) were designed. The effect of the side‐chain attachment and main‐chain attachment on the EL efficiencies of the resulting polymers was compared. The side‐chain‐type single polymers are found to exhibit more efficient white EL than that of the main‐chain‐type single polymers. Based on the side‐chain‐type white single polymer with 4‐(4‐alkyloxy‐phenyl)‐7‐(4‐diphenylamino‐phenyl)‐2,1,3‐benzothiadiazoles as the orange‐dopant unit and polyfluorene as the blue polymer host, white EL with simultaneous orange (λ_max = 545 nm) and blue emission (λ_max = 432 nm/460 nm) is realised. A single‐layer device (indium tin oxide/poly(3,4‐ethylenedioxythiophene)/polymer/Ca/Al) made of these polymers emits white light with the Commission Internationale de l'Éclairage coordinates of (0.30,0.40), possesses a turn‐on voltage of 3.5 V, luminous efficiency of 10.66 cd A^–1, power efficiency of 6.68 lm W^–1, and a maximum brightness of 21 240 cd m^–2.     

Poly(3,4‐ethylenedioxythiophene) Derived from Poly(ionic liquid) for the Use as Hole‐Injecting Material in Organic Light‐Emitting Diodes

We report that poly(3,4‐ethylenedioxythiophene) derived from poly(ionic liquid) (PEDOT:PIL) constitutes a unique polymeric hole‐injecting material capable of improving device lifetime in organic light‐emitting diodes (OLEDs). Imidazolium‐based poly(ionic liquid)s were engineered to impart non‐acidic and non‐aqueous properties to PEDOT without compromising any other properties of PEDOT. A fluorescent OLED was fabricated using PEDOT:PIL as a hole‐injection layer and subjected to a performance evaluation test. In comparison with a control device using a conventional PEDOT‐based material, the device with PEDOT:PIL was found to achieve a significant improvement in terms of device lifetime. This improvement was attributed to a lower indium content in the PEDOT:PIL layer, which can be also interpreted as the effective protection characteristics of PEDOT:PIL for indium extraction from the electrodes.

     

Coherence characteristics of light-emitting diodes

We report the measurement of coherence characteristics of light-emitting diodes (LEDs). Experiments were performed using red and green color LEDs directly illuminating the Young's double slit kept in the far-zone. Fourier transform fringe analysis technique was used for the measurement of the visibility of interference fringes from which the modulus of degree of spectral coherence was determined. Low degree of spectral coherence, typically 0.4 for red and 0.2 for green LED with double-slit separation of 400 μm was observed. A variable slit was then kept in front of the LEDs and the double slit was illuminated with the light coming out of the slit. Experiments were performed with various slit sizes and the visibility of the interference fringes was observed. It was found that visibility of the interference fringes changes drastically in presence of variable slit kept in front of LEDs and a high degree of spectral coherence, typically 0.85 for red and 0.8 for green LED with double-slit separation of 400 μm and rectangular slit opening of 500 μm was observed. The experimental results are compared with the theoretical counterparts. Coherence lengths of both the LEDs were also determined and it was obtained 5.8±2 and 24±4 μm for green and red LEDs, respectively.     

Comparison Study of Phenylquinoline-based Iridium(III) Complexes for Solution Processable Phosphorescent Organic Light-Emitting Diodes by PEDOT:PSS and Graphene Oxide as a Hole Transport Layer

Electroluminescent (EL) properties of Ir(III) complex, [(2,4-diphenylquinoli-ne)]₂Iridium picolinic acid N-oxide [(DPQ)₂Ir(pic-N-O)] were investigated using PEDOT:PSS and reduced graphene oxide (rGO) as a hole transport layer for solution processable phosphorescent organic light-emitting diodes (PhOLEDs). High performance solution-processable PhOLED with PEDOT:PSS and (DPQ)₂Ir(pic-N-O) (8 wt%) doped CBP:TPD:PBD (8:56:12) host emission layer were fabricated to give a high luminance efficiency (LE) of 26.9 cd/A, equivelent to an external quantum efficiency (EQE) of 14.2%. The corresponding PhOLED with rGO as a hole transport layer exhibited the maximum brightness and LE of 13540 cd/m² and 16.8 cd/A, respectively. The utilization of the solution processable rGO thin films as the hole transport layer offered the great potential to the fabrication of solution processable PhOLEDs.     

Synthesis and electro‐optical properties of polyfluorene modified with randomly distributed electron‐donor and rotaxane electron‐acceptor structural units in the main chain

Polyfluorene PF?γCD rotaxane copolymer, composed of randomly distributed 9,9‐dioctylfluorene, methyltriphenylamine (electron‐donating) and 9‐dicyanomethylenefluorene complexed with γ‐cyclodextrin (γCD) (electron‐accepting) structural units, has been synthesized by Suzuki cross‐coupling reaction. The chemical structures were proved by FTIR and ¹H NMR spectroscopy. The surface morphology, thermal, optical, electrochemical behavior, and adhesion characteristics of the obtained rotaxane copolymer have been investigated and compared with those of the nonrotaxane counterpart ( PF ). Relatively high fluorescence efficiency, almost identical normalized absorbance maximum in solution and solid‐state of PF?γCD rotaxane copolymer, and a more uniform and smoother surface with lower adhesion forces provides the role of γCD encapsulation on the lower aggregation propensity. PF?γCD and PF copolymers exhibit n‐ and p‐doping processes and blue‐light emission in the film state. The optical and electrochemical band gaps (ΔE_g), as well as the highest occupied molecular orbital/lowest unoccupied molecular orbital positions in an energetic diagram indicate that both copolymers are promising blue‐emitting electroluminescent materials. © 2013 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013     

Degradation effects in polymer light emitting devices due to heat treatment

The characteristics of polymer light emitting diodes (PLEDs) (ITO/PPV/Ca) depend strongly on the conditions during preparation and operation. We studied the effects of heat treatment (during and after preparation) of PLEDs with OC₁C₁₀-PPV as active layer. PLEDs showed a reduction of both the current and the light output to 40 % after annealing for only 30 min at 65 °C. Effects on I-V characteristics were studied by measuring single carrier devices (hole- and electron-dominated devices). The current reduction after heat treatment can be ascribed to degradation of the ITO/PPV and the Ca/PPV interfaces.