用激光调阻法提高线列光导PbS焦平面探测器性能

首次在国内报道了用激光调阻法提高线列1×128光导PbS红外焦平面探测器性能的研究成果.针对PbS探测器芯片的特点,用激光调阻法对采用负载电阻分流型电路的焦平面探测器的背景输出电平进行平坦化研究.实验结果表明,用激光调阻使背景电平平坦化之后,通过优化器件的工作参数,探测器平均黑体响应率由4.45×106V/W提高到8.82×106V/W;平均黑体探测率由6.52×109cm·Hz1/2·W-1提高到1×1010cm·Hz1/2·W-1;动态范围由46 dB提高到52 dB.研究结果为今后的薄膜型焦平面探测器实用化提供了参考.     

沟槽式肖特基用高均匀性硅外延支撑层高速生长工艺研究

作为沟槽式肖特基芯片的关键支撑层,硅外延层的性质对芯片性能构成重要影响。系统探索了新式高速外延生长工艺制备硅外延层的方法。通过干涉显微镜、FT-IR、Hg-CV对硅外延层性质进行表征。研究了高速外延生长条件下的厚度均匀性、电阻率均匀性、表面完整性与外延反应流场、热场的作用规律。研究结果表明,通过基座高度的调制、加热功率的分配、预先基座包硅、本征覆盖层生长等综合手段解决了外延层边缘参数控制问题,并实现了最高6.6μm/min的生长速率。     

两种微型热管传热性能对比研究

以波形脉动热管和微槽平板热管为研究对象,基于Mixture模型构建了其三维非稳态数学模型,并对模型可靠性进行了验证。采用该数学模型对比了两种微型热管在相同散热空间和散热热流密度情况下的热阻、平均壁面温度和蒸发段壁面温度均匀性。结果表明:相对于微槽平板热管,波形脉动热管热阻更低,传热性能更好;波形脉动热管蒸发段稳态平均壁面温度更低,且随着热流密度的增加该优势更加明显;波形脉动热管在空间尺度上蒸发段壁面温度均匀性更好,且这种优势在高热流密度情况下更突出,但这种均匀性在时间尺度上变化相对剧烈。     

基于数值仿真的多馈微波加热温度控制系统

针对常用多模腔加热的不均匀性,对多馈口微波加热进行了研究,提出了一种基于数值仿真分析来设计微波加热系统的方法。通过建立1/2 全尺寸有限元模型进行仿真计算,分析了馈口数量对微波加热的影响,在此基础上采用Bang-Bang 控制策略设计了加热系统。其中,圆柱形谐振腔模型的高度为800 mm,半径为395 mm。腔体周围环形布置10个微波源,通过德拜模型仿真温度变化和测量值进行对比,验证了仿真模型的正确性。不同馈口数的COMSOL仿真结果表明,馈口数为4时,温度变异系数(COV)为0.0897,相比于一个馈口的情况,温度的均匀性提高了10.5%。通过实验测试了微波加热系统性能,实验结果表明,媒质温度能得到合理控制。     

One‐Step Scalable Fabrication of Graphene‐Integrated Micro‐Supercapacitors with Remarkable Flexibility and Exceptional Performance Uniformity

The rapid development of miniature electronics has accelerated the demand for simplified and scalable production of micro‐supercapacitors (MSCs); however, the preparation of active materials, patterning microelectrodes, and subsequent modular integration of the reported MSCs are normally separated and are involved in multiple complex steps. Herein, a one‐step, cost‐effective strategy for fast and scalable fabrication of patterned laser‐induced graphene (LIG) for all‐solid‐state planar integrated MSCs (LIG‐MSCs) with various form factors of designable shape, exceptional flexibility, performance uniformity, superior modularization, and high‐temperature stability is demonstrated. Notably, using the conductive and porous LIG patterns composed of randomly stacked graphene nanosheets simultaneously acting as both microelectrodes and interconnects, the resulting LIG‐MSCs represent typical electrical double capacitive behavior, having an impressive areal capacitance of 0.62 mF cm^?2 and long‐term stability without capacitance degeneration after 10 000 cycles. Furthermore, LIG‐MSCs display exceptional mechanical flexibility and adjustable voltage and capacitance output through arbitrary arrangement of cells connected in series and in parallel, indicative of exceptional performance customization. Moreover, all‐solid‐state LIG‐MSCs working at ionogel electrolyte exhibit highly stable performance even at high temperature of 100 °C, with 90% capacitance retention over 3000 cycles, suggestive of outstanding reliability. Therefore, the LIG‐MSCs offer tremendous opportunities for miniature power source‐integrated microelectronics.     

