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Abolfazl Azari 《International Journal of Electronics》2013,100(2):295-303
The paper focuses on the peculiar dynamic behaviour of the recently developed 8 mm2 TO-220-packaged, high-voltage, double-interdigitated (or rwo interdigi-tation levels—TIL) GTO thyristor. This novel power device was rated under both slightly and heavily inductive resistive loads, i.e. close to the real conditions encountered in practical power circuits employing GTO thyristors. Emphasis is laid on the ability of TIL GTOs to switch safely, with minimum power losses, a certain amount of anode current under high-voltage conditions and high commutation frequencies. The merits of TIL GTO thyristors are analysed in terms of their reliability and switching efficiency, which include the total power losses (conduction and switching losses), turn-on and turn-off gains and the switching speed. It is shown that thanks to their built-in self-protective features, these novel GTOs possess an enhanced current-handling capability at commutation frequencies up to 50kHz under extremely tough load conditions. The main implications of the results for power applications are outlined. 相似文献
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Jun-Da Chen 《International Journal of Electronics》2013,100(8):1055-1073
This article presents a wideband mixer using a TSMC 0.18?µm complementary metal-oxide semiconductor technology process for ultra-wideband (UWB) system applications. The measured 3-dB radio frequency (RF) bandwidth is from 3 to 8.4?GHz with an intermediate frequency of 10?MHz. The measurement results of the proposed mixer achieve 8.1?dB average power conversion gain ?5?dBm input third-order intercept point (IIP3) at 7.4?GHz and 12.4–13.3?dB double side band noise figure. The total dc power consumption of this mixer including output buffers is 3.18?mW from a 1?V supply voltage. The output current buffer consumption is about 2.26?mW with an excellent local oscillator-RF isolation of up to 40?dB at 5?GHz. The article presents a mixer topology that is greatly suitable for low-power operation in UWB system applications. 相似文献
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The circuit designs are based on TSMC 0.18 μm CMOS standard technology model. The designed circuit uses transformer coupling technology in order to decrease chip area and increase the Q value. The switched-capacitor topology array enables the voltage-controlled oscillator (VCO) to be tuned between 6.66 and 9.36 GHz with 4.9 mW power consumption at supply voltage of 0.7 V, and the tuning range of the circuit can reach 33.7%. The measured phase noise is ?110.5 dBc/Hz at 1 MHz offset from the carrier frequency of 7.113 GHz. The output power level is about ?1.22 dBm. The figure-of-merit and figure-of-merit-with-tuning range of the VCO are about ?180.7 and ?191.25 dBc/Hz, respectively. The chip area is 0.429 mm2 excluding the pads. The presented ultra-wideband VCO leads to a better performance in terms of power consumption, tuning range, chip size and output power level for low supply voltage. 相似文献
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设计了一款基于共面波导馈电的小型化具有双陷波特性的超宽带天线,该天线的带宽在3~14 GHz内,电压驻波比(VSWR)小于2。在辐射贴片上通过开L型和半圆环缝隙实现了在3.3~3.7 GHz和5.150~5.825 GHz的双频段的陷波特性,抑制了802.16无线城域网和无线局域网对超宽带系统的干扰,在整个工作频段具有稳定的增益和良好的全向性。通过对天线模型进行加工制作并测量,测试结果表明:天线的带宽是3~14 GHz,在3.3~3.7 GHz和5.15~5.825 GHz频段内VSWR大于4,实现了天线的双陷波特性。该天线尺寸小、结构紧凑的特点,适合现代的无线通信系统。 相似文献
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基于等阻抗-双脉冲成形线技术,建立了一个超宽带高能高功率微波发生器理论模型。计算机模拟结果表明:利用等阻抗超宽带高功率微波发生器,可以同时产生纳秒主脉冲和皮秒前沿脉冲;通过控制皮秒脉冲成形线输出开关闭合的延迟时间,可以调制皮秒脉冲和纳秒脉冲的输出电压比值;通过调节纳秒脉冲成形线与皮秒脉冲成形线的电容比值,可以控制皮秒脉冲的脉宽和皮秒脉冲的峰值电压;利用等阻抗超宽带高功率微波发生器,可以最大限度地提高辐射脉冲能量和整个系统的能量转换效率。 相似文献
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正A radio frequency(RF) receiver frontend for single-carrier ultra-wideband(SC-UWB) is presented. The front end employs direct-conversion architecture,and consists of a differential low noise amplifier(LNA),a quadrature mixer,and two intermediate frequency(IF) amplifiers.The proposed LNA employs source inductively degenerated topology.First,the expression of input impedance matching bandwidth in terms of gate-source capacitance, resonant frequency and target S_(11) is given.Then,a noise figure optimization strategy under gain and power constraints is proposed,with consideration of the integrated gate inductor,the bond-wire inductance,and its variation.The LNA utilizes two stages with different resonant frequencies to acquire flat gain over the 7.1-8.1 GHz frequency band,and has two gain modes to obtain a higher receiver dynamic range.The mixer uses a double balanced Gilbert structure.The front end is fabricated in a TSMC 0.18-/im RF CMOS process and occupies an area of 1.43 mm~2.In high and low gain modes,the measured maximum conversion gain are 42 dB and 22 dB,input 1 dB compression points are -40 dBm and -20 dBm,and S_(11) is better than -18 dB and -14.5 dB.The 3 dB IF bandwidth is more than 500 MHz.The double sideband noise figure is 4.7 dB in high gain mode.The total power consumption is 65 mW from a 1.8 V supply. 相似文献
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针对超宽带频带内授权信号类型确定的特点,为了弥补盒维数检测不能够有效识别信号类型的缺点,提出通过进一步提取信息维数特征对信号调制样式进行识别,该方法融合了盒维数检测和信息维数检测的优点进行合作判决。仿真表明基于信号分形理论的频谱感知能够取得较好的检测效果,且该方法运算复杂度低,对噪声不敏感,能够有效区别噪声与授权信号,抵御模拟授权用户攻击,检测效果优于循环谱检测和能量检测。 相似文献