紫外ICCD面均匀性测试技术研究

以辐射度学为理论基础,研究了紫外ICCD(UV-ICCD)面的响应均匀性测试技术。论述了200～300nm UV-IOED面均匀性的测试方案。使用入射口径为100μm的光谱仪对UV-ICCD靶面处的均匀性进行了测试。测试结果表明,靶面处辐照度场的不均匀性不高于1.6%。在对靶面处的均匀性进行测试的基础上,对UV-ICCD面的均匀性进行了实际测量,并进行了不确定度分析。结果表明,该方案可应用于UV-ICLD光电探测器件的面均匀性测量。     

一种实验用交流超导磁体的研制

该文介绍了用于探测线圈法测量超导材料交流损耗的一种交流超导磁体的设计、加工与绕制。超导磁体设计采用成熟的螺线管磁体技术,磁体骨架为低温环氧树脂加工而成,所用超导线为NbTi/Cu复合超导绞线。为了满足磁体的稳定性,每两层超导线间留出了一条冷却通道。所绕磁体的磁场强度和均匀度都满足设计要求。     

一种新颖的制备聚合物光电薄膜的旋涂装置

设计了一种新颖的制备聚合物光电薄膜的旋涂装置.该设计在传统旋涂装置的基础了,通过增加聚合物溶液载台转盘法向进动功能,改进了聚合物溶液成膜质地疏松、致密度不高问题,减少了成膜过程中产业气泡等缺陷的几率.通过增加聚合物溶液载台转盘径向变轴功能,改善了聚合物薄膜径向厚度的均匀性,从而可以借助于旋涂法制备更大尺寸的薄膜器件.理论和试验结果表明,该项改进设计对提高聚合物光电薄膜的制备质量有一定的实用价值.     

多模光纤产生用于大气光通信的部分相干光源

克服大气湍流对近地大气光通信质量影响,可归结为在接收端的照明均匀化,而采用部分相干光照明则是提高照明均匀性的一种有效途径。提出利用多模光纤的模间色散产生一个具有部分相干光特性的合成光源的方法,分析了该光源的产生原理,表明光束发散角由光纤芯径和发射透镜的焦距决定,由模间色散产生的光程差越大,该合成光源的空间相干性越差。仿真结果表明形成1 mrad远场发散角的合成光源是可行的,因而适于在空间光通信中应用。     

Uniform low defect density molecular beam epitaxial HgCdTe

This paper describes recent advances in MBE HgCdTe technology. A new 3 inch production molecular beam epitaxy (MBE) system, Riber Model 32P, was installed at Rockwell in 1994. The growth technology developed over the years at Rockwell using the Riber 2300 R&D system was transferred to the 32P system in less than six months. This short period of technology transfer attests to our understanding of the MBE HgCdTe growth dynamics and the key growth parameters. Device quality material is being grown routinely in this new system. Further advances have been made to achieve better growth control. One of the biggest challenges in the growth of MBE HgCdTe is the day-to-day control of the substrate surface temperature at nucleation and during growth. This paper describes techniques that have led to growth temperature reproducibility within + - 1°C, and a variation in temperature during substrate rotation within 0.5°C. The rotation of the substrate during growth has improved the uniformity of the grown layers. The measured uniformity data on composition for a typical 3 cm × 3 cm MBE HgCdTe/CdZnTe shows the average and standard deviation values of 0.229 and 0.0006, respectively. Similarly, the average and standard deviation for the layer thickness are 7.5 and 0.06 μm, respectively. P-on-n LWIR test structure photodiodes fabricated using material grown by the new system and using rotation during growth have resulted in high-performance (R₀)A, quantum efficiency) devices at 77 and 40K. In addition, 128 × 28 focal plane arrays with excellent performance and operability have been demonstrated.